© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8 1Publication Order Number:
MMBFJ177LT1/D
MMBFJ177LT1G,
SMMBFJ177LT1G
JFET Chopper
P−Channel − Depletion
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Gate Voltage VDG −25 Vdc
Gate−Source Voltage VGS 25 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
MARKING DIAGRAM
SOT−23 (TO−236)
CASE 318−08
STYLE 10
2 SOURCE
3
GATE
1 DRAIN
12
3
Device Package Shipping†
ORDERING INFORMATION
MMBFJ177LT1G SOT−23
(Pb−Free) 3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
6Y MG
G
6Y = Specific Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SMMBFJ177LT1G SOT−23
(Pb−Free) 3000 / Tape &
Reel
www.onsemi.com
MMBFJ177LT1G, SMMBFJ177LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc) V(BR)GSS 30 − Vdc
Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) IGSS − 1.0 nAdc
Gate Source Cutoff Voltage (VDS = −15 Vdc, ID = −10 nAdc) VGS(off) 0.8 2.5 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VGS = 0, VDS = −15 Vdc) (Note 2) IDSS −1.5 −20 mAdc
Drain Cutoff Current (VDS = −15 Vdc, VGS = 10 Vdc) ID(off) −−1.0 nAdc
Drain Source On Resistance (ID = −500 mAdc) rDS(on) − 300 W
Input Capacitance VDS = 0, VGS = 10 Vdc
f = 1.0 MHz Ciss −11 pF
Reverse Transfer Capacitance Crss − 5.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
Figure 1. Drain Current vs. Drain−Source
Voltage Figure 2. Reverse Transfer Capacitance
VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V)
−12−10−8−6−4−20
0
−1
−2
−3
−4
−6
−7
−8
−25−20−15−10−50
0
4
6
10
12
14
Figure 3. Input Capacitance
VDS, DRAIN−SOURCE VOLTAGE (V)
−25−20−15−10−50
0
8
12
20
24
32
ID, DRAIN CURRENT (mA)
Crss, REVERSE TRANSFER
CAPACITANCE (pF)
Ciss, INPUT CAPACITANCE (pF)
−5
VGS = 0 V
VGS = 0.9 V
VGS = 0.7 V
VGS = 0.5 V
VGS = 0.3 V
VGS = 0.1 V
2
8
4
16
28
VGS = 0 V
f = 1 MHz
VGS = 0 V
f = 1 MHz
MMBFJ177LT1G, SMMBFJ177LT1G
www.onsemi.com
3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
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MMBFJ177LT1/D
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