TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)() ID (A) 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Block Diagram Features Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Ordering Information Part No. Package Packing TSM1N60LCP RO TO-252 2.5Kpcs / 13" Reel TSM1N60LCH C5 TO-251 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V ID 1 A IDM 4 A IS 1 A EAS 20 mJ Maximum Power Dissipation @TC=25 C PDTOT 30 W Peak Diode Recovery Voltage Slope dv/dt 3 V/ns TJ +150 o -55 to +150 o Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25) o Operating Junction Temperature Operating Junction and Storage Temperature Range Notes: 1. Pulse width limited by safe operating area 2. ISD1A, di/dt100A/us, VDDBVDSS, TJ<=TJMAX TJ, TSTG 1/7 C C Version: B07 TSM1N60L 600V N-Channel Power MOSFET Thermal Performance Parameter Lead Temperature (1/8" from case) Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient 2 Notes: Surface mounted on FR4 board of 1 in , 2oz Cu, t 10sec Symbol Limit TL RJC RJA 10 4.16 100 Unit S C/W o C/W o Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 0.6A RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS Gate Body Leakage VGS = 20V, VDS = 0V IGSS Forward Transconductance VDS 50V, ID = 0.5A gfs Diode Forward Voltage IS = 1A, VGS = 0V VSD b Dynamic Total Gate Charge Qg VDS = 400V, ID = 1A, Gate-Source Charge Qgs VGS = 10V Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 25V, VGS = 0V, Output Capacitance Coss f = 1.0MHz Reverse Transfer Capacitance Crss b,c Switching Turn-On Delay Time td(on) Turn-On Rise Time tr VGS = 10V, ID = 1A, V = 300V, R = 6 Turn-Off Delay Time td(off) DS G Turn-Off Fall Time tf Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. For design reference only, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/7 Min Typ Max Unit 600 -2.0 ----- -10.5 ---10 -- -12 4.0 10 100 -1.5 V V uA nA S V ------- 8.5 1.8 4 210 28 4.2 14 ------ ----- 8 21 18 24 ----- nC pF nS Version: B07 TSM1N60L 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: B07 TSM1N60L 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: B07 TSM1N60L 600V N-Channel Power MOSFET TO-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.290 BSC 0.090 BSC 4.600 BSC 0.180 BSC 7.000 7.200 0.275 0.283 6.000 6.200 0.236 0.244 6.400 6.604 0.252 0.260 2.210 2.387 0.087 0.094 0.010 0.127 0.000 0.005 5.232 5.436 0.206 0.214 0.666 0.889 0.026 0.035 0.633 0.889 0.025 0.035 0.508 REF 0.020 REF 0.900 1.500 0.035 0.059 2.743 REF 0.108 REF 0.660 0.940 0.026 0.037 1.397 1.651 0.055 0.065 1.100 REF 0.043 REF Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/7 Version: B07 TSM1N60L 600V N-Channel Power MOSFET TO-251 Mechanical Drawing DIM A A1 b b1 b2 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.190 2.380 0.0862 0.0937 0.890 1.140 0.0350 0.0449 0.640 0.890 0.0252 0.0350 0.760 1.140 0.0299 0.0449 5.210 5.460 0.2051 0.2150 0.580 0.0181 0.0228 0.460 0.460 0.580 0.0181 0.0228 6.100 0.2350 0.2402 5.970 6.350 6.730 0.2500 0.2650 2.280 BSC 0.0898 BSC 8.890 9.650 0.3500 0.3799 1.910 2.280 0.0752 0.0898 0.890 1.270 0.0350 0.0500 1.150 1.520 0.0453 0.0598 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 6/7 Version: B07 TSM1N60L 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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