TSM1N60L
600V N-Channel Power MOSFET
1/7
Version: B07
TO
-
252
TO
-
251
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a
fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
● I
DSS
and V
DS(on)
specified at elevated temperature
Ordering Information
Part No. Package
Packing
TSM1N60LCP RO
TO-252 2.5Kpcs / 13” Reel
TSM1N60LCH C5
TO-251 50pcs / Tube
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
600 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current I
D
1 A
Pulsed Drain Current I
DM
4 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1 A
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25Ω) EAS 20 mJ
Maximum Power Dissipation @T
C
=25
o
C P
DTOT
30 W
Peak Diode Recovery Voltage Slope dv/dt 3 V/ns
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
Notes:
1. Pulse width limited by safe operating area
2. ISD≤1A, di/dt≤100A/us, VDD≤BV
DSS
, T
J
<=T
JMAX
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) I
D
(A)
600 12 @ V
GS
=10V 1
Pin
Definition
:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET
TSM1N60L
600V N-Channel Power MOSFET
2/7
Version: B07
Thermal Performance
Parameter Symbol Limit Unit
Lead Temperature (1/8” from case) T
L
10 S
Thermal Resistance – Junction to Case RӨ
J
C
4.16
o
C/W
Thermal Resistance - Junction to Ambient RӨ
JA
100
o
C/W
Notes: Surface mounted on FR4 board of 1 in
2
, 2oz Cu, t ≤ 10sec
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max
Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
600 -- -- V
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 0.6A R
DS(ON)
-- 10.5 12 Ω
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
2.0 -- 4.0 V
Zero Gate Voltage Drain Current V
DS
= 600V, V
GS
= 0V I
DSS
-- -- 10 uA
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ± 100
nA
Forward Transconductance V
DS
≧50V, I
D
= 0.5A g
fs
-- 10 -- S
Diode Forward Voltage I
S
= 1A, V
GS
= 0V V
SD
-- -- 1.5 V
Dynamic
b
Total Gate Charge V
DS
= 400V, I
D
= 1A,
V
GS
= 10V
Q
g
-- 8.5 14
nC
Gate-Source Charge Q
gs
-- 1.8 --
Gate-Drain Charge Q
gd
-- 4 --
Input Capacitance V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 210 --
pF
Output Capacitance C
oss
-- 28 --
Reverse Transfer Capacitance C
rss
-- 4.2 --
Switching
b,
c
Turn-On Delay Time V
GS
= 10V, I
D
= 1A,
V
DS
= 300V, R
G
= 6Ω
t
d(on)
-- 8 --
nS
Turn-On Rise Time t
r
-- 21 --
Turn-Off Delay Time t
d(off)
-- 18 --
Turn-Off Fall Time t
f
-- 24 --
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM1N60L
600V N-Channel Power MOSFET
3/7
Version: B07
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM1N60L
600V N-Channel Power MOSFET
4/7
Version: B07
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM1N60L
600V N-Channel Power MOSFET
5/7
Version: B07
TO-252 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
TO-252 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 2.290 BSC 0.090 BSC
A1
4.600 BSC 0.180 BSC
B 7.000 7.200 0.275 0.283
C 6.000 6.200 0.236 0.244
D 6.400 6.604 0.252 0.260
E 2.210 2.387 0.087 0.094
F 0.010 0.127 0.000 0.005
G 5.232 5.436 0.206 0.214
G1
0.666 0.889 0.026 0.035
G2
0.633 0.889 0.025 0.035
H 0.508 REF 0.020 REF
I 0.900 1.500 0.035 0.059
J 2.743 REF 0.108 REF
K 0.660 0.940 0.026 0.037
L 1.397 1.651 0.055 0.065
M 1.100 REF 0.043 REF
TSM1N60L
600V N-Channel Power MOSFET
6/7
Version: B07
TO-251 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
TO-251 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 2.190
2.380
0.0862 0.0937
A1
0.890
1.140
0.0350 0.0449
b 0.640
0.890
0.0252 0.0350
b1
0.760
1.140
0.0299 0.0449
b2
5.210
5.460
0.2051 0.2150
C 0.460
0.580
0.0181 0.0228
C1
0.460
0.580
0.0181 0.0228
D 5.970
6.100
0.2350 0.2402
E 6.350
6.730
0.2500 0.2650
e 2.280 BSC 0.0898 BSC
L 8.890
9.650
0.3500 0.3799
L1
1.910
2.280
0.0752 0.0898
L2
0.890
1.270
0.0350 0.0500
L3
1.150
1.520
0.0453 0.0598
TSM1N60L
600V N-Channel Power MOSFET
7/7
Version: B07
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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