TSM2318
40V N-Channel MOSFET
1/6 Version: A10
SOT-23
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● Stepper Motors
Ordering Information
Part No.
Package
Packing
TSM2318CX RF
SOT-23
3Kpcs / 7” Reel
TSM2318CX RFG
SOT-23
3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
3.9
A
Pulsed Drain Current
IDM
±16
A
Continuous Source Current (Diode Conduction)a,b
IS
0.8
A
Ta = 25oC
1.25
Maximum Power Dissipation
Ta = 75oC
PD
0.8
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
oC
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RӨJF
50
oC/W
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
100
oC/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
ID (A)
45 @ VGS = 10V
3.9
40
62.5 @ VGS = 4.5V
3.5
Block Diagram
N-Channel MOSFET
Pin Definition:
1. Gate
2. Source
3. Drain
TSM2318
40V N-Channel MOSFET
2/6 Version: A10
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
40
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
--
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
IDSS
--
--
1.0
µA
On-State Drain Current
VDS ≥ 4.5V, VGS = 10V
ID(ON)
6
--
--
A
VGS = 10V, ID = 3.9A
--
36
45
Drain-Source On-State Resistance
VGS = 4.5V, ID = 3.5A
RDS(ON)
--
50
62.5
mΩ
Forward Transconductance
VDS = 10V, ID = 3.9A
gfs
--
11
--
S
Diode Forward Voltage
IS = 1.25A, VGS = 0V
VSD
--
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
--
10
--
Gate-Source Charge
Qgs
--
1.6
--
Gate-Drain Charge
VDS = 20V, ID = 3.9A,
VGS = 10V
Qgd
--
2.1
--
nC
Input Capacitance
Ciss
--
540
--
Output Capacitance
Coss
--
80
--
Reverse Transfer Capacitance
VDS = 20V, VGS = 0V,
f = 1.0MHz
Crss
--
45
--
pF
Switchingc
Turn-On Delay Time
td(on)
--
5
--
Turn-On Rise Time
tr
--
12
--
Turn-Off Delay Time
td(off)
--
20
--
Turn-Off Fall Time
VDD = 20V, RL = 20Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
tf
--
15
--
nS
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
TSM2318
40V N-Channel MOSFET
3/6 Version: A10
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM2318
40V N-Channel MOSFET
4/6 Version: A10
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM2318
40V N-Channel MOSFET
5/6 Version: A10
SOT-23 Mechanical Drawing
Marking Diagram
18
= Device Code
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
SOT-23 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX.
A
0.95 BSC
0.037 BSC
A1
1.9 BSC
0.074 BSC
B
2.60
3.00
0.102
0.118
C
1.40
1.70
0.055
0.067
D
2.80
3.10
0.110
0.122
E
1.00
1.30
0.039
0.051
F
0.00
0.10
0.000
0.004
G
0.35
0.50
0.014
0.020
H
0.10
0.20
0.004
0.008
I
0.30
0.60
0.012
0.024
J
5º
10º
5º
10º
TSM2318
40V N-Channel MOSFET
6/6 Version: A10
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
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