ABB Semiconductors AG reserves the right to change specifications without notice.
VRSM = 2800 V
IFAVM = 5150 A
IFRMS = 8080 A
IFSM =65kA
VF0 =0.77V
rF= 0.082 mΩ
ΩΩ
Ω
Doc. No. 5SYA1103-01 Sep. 01
• Patented free-floating silicon technology
• Very low on-state losses
• High average and surge current.
Blocking
Part Number 5SDD 51L2800 5SDD 51L2600 5STP 51L2200 Conditions
VRRM 2000 V 1850 V 1600 V f = 50 Hz,
tp = 10ms
VRSM 2800 V 2600 V 2200 V tp = 10ms
VRSM 3000 V 2800 V 2400 V tp ≤ 5ms
Tj = 0-175°C
IRRM ≤ 400 mA VRRM Tj = 175°C
Tvj = -40°C reduces VRSM and VRRM by 5%.
Mechanical data
nom. 70 kN
min. 63 kNFmMounting force
max. 77 kN
aAcceleration
Device unclamped
Device clamped 100
m/s2
m/s2
DpPole-piece diameter 78 mm
H Housing thickness 27 mm
m Weight IGCT 1.45 kg
DsSurface creepage distance ≥35 mm
DaAir strike distance ≥14 mm
Rectifier Diode
5SDD 51L2800
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01 page 2 of 5
On-state
IFAVM Max. average on-state
current
5150 A
IFRMS Max. RMS on-state current 8080 A
50 Hz, TC = 90°C, Half sine wave
IFSM 65 kA tp
=
10 ms Tj = 175°CMax. peak non-repetitive
surge current 70 kA tp
=
8.3 ms After surge:
I2t Limiting load integral 21125 kA2stp
=
10 ms VR = 0V
20335 kA2stp
=
8.3 ms
VFOn-state voltage 1.18 V IF
=
5000 A
VF0 Threshold voltage 0.77 V IF
=
2500 - 7500 A Tj = 175°C
rFSlope resistance 0.082 mΩ
Switching
Qrr Recovery charge diF/dt = -10A/µs VR = 200 Vmax 7000 µAs
IFRM = 4000A Tj = 175°C
Thermal
Tjmax Max. operating junction temperature
range
175 °C
Tstg Storage temperature range -40…150 °C
RthJC Thermal resistance 16 K/kW Anode side cooled
junction to case 16 K/kW Cathode side cooled
8 K/kW Double side cooled
RthCH Thermal resistance case to 6 K/kW Single side cooled
heat sink 3 K/kW Double side cooled
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1234
Ri(K/kW) 3.5 3.5 1
τi(s) 1.0231 0.5199 0.016
Fig. 1 Transient thermal impedance junction to case.
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01 page 3 of 5
On-state characteristic model:
ITDiTCiTBAVT ⋅++⋅+⋅+= )1ln(
Valid for iT = 0 – 30000 A
AB CD
2.158 0.398 3.158 -3.626
Fig. 2 On-state characteristics. Fig. 3 On-state characteristics.
Fig. 4 On-state power losses vs average on-
state current.
Fig. 5 Max. permissible case temperature vs
average on-state current.
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01 page 4 of 5
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1103-01 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 8 Recovery charge vs. decay rate of on-
state current.
Fig. 9 Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
