C
TOP
B E
C
BACK
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBTA42E TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Power dissipation PCM : 0.15 W (Tamb=25℃)
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1D
C
1D
B E
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 310 V
VCEO Collector-Emitter Voltage 305 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 300 mA
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
RӨJA Thermal Resistance, junction to Ambient 200 ℃/W
RӨJC Thermal Resistance, unction to Case 83.3 ℃/W
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100µA, IE=0 310 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 305 V
Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V
Collector cut-off current ICBO V
CB=200V, IE=0 0.25
µA
VCE=200V, IB=0 0.25
µA
Collector cut-off current I CEO VCE=300V, IB=0 5
µA
Emitter cut-off current IEBO V
EB= 5V, IC=0 0.1
µA
hFE(1) V
CE=10V, IC=1mA 60
hFE(2) V
CE=10V, IC=10mA 100 200
DC current gain
hFE(3) V
CE=10V, IC=30mA 75
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V
Transition frequency fT VCE=20V, IC= 10mA
f=30MHz 50 MHz
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR