APTDC40H1201G
APTDC40H1201G – Rev 0 February, 2009
www.microsemi.com 1-3
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Rev e rse Voltage 1200 V
IF(AV) Maximum Average Forward Current Duty cycle = 50% TC = 80°C 40
IFSM Non-Repetitive Forward Surge Current 10 µs TC = 25°C 500 A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
5
3
6CR2
CR1
1
2
4
CR4
CR3
10879
All multiple inputs and outputs must be sho rted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
VRRM = 1200V
IF = 40A @ Tc = 80°C
Application
• Uninterruptible Power Supply (UPS)
• Induction heating
• Welding equipment
• High speed rectifiers
Features
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent s w i t c hi ng behavior
- Positive temperature coefficient on VF
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Low losses
• Low noise switchi n g
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
SiC Diode Full Bridge
Power Module
APTDC40H1201G
APTDC40H1201G – Rev 0 February, 2009
www.microsemi.com 2-3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 40A Tj = 175°C 2.3 3.0 V
Tj = 25°C 128 800
IRM Maximum Reverse Leakage Current VR = 1200V Tj = 175°C 224 4000 µA
QC Total Capacitive Charge IF = 40A, VR = 600V
di/dt =2000A/µs 160 nC
f = 1MHz, VR = 200V 384
C Total Capacitance f = 1MHz, VR = 400V 276 pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance 0.5 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 175
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100 °C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 80 g
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
APTDC40H1201G
APTDC40H1201G – Rev 0 February, 2009
www.microsemi.com 3-3
Typical Performance Curve
Maximum Effecti ve Tran sient Thermal I mpedance, Jun ction to Case vs Pul se Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Puls e
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forw ar d Char acteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3 3.5
V
F
Forwar d Vo l tag e (V)
I
F
Forward Current (A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
100
200
300
400
400 600 800 1000 1200 1400 1600
V
R
Reverse Voltage (V)
I
R
Reverse Curren t (µA)
Capacitance vs. Rever se Voltage
0
400
800
1200
1600
2000
2400
2800
1 10 100 1000
VR Reverse Voltage
C, Capacitance (pF)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covere d by one or m ore of U.S patents 4,895,8 10 5,045,903 5,089, 434 5,182,234 5,019,522 5,262,336 6,503,786 5,2 56,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5, 648,283 7,196,634 6,664,594 7,157,886 6,939, 743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
