NOTES : 1.Measured with I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4. 0V DC.
3.Thermal Resistance Junction to Ambient.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
@T
A
=
55 C
@T
J
=100 C
UF1001M thru UF1007M
ULTRA FAST RECTIFIERS
FEATURES
Low cost
Diffused junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
ME CHANICAL DAT A
Case : JEDEC DO -41 m olded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATI NGS AND ELECTRICAL CHA RACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, dera te c u rr e n t by 20%
UF
1003M
200
140
200
UF
1001M
50
35
50
UF
1007M
1000
700
1000
UF
1002M
100
70
100
UF
1006M
800
560
800
UF
1005M
600
420
600
UF
1004M
400
280
400
Maxim um Average Forward
Re ctifie d C urr ent
Peak Forw ard Surge Current
8.3ms si ngle half sine-wave
super imposed on rated load (JEDEC Method)
Maximum R ecu rrent P eak Reverse Volt age
Maximum RMS Voltage
Maxim um DC Blocking Voltage
Maxim um forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
1.0
30
1.0
5
100
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Te m perature Range
-55 to +150 C
Typic al Thermal Resistance (Note 3)
R
0JA
25
C/W
C
J
Typical Junction Ca pacitance (N ot e 2)
20
pF
uA
V
A
A
V
UNIT
V
V
All Dimensions in millimete r
Max.
Mi n.
DO-41
Dim.
A
D
C
B 25.4 5.2 0
-
4.10
0.71
2.0 0 2.70
0.8 6
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
Maximum Reverse Recovery Time (Note 1)
T
RR
1.3 1.7
50 75
10
ns
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDCC01
RATING AND CHARACT ERISTIC CURVES
UF1001M thru UF1007M
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMB ER OF CYCLES AT 60Hz
1 5 10 50 100220
0
10
20
30
40
Pulse width 8.3ms
Single Half-Sine-Wave
(J EDEC METHOD)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FOR WARD CURRENT
AMPERES
25
75 100 125 150
0.6
0 50
0.2
1.0
175
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
AMBIENT TEMPERATURE , C
0.8
0.4
INSTANTANEOUS FOR WARD CURRENT ,(A)
10
IN STANTANEOUS F ORWARD VOLTAGE , VOLTS
FIG.4 - T YPICAL FORWARD CHARACTERISTICS
0.2 0.4 1.2 1.4
0
0.1
1.0
0.6 0.8 1.0
0.01 1.8
1.6
TJ= 25 C
PULSE WIDTH 300us
UF1001M to UF1003M
UF1005M -
UF1007M
UF1 004M
FIG.3 - TYPICAL JUNCTION CAPACITANCE
CA PACITANCE , (p F)
REVER SE VOLTAGE , VOLTS
10
1100
100
10
1.0 4
UF1005M to UF1007M
UF1001M to UF1004M
T
J
= 25 C, f= 1MHz
REV. 2, 01-Dec-2000, KDCC01