Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
73 90
96 125
RθJL 63 75
W
Maximum Junction-to-Lead Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient AD Steady-State °C/W
±8Gate-Source Voltage
Drain-Source Voltage -12
Continuous Drain
Current
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
-5
-60
Pulsed Drain Current C
Power Dissipation B
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.4
0.9
-55 to 150
TA=70°C
ID
-6.5
AO8807L
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -12V
ID = -6.5 A (VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -4.5V)
RDS(ON) < 24mΩ (VGS = -2.5V)
RDS(ON) < 30mΩ (VGS = -1.8V)
ESD Protected!
General Description
The AO8807L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch.
- RoHS Compliant
-Halogen Free
G1
S1
S1
D1
G2
S2
S2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
D2
G1
D1
S1
Rg
G2
D2
S2
Rg
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO8807L
Symbol Min Typ Max Units
BVDSS -12 V
-1
TJ=55°C -5
IGSS ±10
µ
A
VGS(th) -0.35 -0.53 -0.85
ID(ON) -60 A
16 20
TJ=125°C 23 28
19 24 m
Ω
23 30 m
Ω
28 36 m
Ω
gFS 45 S
VSD -0.56 -1 V
IS-1.4 A
Ciss 1740 2100 pF
Coss 334 pF
Crss 200 pF
Rg1.3 1.7 k
Ω
Qg19 23 nC
Qgs 4.5 nC
Qgd 5.3 nC
tD(on) 240 ns
tr580 ns
tD(off) 7
µ
s
tf4.2
µ
s
trr 22 27 ns
Qrr 17 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On Delay Time
DYNAMIC PARAMETERS
Gate resistance VGS=0V, VDS=0V, f=1MHz
IF=-6.5A, dI/dt=100A/µs
VGS=0V, VDS=-6V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-6V, ID=-6.5A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off Delay Time
VGS=-4.5V, VDS=-6V, RL=0.9Ω,
RGEN=3Ω
mΩ
VGS=-2.5V, ID=-6A
IS=-1A,VGS=0V
VDS=-5V, ID=-6.5A
VGS=-1.8V, ID=-5.5A
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-12V, VGS=0V
Zero Gate Voltage Drain Current
VDS=0V, VGS=±8V
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-1.5V, ID=-5A
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-6.5A
Reverse Transfer Capacitance
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev0 : July 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO8807L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
012345
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
-ID (A)
VGS=-1.5V
-2V
-3V
-4.5V -2.5V
0
10
20
30
40
50
60
0 0.5 1 1.5 2 2.5 3
-VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
-ID(A)
10
15
20
25
30
35
40
45
0 2 4 6 8 101214161820
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
RDS(ON) (mΩ)
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
-IS (A)
25°C
125°C
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
Normalized On-Resistance
ID=-6A, VGS=-2.5V
ID=-5.5A, VGS=-1.8V
ID=-5A, VGS=-1.5V
10
15
20
25
30
35
40
45
50
02468
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
RDS(ON) (mΩ)
ID=-6.5A
25°C
125°C
25°C
125°C
VDS=-5V
VGS=-1.5V
VGS=-1.8V
VGS=-4.5V
ID=-6.5A, VGS=-4.5V
VGS=-2.5V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO8807L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 4 8 12 16 20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
400
800
1200
1600
2000
2400
2800
024681012
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
Coss
Crss
0
20
40
60
80
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-t
o
Ambient (Note F)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
ZθJA Normalized Transient
Thermal Resistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
T
o
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
VDS=-6V
ID=-6.5A
TJ(Max)=150°C
TA=25°C
0
0
1
10
100
0.01 0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
T
=25°C
100
µ
1s
10s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO8807L
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
VDC
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
tt
r
d(on)
ton
td(off) tf
toff
-
+
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
trr
-Isd
-Vds
F
-I
-I
Alpha & Omega Semiconductor, Ltd. www.aosmd.com