TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm * Low drain-source ON resistance: RDS (ON) = 29 m (typ.) * High forward transfer admittance: |Yfs| = 13 S (typ.) * Low leakage current: IDSS = -10 A (max) (VDS = -12 V) * Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V,ID = -200 A) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -12 V Drain-gate voltage (RGS = 20 k) VDGR -12 V Gate-source voltage VGSS 8 V (Note 1) ID -5.5 Pulse (Note 1) IDP -22 Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) EAS 5.3 mJ Avalanche current IAR -2.75 A Repetitive avalanche energy (Note 4) EAR 0.22 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Drain current DC A JEDEC JEITA TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration 6 5 4 1 2 3 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 C/W Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-12-14 TPC6103 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 8 V, VDS = 0 V 10 A Drain cut-off current IDSS VDS = -12 V, VGS = 0 V -10 A V (BR) DSS ID = -10 mA, VGS = 0 V -12 V (BR) DSX ID = -10 mA, VGS = 8 V -4 Drain-source breakdown voltage Vth VDS = -10 V, ID = -200 A -0.5 -1.2 RDS (ON) VGS = -1.8 V, ID = -1.4 A 65 90 RDS (ON) VGS = -2.5 V, ID = -2.8 A 42 55 RDS (ON) VGS = -4.5 V, ID = -2.8 A 29 35 Forward transfer admittance |Yfs| VDS = -10 V, ID = -2.8 A 6.5 13 Input capacitance Ciss 1520 Reverse transfer capacitance Crss 330 Output capacitance Coss 380 9.5 16 28 74 20 15 5 Drain-source ON resistance Rise time VDS = -10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-on time ton Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain ("miller") charge Qgd -5 V 4.7 Switching time ID = -2.8 A VOUT 0V RL = 2.1 Gate threshold voltage VDD - -6 V Duty < = 1%, tw = 10 s VDD - -10 V, VGS = -5 V, ID = -5.5 A V V m S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP -- -- -- -22 A VDSF IDR = -5.5 A, VGS = 0 V -- -- 1.2 V 2 2004-12-14 TPC6103 Marking (Note 5) Lot code (month) Part No. (or abbreviation code) Pin #1 Note 1: Lot No. S3C Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) (a) (b) Note 3: VDD = -10 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -2.75 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * on lower left of the marking indicates Pin 1. 3 2004-12-14 TPC6103 ID - VDS -1.8 -1.9 -5 -2.5 -4 -1.9 -8 ID -1.6 -1.5 -1 VGS = -1.4 V Drain current -2 -5 -0.8 -1.2 Drain-source voltage -1.6 -4 -1.8 -6 -1.7 -4 -1.6 -2 VGS = -1.4 V Common source Ta = 25C Pulse test -0.4 0 0 -2.0 -1 VDS (V) -2 VDS (V) (V) Common source Ta = 25C Pulse test -0.8 VDS Drain-source voltage -6 100C -4 25C -2 Ta = -55C -0.6 -0.4 -0.2 ID = -4.5 A -2.2 A -1.1 A 0 0 -0.5 -1 -1.5 Gate-source voltage VGS -2 0 0 -2.5 (V) -2 VGS -10 (V) Common source Ta = 25C Pulse test Ta = -55C 10 100C 3 25C 1 0.3 0.1 -1.8 V -2.5 V 0.03 VGS = -4.5 V 0.3 -0.3 -8 RDS (ON) - ID Common source VDS = -10 V Pulse test 0.1 -0.1 -6 1 Drain-source on resistance RDS (ON) (m) (S) |Yfs| 30 -4 Gate-source voltage |Yfs| - ID 100 Forward transfer admittance -5 VDS - VGS (A) ID Drain current -4 -1 Common source VDS = -10 V Pulse test -8 -3 Drain-source voltage ID - VGS -10 Common source Ta = 25C Pulse test -2 -3 -2 -3 0 0 -2.5 -1.7 -3 -4, -4.5 (A) ID Drain current ID - VDS -10 (A) -5 -1 -3 Drain current -10 -30 0.01 -0.1 -100 ID (A) -0.3 -1 -3 Drain current 4 -10 -30 -100 ID (A) 2004-12-14 TPC6103 RDS (ON) - Ta IDR - VDS -100 160 Common source Ta = 25C Pulse test Common source IDR (A) Drain reverse current -2.8 A 80 VGS = -1.8 V -5.5 A ID = -1.4A 40 -2.5 V ID = -1.4A ID = -1.4 A, -2.8 A, -5.5 A -4.5 V -40 0 40 Ambient temperature 80 120 Ta -10 -1.8 -3 -1 VGS = 0 V -1 0 160 -4.5 -2.0 0.4 (C) 0.8 Drain-source voltage Vth (V) Gate threshold voltage Capacitance C (pF) Ciss 1000 Coss 300 Crss 100 Common source Ta = 25C f = 1 MHz VGS = 0 V -1 -0.3 -3 Drain-source voltage -10 -30 -1.5 -1.0 -0.5 -40 VDS (V) 40 120 80 Ta 160 (C) Dynamic input/output characteristics -20 (1) t = 5 s (V) 2 Drain-source voltage VDS (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1.5 -10 Common source (1) Device mounted on a glass-epoxy board (a) (Note 2a) PD (W) 0 Ambient temperature PD - Ta Drain power dissipation VDS (V) Common source VDS = -10 V ID = -200 A Pulse test 0 -80 -100 2.5 (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 2.0 -2.0 3000 10 -0.1 1.6 Vth - Ta Capacitance - VDS 10000 30 1.2 ID = -5.5 A VGS -16 Ta = 25C Pulse test -8 -2.5 V -12 -6 VDD = -10 V VDD = -10 V -8 -4 -5 V -5 -4 -2 VGS (V) 0 -80 -2.8 A -30 Gate-source voltage Drain-source on resistance RDS (ON) (m) Pulse test 120 -2.5 V 40 80 Ambient temperature 120 Ta 0 0 160 8 16 24 32 0 40 Total gate charge Qg (nC) (C) 5 2004-12-14 TPC6103 rth - tw 300 Device mounted on a glassepoxy board (b) (Note 2b) 100 Transient thermal impedance rth (C/W) 1000 30 Device mounted on a glassepoxy board (a) (Note 2a) 10 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area -100 -30 ID max (pulsed)* 1 ms* -10 Drain current ID (A) 10 ms* -3 -1 -0.3 -0.1 -0.03 -0.01 *: Single nonrepetitive pulse Ta = 25C -0.003 Curves must be derated linearly with increase in temperature -0.001 -0.01 -0.03 -0.1 -0.3 -1 VDSS max Drain-source voltage -3 -10 -30 -100 VDS (V) 6 2004-12-14 TPC6103 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-12-14