TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS (V) RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 40 Features ID (A) 45 @ VGS = 10V 3.9 62.5 @ VGS = 4.5V 3.5 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Part No. Package Packing TSM2318CX RF SOT-23 3Kpcs / 7" Reel TSM2318CX RFG SOT-23 3Kpcs / 7" Reel N-Channel MOSFET Note: "G" denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V ID 3.9 A IDM 16 A IS 0.8 A Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range 1.25 W 0.8 TJ +150 o C TJ, TSTG -55 to +150 o C Symbol Limit Thermal Performance Parameter Junction to Case Thermal Resistance RJF Junction to Ambient Thermal Resistance (PCB mounted) RJA 50 100 Unit o C/W o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. 1/6 Version: A10 TSM2318 40V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250A BVDSS 40 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250A VGS(TH) 1 -- 3 V Gate Body Leakage VGS = 20V, VDS = 0V IGSS -- -- 100 nA Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V IDSS -- -- 1.0 A On-State Drain Current VDS 4.5V, VGS = 10V ID(ON) A Drain-Source On-State Resistance VGS = 10V, ID = 3.9A VGS = 4.5V, ID = 3.5A RDS(ON) 6 -- -- -- 36 45 -- 50 62.5 m Forward Transconductance VDS = 10V, ID = 3.9A gfs -- 11 -- S Diode Forward Voltage IS = 1.25A, VGS = 0V VSD -- 0.8 1.2 V Qg -- 10 -- Qgs -- 1.6 -- Qgd -- 2.1 -- Ciss -- 540 -- Coss -- 80 -- Crss -- 45 -- td(on) -- 5 -- tr -- 12 -- td(off) -- 20 -- -- 15 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 20V, ID = 3.9A, VGS = 10V VDS = 20V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 20V, RL = 20, ID = 1A, VGEN = 10V, RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 nS Version: A10 TSM2318 40V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A10 TSM2318 40V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A10 TSM2318 40V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5 10 5 10 Marking Diagram 18 = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A10 TSM2318 40V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A10