VRSM = 2800 V IFAVM = 5150 A IFRMS = 8080 A IFSM = VF0 = 0.77 V rF = 0.082 m 65 kA Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Sep. 01 * Patented free-floating silicon technology * Very low on-state losses * High average and surge current. Blocking Part Number 5SDD 51L2800 5SDD 51L2600 5STP 51L2200 Conditions f = 50 Hz, VRRM 2000 V 1850 V 1600 V VRSM 2800 V 2600 V 2200 V tp = 10ms VRSM 3000 V 2800 V 2400 V tp 5ms IRRM VRRM 400 mA Tvj = -40C reduces VRSM and VRRM by 5%. Mechanical data Fm a Mounting force nom. 70 kN min. 63 kN max. 77 kN Acceleration m/s2 Device unclamped 100 m/s2 Device clamped tp = 10ms Dp Pole-piece diameter 78 mm H Housing thickness 27 mm m Weight IGCT Ds Surface creepage distance 35 mm Da Air strike distance 14 mm 1.45 kg ABB Semiconductors AG reserves the right to change specifications without notice. Tj = 0-175C Tj = 175C 5SDD 51L2800 On-state IFAVM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current IFRMS IFSM 2 It Limiting load integral 50 Hz, TC = 90C, Half sine wave 5150 A 8080 A 65 kA tp = 10 ms Tj = 175C 70 kA tp = 8.3 ms After surge: 2 tp = 10 ms VR = 0V 2 20335 kA s tp = 8.3 ms 21125 kA s VF On-state voltage 1.18 V IF = 5000 A VF0 Threshold voltage 0.77 V IF = 2500 - 7500 A rF Slope resistance 0.082 m Tj = 175C Switching Qrr Recovery charge max 7000 As diF/dt = -10A/s IFRM = 4000A VR = 200 V Tj = 175C Thermal Tjmax Max. operating junction temperature range Tstg Storage temperature range RthJC Thermal resistance 16 K/kW Anode side cooled junction to case 16 K/kW Cathode side cooled RthCH 175 C -40...150 C 8 K/kW Double side cooled Thermal resistance case to 6 K/kW Single side cooled heat sink 3 K/kW Double side cooled Analytical function for transient thermal impedance: n ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i 1 2 3 Ri(K/kW) 3.5 3.5 1 i(s) 1.0231 0.5199 0.016 4 Fig. 1 Transient thermal impedance junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1103-01 Sep. 01 page 2 of 5 5SDD 51L2800 On-state characteristic model: VT = A + B iT + C ln(iT +1) + D IT Valid for iT = 0 - 30000 A A B C D 2.158 0.398 3.158 -3.626 Fig. 2 On-state characteristics. Fig. 4 On-state power losses vs average onstate current. Fig. 3 On-state characteristics. Fig. 5 Max. permissible case temperature vs average on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1103-01 Sep. 01 page 3 of 5 5SDD 51L2800 Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1103-01 Sep. 01 page 4 of 5 5SDD 51L2800 Fig. 8 Recovery charge vs. decay rate of onstate current. Fig. 9 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1103-01 Sep. 01