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08/21/06
DIGITAL AUDIO MOSFET
IRFI4212H-117P
Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low RDS(ON) for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 150W per channel into
4Ω load in half-bridge configuration
amplifier
Lead-free package
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings g
Parameter Units
VDS Drain-to-Source Voltage V
VGS Gate-to-Source Voltage
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current c
PD @TC = 25°C Power Dissipation fW
PD @TC = 100°C Power Dissipation f
Linear Derating Factor W/°C
EAS Single Pulse Avalanche EnergydmJ
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance g
Parameter Typ. Max. Units
RθJC Junction-to-Case f––– 7.1 °C/W
RθJA Junction-to-Ambient (free air) ––– 65
18
7.0
0.14
10lbxin (1.1Nxm)
-55 to + 150
300
41
Max.
6.8
44
±20
100
11
VDS 100 V
RDS(ON) typ. @ 10V 58 m:
Qg typ. 12 nC
Qsw typ. 6.9 nC
RG(int) typ. 3.4 Ω
TJ max 150 °C
Key Parameters g
G1, G2 D1, D2 S1, S2
Gate Drain Source
TO-220 Full-Pak 5 PIN
PD - 97249A
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IRFI4212H-117P
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.9mH, RG = 25Ω, IAS = 6.6A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
Specifications refer to single MosFET.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆ΒVDSS
/
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 58 72.5 mΩ
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V
∆VGS(th)
/
∆TJGate Threshold Voltage Coefficient ––– -11 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
gfs Forward Transconductance 11 ––– ––– S
QgTotal Gate Charge ––– 12 18
Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.71 ––– nC
Qgd Gate-to-Drain Charge ––– 6.2 –––
Qgodr Gate Charge Overdrive ––– 3.5 ––– See Fig. 6 and 15
Qsw Switch Charge (Qgs2 + Qgd)––– 6.9 –––
RG(int) Internal Gate Resistance ––– 3.4 ––– Ω
td(on) Turn-On Delay Time ––– 4.7 –––
trRise Time ––– 8.3 –––
td(off) Turn-Off Delay Time ––– 9.5 ––– ns
tfFall Time ––– 4.3 –––
Ciss Input Capacitance ––– 490 –––
Coss Output Capacitance ––– 64 ––– pF
Crss Reverse Transfer Capacitance ––– 34 –––
Coss eff. Effective Output Capacitance ––– 110 –––
LDInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from package
Di
o
d
e
Ch
aracter
i
st
i
cs g
Parameter Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current ––– ––– 11
(Body Diode) A
ISM Pulsed Source Current ––– ––– 44
(Body Diode)c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 36 54 ns
Qrr Reverse Recovery Charge ––– 56 84 nC
MOSFET symbol
RG = 2.5Ω
TJ = 25°C, IF = 6.6A
di/dt = 100A/µs e
TJ = 25°C, IS = 6.6A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 6.6A e
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 0V, VDS = 0V to 80V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
ID = 6.6A
VGS = 0V
VDS = 50V, ID = 6.6A
Conditions
and center of die contact
VDD = 50V, VGS = 10Ve
VDS = 80V
VDS = 50V
ID = 6.6A
ƒ = 1.0MHz, See Fig.5
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IRFI4212H-117P
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
≤60µs PULSE WIDTH
Tj = 25°C
6.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
6.0V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
3456789
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 50V
≤60µs PULSE WIDTH
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 2 4 6 8 101214
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 6.6A
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 6.6A
VGS = 10V
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IRFI4212H-117P
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Junction Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
Fig 10. Threshold Voltage vs. Temperature
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th), Gate Threshold Voltage (V)
ID = 250µA
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.7942 0.000208
1.3536 0.001434
2.2345 0.100647
2.7177 1.9398
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
DC
25 50 75 100 125 150
TJ , Junction Temperature (°C)
0
2
4
6
8
10
12
ID, Drain Current (A)
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IRFI4212H-117P
Fig 13a. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 13c. Unclamped Inductive Waveforms
Fig 13b. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
VDD
VDS
LD
D.U.T
+
-
Fig 15a. Gate Charge Test Circuit Fig 15b Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
1K
VCC
DUT
0
L
45678910 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
50
75
100
125
150
175
200
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 6.6A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
25
50
75
100
125
150
175
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 1.2A
2.1A
BOTTOM 6.6A
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IRFI4212H-117P
TO-220 Full-Pak 5-Pin Part Marking Information
TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))
14
Data and specifications subject to change without notice.
This product has been designed for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/06
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
