AON7408
30V N-Channel MOSFET
Features
VDS (V) = 30V
ID= 23A (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 10V)
RDS(ON) < 32mΩ(VGS = 4.5V)
100% UIS Tested!
General Description
The AON7408 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in general
purpose applications.
G
D
S
DFN 3x3 EP
Top View Bottom View
Pin 1
Top View
1
2
3
4
8
7
6
5
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
25 40
62 75
R
θJC
6.2 7.5 °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
°C/W
Maximum Junction-to-Case
B
Steady-State
Maximum Junction-to-Ambient
A
Steady-State
T
A
=70°C
3.1
V±20Gate-Source Voltage
I
D
Pulsed Drain Current
C
Power Dissipation
B
W
10
Continuous Drain
Current
A
T
A
=25°C I
DSM
T
A
=25°C P
DSM
T
C
=25°C
Continuous Drain
Current
B
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C 23
15
Drain-Source Voltage 30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
A
8
64
Junction and Storage Temperature Range
P
D
°C
16.7
7
-55 to 150
T
C
=100°C
T
A
=70°C 2Power Dissipation
A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON7408
Symbol Min Typ Max Units
BV
DSS
30 V
1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
1.5 2.1 2.6 V
I
D(ON)
64 A
15.3 20
T
J
=125°C 23.3 30
22.7 32
g
FS
17 S
V
SD
0.75 1 V
I
S
3.8 A
C
iss
373 448 pF
C
oss
67 pF
C
rss
41 pF
R
g
1.8 2.8 Ω
Q
g
7.1 8.6 nC
Q
gs
1.2 nC
Q
gd
1.6 nC
t
D(on)
4.3 ns
t
r
ns
V
GS
=10V, V
DS
=5V
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
GS
=10V, I
D
=10A
Reverse Transfer Capacitance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=10A
V
GS
=0V, V
DS
=15V, f=1MHz
Turn-On Rise Time
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
R
DS(ON)
Static Drain-Source On-Resistance V
GS
=4.5V, I
D
=5A mΩ
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS ,
I
D
=250µA
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=10A
Gate Drain Charge
V
GS
=10V, V
DS
=15V, R
L
=1.5
Ω
,
Turn-On DelayTime
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
t
r
ns
t
D(off)
15.8 ns
t
f
3 ns
t
rr
10.5 12.6 ns
Q
rr
4.5 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=10A, dI/dt=100A/µs
Body Diode Reverse Recovery Time I
F
=10A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.5
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
A: The value of RθJA is measured with the device in a still air environment with TA=25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤10s junction-to-ambient thermal resistance.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
Rev5: May-2012
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
373 448
67
41
1.2 1.8
7.1 8.6
3.5
1.2
1.6
0
3
6
9
12
15
1.5 2 2.5 3 3.5 4 4.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
10
15
20
25
30
35
40
0
5
10
15
20
RDS(ON) (mΩ
Ω
Ω
Ω)
0.6
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Normalized On-Resistance
VGS=10V
VGS=4.5V
25°C
125°C
V
DS
=5V
VGS=4.5V
V
GS
=10V
0
10
20
30
40
50
60
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
V
GS
=3.5V
4.5V
6V
10V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0
3
6
9
12
15
1.5 2 2.5 3 3.5 4 4.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
10
15
20
25
30
35
40
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
VGS=4.5V
10
20
30
40
50
60
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
V
DS
=5V
VGS=4.5V
V
GS
=10V
ID=10A
25°C
125°C
0
10
20
30
40
50
60
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
V
GS
=3.5V
4.5V
6V
10V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
373 448
67
41
1.2 1.8
7.1 8.6
3.5
1.2
1.6
0
2
4
6
8
10
02468
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
500
600
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=15V
ID=10A
1
10
100
1000
0.0001
0.01
1
100
Power (W)
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
100
0.1
1
10
100
ID(Amps)
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
1ms
10µs
DC
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
02468
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
500
600
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Coss
C
rss
VDS=15V
ID=10A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
10
100
1000
0.0001 0.01 1 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
100
0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
1ms
10µs
DC
Alpha & Omega Semiconductor, Ltd. www.aosmd.com