TPC6103
2004-12-14
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6103
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 13 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −12 V)
• Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V,ID = −200 µA)
Maximum Ra tings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS −12 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −12 V
Gate-source voltage VGSS ±8 V
DC (Note 1) ID −5.5
Drain current
Pulse (Note 1) IDP −22
A
Drain power dissipation (t = 5 s)
(Note 2a)
PD 2.2 W
Drain power dissipation (t = 5 s)
(Note 2b)
PD 0.7 W
Single pulse avalanche energy
(Note 3)
EAS 5.3 mJ
Avalanche current IAR −2.75 A
Repetitive avalanche energy (Note 4) EAR 0.22 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to
ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W
Thermal resistance, channel to
ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W
Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
Circuit Co nfig ur ation
6 4
1 2 3
5
TPC6103
2004-12-14
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 µA
Drain cut-off current IDSS V
DS = −12 V, VGS = 0 V ⎯ ⎯ −10 µA
V (BR) DSS ID = −10 mA, VGS = 0 V −12 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = −10 mA, VGS = 8 V −
4 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = −10 V, ID = −200 µA −0.5 ⎯ −1.2 V
RDS (ON) V
GS = −1.8 V, ID = −1.4 A ⎯ 65 90
RDS (ON) V
GS = −2.5 V, ID = −2.8 A ⎯ 42 55
Drain-source ON resistance
RDS (ON) V
GS = −4.5 V, ID = −2.8 A ⎯ 29 35
mΩ
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.8 A 6.5 13 ⎯ S
Input capacitance Ciss ⎯ 1520 ⎯
Reverse transfer capacitance Crss ⎯ 330 ⎯
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯ 380 ⎯
pF
Rise time tr ⎯ 9.5 ⎯
Turn-on time ton ⎯ 16 ⎯
Fall time tf ⎯ 28 ⎯
Switching time
Turn-off time toff
Duty
<
=
1%, tw = 10 µs ⎯ 74 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 20 ⎯
Gate-source charge Qgs ⎯ 15 ⎯
Gate-drain (“miller”) charge Qgd
VDD
∼
−
−10 V, VGS = −5 V,
ID = −5.5 A
⎯ 5 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current Pulse (Note 1) IDRP — — —
−22 A
Forward voltage (diode) VDSF IDR = −5.5 A, VGS = 0 V — — 1.2 V
RL = 2.1 Ω
VDD
∼
−
−6 V
−5 V
VGS
0 V
4.7 Ω
ID = −2.8 A
VOUT
TPC6103
2004-12-14
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Marking ( N ote 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
Note 3: VDD = −10 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.75 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
(b)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
Part No.
(or abbreviation code) S3C
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month) Lot No.
Pin #1 Lot code
(year)
Product-specific code
TPC6103
2004-12-14
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Forward transfer admittance |Yfs| (S)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Gate-source voltage VGS (V)
VDS – VGS
Drain current ID (A)
|Yfs| – ID
Drain current ID (A)
Drain-source on resistance
RDS (ON) (m
Ω)
RDS (ON) – ID
0
0
−1
−2
−3
−4
−5
−0.4 −0.8 −1.2 −2.0
Common source
Ta = 25°C Pulse test
VGS = −1.4 V
−4, −4.5
−5
−1.6
−3
−2.5 −2
−1.9
−1.8
−1.7
−1.6
−1.5
0−1−2−3 −4 −5
−1.7
−2.5
−1.6
VGS = −1.4 V
−2
−
3
0
−2
−4
−6
−8
−10 Common source
Ta = 25°C Pulse test
−1.9
−1.8
−
5
−
4
Ta = −55°C
0
−2
−4
−6
−8
−10
0 −0.5 −1 −1.5 −2 −2.5
100°C
25°C
Common source
VDS = −10 V
Pulse test
0
−0.2
−0.4
−0.6
−0.8
−1
0−2−4−6 −8 −10
−1.1 A −2.2 A
Common source
Ta = 25°C
Pulse test
ID = −4.5 A
0.1
1
10
100
−0.1 −1 −10 −100
100°C
25°C
Ta = −55°C
Common source
VDS = −10 V
Pulse test
0.3
3
30
−0.3 −3−30
0.01
1
−0.1 −1−10 −100
0.1
−2.5 V
VGS = −4.5 V
−1.8 V
Common source
Ta = 25°C
Pulse test
0.03
0.3
−0.3 −3−30
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2004-12-14
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Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source on resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Ambient temperature Ta (°C)
Vth – Ta
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
PD – Ta
Drain power dissipation PD (W)
Gate-source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
Drain-source voltage VDS (V)
10
100
1000
10000
−0.1 −1 −10 −100
Crss
Coss
Ciss
Common source
Ta = 25°C
f = 1 MHz
VGS = 0 V
−0.3 −3−30
30
300
3000
0
−0.5
−1.5
−2.0
−80 −40 0 40 80 160
Common source
VDS = −10 V
ID = −200 µA
Pulse test
120
−1.0
−1
−10
0 0.4 0.8 1.2 1.6 2.0
−100
Common source
Ta = 25°C
Pulse test
−2.0
−1
VGS = 0 V
−4.5
−3
−30
−1.8
0
0
0.5
1
1.5
2
2.5
40 80 120 160
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
(1) t = 5 s
(2) t = 5 s
(1) DC
(2) DC
160
0
40
80
120
−80 −40 0 40 80 160120
Common source
Pulse test
VGS = −1.8 V
ID = −1.4A
−2.8 A
ID = −1.4A
−5.5 A
−2.8 A
ID = −1.4 A, −2.8 A, −5.5 A
−2.5 V
−4.5 V
0
0816
−4
−12
−20
0
−2
−6
−10
−8
24 32 40
−8
−16
−4
−5 V
VDD = −10 V
VGS
VDD = −10 V
−5
−2.5 V
−2.5 V
Common source
ID = −5.5 A
Ta = 25°C
Pulse test
TPC6103
2004-12-14
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−0.001
−0.01 −0.03 −0.1 −0.3 −1 −3 −10 −100−30
−0.003
−0.01
−0.03
−0.1
−0.3
−10
−1
−3
−100
−30
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature
て
デレテ グ
し
ID max (pulsed)*
10 ms*
1 ms*
VDSS max
rth – tw
Pulse width tw (s)
Transient thermal impedance rth (°C/W)
0.1
0.001 0.01 0.1 10 100 1000
1
0.3
3
30
100
300
1000
Single pulse
Device mounted on a glass-
epoxy board (b) (Note 2b)
1
10
Safe operating area
Drain-source voltage VDS (V)
Drain current ID (A)
Device mounted on a glass-
epoxy board (a) (Note 2a)
TPC6103
2004-12-14
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may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
