Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier MP4TD1170
Features
• High Dynamic Range Cascadable 50Ω/75Ω Gain Block
• 3dB Bandwidth: 50 MHz to 1.0 GHz
• 17.0 dBm Typical P1dB @ 1.0 GHz
• 12 dB Typical Gain @ 0.5 GHz
• 4.0 dB Typical Noise Figure @ 1.0 GHz
• Hermetic Gold-Ceramic Microstrip Package
• Tape and Reel Packaging Available
Description
M-Pulse's MP4TD1170 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package. The MP4TD1170 is designed for use in 50Ω
or 75Ω systems where a high dynamic range and low
distortion gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD1170 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
10
12
14
0.1 1 10
FREQUENCY (GHz)
GAIN (dB)
Id=60mA
Gold-Ceramic Microstrip Package Outline1,2
RF OUT
AND B IAS
RF INPUT
GND
GND
2
31
4
.495 ±.030
12
,
57±0
,
76
.004 ±.002
0,1±0,05
.035
0,89
.070
1,78
.020
0,51
.
040
1,02
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
Pin Configuration
Pin Number Pin Description
1 RF Input
2 & 4 AC/DC Ground
3 RF Output and DC Bias
Ordering Information
Model No. Package
MP4TD1170 Hermetic Ceramic
MP4TD1170T Tape and Reel
Electrical Specifications @ TA = +25°C, Id = 60 mA, Z0 = 50Ω
Symbol Parameters Test Conditions Units Min. Typ. Max.
Gp Power Gain (⏐S21⏐2) f = 0.1 GHz dB 11.5 12.5 13.5
ΔGp Gain Flatness f = 0.1 to 0.7 GHz dB - ±0.9 ±1.1
f3dB 3 dB Bandwidth ref 50 MHz Gain GHz - 1.0 -
SWRin Input SWR f = 0.1 to 2.0 GHz - - 1.8 -
SWRout Output SWR f = 0.1 to 2.0 GHz - - 1.9 -
P1dB Output Power @ 1 dB Gain Compression f = 0.7 GHz dBm 16.0 17.0 -
NF 50 Ω Noise Figure f = 0.7 GHz dB - 4.0 4.5
IP3 Third Order Intercept Point f = 1.0 GHz dBm - 30.0 -
tD Group Delay f = 1.0 GHz ps - 160 -
Vd Device Voltage - V 4.5 5.5 6.5
dV/dT Device Voltage Temperature Coefficient - mV/°C - -8.0 -
SiliconBipolar MMIC Cascadable Amplifier MP4TD1170
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings1
Parameter Absolute Maximum
Device Current 90 mA
Power Dissipation2,3 560 mW
RF Input Power +20 dBm
Junction Temperature 200°C
Storage Temperature -65°C to +200°C
Thermal Resistance: θjc = 135°C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25 °C.
3. Derate at 7.4 mW/°C for Tc > 124°C.
Typical Bias Configuration
IN OUT
1
2
3
4RFC (Optional)
C (DC Block) C (DC Block)
Rbias
V
cc > 7.5
V
Vd = 5.5 V
Id = Vcc - Vd
Rbias
MP4TD1170
Typical Performance Curves @ Id = 60 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
20
40
60
80
100
120
012345678
Vd, DEVICE VO LT AGE (V)
Id, DEVICE CURRENT (mA)
POWER GAIN vs CURRENT
0
2
4
6
8
10
12
14
20 40 60 80 100
Id, DEVICE CURRENT (mA)
GAIN (dB)
0.1 G H z
0.5 GHz
1.0 GHz
2.0 GH z
RETURN LOSS vs FREQUENCY
-20
-18
-16
-14
-12
-10
-8
-6
0.1 1 10
FREQUENCY (GHz)
RETURN LOSS (dB)
INPUT
OUTPUT
POUT @ 1dB GAIN COMPRESSION
vs FREQUENCY
11
13
15
17
19
21
23
0.1 1 10
FREQUENCY (GHz)
POUT - 1dB (dBm)
Id=40mA
Id=60mA
Id=75mA
SiliconBipolar MMIC Cascadable Amplifier MP4TD1170
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
3
3.5
4
4.5
5
5.5
6
0.1 1 10
FREQUENCY (GHz)
NOISE FIGURE (dB)
Id=40mA
Id=60mA
Id=75mA
REVERSE ISOLATION vs FREQUENCY
-19
-17
-15
-13
-11
-9
-7
-5
-3
0.1 1 10
FREQUENCY (GHz)
REVERSE ISOLATION (dB)
Typical Scattering Parameters
Z0 = 50Ω, TA = +25 °C, Id = 60 mA
Frequency S11 S
21 S
12 S
22
(GHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.05 0.133 -104.9 4.23 157.5 0.152 14.4 0.120 -98.7
0.1 0.134 -106.7 4.19 156.2 0.154 14.8 0.124 -100.6
0.2 0.140 -112.4 4.05 151.7 0.158 16.2 0.137 -106.6
0.3 0.148 -118.6 3.90 146.8 0.164 17.7 0.153 -113.1
0.4 0.153 -123.0 3.79 143.2 0.168 18.8 0.165 -120.2
0.5 0.162 -129.9 3.62 137.8 0.174 20.5 0.185 -125.1
0.6 0.172 -137.3 3.44 131.2 0.182 22.4 0.208 -132.8
0.7 0.185 -144.4 3.25 124.7 0.190 24.6 0.233 -140.8
0.8 0.198 -148.7 3.12 120.4 0.196 26.3 0.249 -145.3
0.9 0.216 -154.6 2.95 114.4 0.205 28.4 0.271 -151.4
1.0 0.232 -159.8 2.79 108.8 0.214 30.3 0.287 -156.8
1.5 0.279 -179.0 2.23 89.4 0.254 35.8 0.323 -175.4
2.0 0.314 164.8 1.88 74.3 0.294 38.7 0.331 169.7
