N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
■Features
●Low on-resistance
●Low input capacitance
●Avalanche energy capability guaranteed
■Package---FM100 (TO-3P Full Mold)
■Applications
●PDP driving
●High speed switching
■Equivalent circuit
■Absolute maximum ratings
(Ta=25°C）
Parameter Symbol Rating Unit
Drain to Source Voltage VDSS 250 V
Gate to Source Voltage VGSS ±30 V
Continuous Drain Current ID ±50A A
Pulsed Drain Current ID(pulse) *1 ±200A A
Maximum Power Dissipation PD 85 (Tc=25°C) W
Single Pulse Avalanche Energy EAS *2 400 mJ
Avalanche Current IAS 50 A
Channel Temperature Tch 150 °C
Storage Temperature Tstg －55 to 150 °C
*1 PW≤100μs，duty cycle≤１%
*2 VDD=20V, L=300μH, ILp=50A, unclamped, RG=50Ω, See Fig.1
G (1)
S (3)
D (2)
http://www.sanken-ele.co.jp/en/
N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
Electrical characteristics
(Ta=25°C）
Limits
Parameter Symbol Test Conditions
MIN. TYP. MAX.
Unit
Drain to Source breakdown Voltage V(BR)DSS ID=100μA,VGS=0V 250 V
Gate to Source Leakage Current IGSS VGS=±30V ±100 nA
Drain to Source Leakage Current IDSS VDS=250V, VGS=0V 100 μA
Gate Threshold Voltage VTH VDS=10V, ID=1mA 3.0 4.5 V
Forward Transconductance Re(Yfs) VDS=10V, ID=25A 30 42 S
Static Drain to Source On-Resistance RDS(on) ID=25A, VGS=10V 37 43 mΩ
Input Capacitance Ciss 3800
Output Capacitance Coss 630
Reverse Transfer Capacitance Crss
VDS=25V
VGS=0V
f=1MHz 210
pF
Turn-On Delay Time td(on) 40
Rise Time tr 110
Turn-Off Delay Time td(off) 160
Fall Time tf
ID=25A, VDD≈125V
RL=5Ω, VGS=10V
RG=5Ω
See Fig.2
90
ns
Source-Drain Diode Forward Voltage VSD ISD=50A,VGS=0V 1.0 1.5 V
Gate Threshold Voltage Temp.
Coefficient
ΔVTH
/ΔTch VDS=10V, ID=1mA -11 mV/°C
N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
Characteristic Curves (Tc=25℃)
ID-VDS Characteristics (typical)
0
10
20
30
40
50
0246810
VDS (V)
ID (A)
VGS=10V
4.5V
6.0V
5.5V
5.0V
ID-VGS Characteristics (typical)
0
10
20
30
40
50
0246810
VGS (V)
ID (A)
VDS=10V
Tc=-55℃
25℃
125℃
RDS(ON)-ID Characteristics (typical)
0
10
20
30
40
50
60
0 1020304050
ID (A)
RDS(on) (mΩ)
VGS=10V
VDS-VGS Characteristics (typical)
0
1
2
3
4
5
1 10 100
VGS (V)
VDS (V)
ID=50A
ID=25A
RDS(ON)-Tc Characteristics (typical)
0
10
20
30
40
50
60
70
80
90
100
-100 -50 0 50 100 150
Tc (℃)
RDS(on) (mΩ)
ID=25A
VGS=10V
N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
Characteristic Curves (Tc=25℃)
Re(yfs)-ID Characteristics (typical)
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID (A)
Re(yfs) (S)
VDS=10V
Tc=-55℃
25℃
125℃
Capacitance-VDS Characteristics (typical)
10
100
1000
10000
0 1020304050
VDS (V)
Capacitance (pF)
f=1MHz
VGS=0V
Ciss
Coss
Crss
IDR-VSD Characteristics (typical)
0
10
20
30
40
50
0.0 0.5 1.0 1.5
VSD (V)
IDR (A)
VGS=0V
10V
SAFE OPERATING AREA
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
VDS [V]
ID [A]
100μs(1shot)
1ms
DC
ID(pulse) max
ID max
RDS(on) LIMITED
PD-Ta Characteristics
0
20
40
60
80
100
050100150
Ta (℃)
PD (W)
With infinite heatsink
Without heatsink
N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
Fig.1 Unclamped Inductive Test Method
(a) Test Circuit (b) Waveforms
Fig.2 Switching Time Test Method
V
DD≈125
I
D=25
R
L=5Ω
V
GS=10V
R
G=5Ω
I
D
V
DS
V
DD
R
G
R
L
V
GS
0V
P.W.=10μs
Duty cycle≦1%
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
90%
10%
90%
10%
V
GS
V
DS
(a) Test Circuit
EAS=2
1·L·ILP2·
DD(BR)DSS
(BR)DSS
VV
V
−
V
DD
I
L
V
DS
R
G
L
V
GS
0V
I
Lp
I
L
V
(BR)DSS
V
DD
V
DS
(b) Waveforms
N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
External dimensions
FM100 (TO-3P Full Mold)
Weight Approx. 6.5g
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
<Worldwide Contacts>
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262
Fax: 852-2735-5494
Sanken Elect ric (Shanghai) Co., Ltd.
Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: 86-21-5208-1177
Fax: 86-21-5208-1757
India
Saket Devices Pvt. Ltd.
Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India
Tel: 91-20-5621-2340
91-20-2528-5449
Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters
Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Tel: 81-3-3986-6164
Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700
Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West, Singapore 189720
Tel: 65-6291-4755
Fax: 65-6297-1744
Taiwan
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161
Fax: 886-2-2356-8261
N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
Europe
United Kingdom
Sanken Power Systems (UK) Limited
Pencoed Technology Park Pencoed, Bridgend CF35 5HY. UK
Tel: 44-1656-869-100
Fax: 44-1656-869-162
North America
United States
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000
Fax: 1-508-853-3353
Allegro MicroSystems, Inc. (Southern Californi a)
14 Hughes Street, Suite B105, Irvine, CA 92618
Tel: 1-949-460-2003
Fax: 1-949-460-7837
N-Channel MOS FET
FKP250A June, 2007
Sanken Electric Co., Ltd.
T02-008EA-070531
CAUTION / WARNING
●The information in this publication has been carefully checked and is believed to be accurate; however, no
responsibility is assumed for inaccuracies.
● Sanken reserves the right to make changes without further notice to any products herein in the interest of
improvements in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify
that the information being relied upon is current.
● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use
of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights,
intellectual property rights or any other rights of Sanken or any third party which may result from its use.
● When using the products herein, the applicability and suitability of such products for the intended purpose or object
shall be reviewed at the users’ responsibility.
● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect
of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own
risk, preventative measures including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
● Sanken products listed in this catalog are designed and intended for the use as components in general purpose
electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring
equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability is required (transportation
equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various
safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written
confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the
applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life
support systems, etc.) is strictly prohibited.
● Anti radioactive ray design is not considered for the products listed herein.
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