SKM 150GB063D Absolute Maximum Ratings Symbol Conditions IGBT ()' ) )?@ (' 0B ( SEMITRANSTM 3 Superfast NPT-IGBT Modules SKM 150GB063D Features ! ! ! " " #$ % % & " ' & & %% % ()' *+ , %% -+ , ( $ ! ) ) ) % . / % 0 )1 "" " # 2) 2 ) " $ ! " " 3- " " 4+ Typical Applications ! % ! " " ! 5 1) 0 0 "0 % 6 #0 3+ 1 : 4* ;) ! % " : 4* >+ ;) : 3 C'?1C D 1) 3 & Values Units <++ 4++ 3*+ -++ A4+ E+ &&& F3*+ 34* ( 1 1 ( ;) 4*++ ( 3-+ H+ -++ 1 1 GG+ 1 Inverse diode . .?@ : 4* G+ ;) : 3 .@ : 3+ I &I B : 3*+ ;) Characteristics Symbol Conditions IGBT (' )' ()'C )' (' : ()' ) : 3 1 (' : + ()' : ()' B : 4* 34* ;) B : 4* 34* ;) (' : 3* ( B : 4* 34* ;) ()' ) : 3*+ 1 (' : 3* ( 0 ) ) ) " %! " (' : + ()' : 4* ( % : 3 @ 8 : 4* ;) ! % " min. E * typ. & : 4* 34* ;) " "%% % ()) : -++ ( ) : 3*+ 1 ? : ?%% : 3+ J B : 34* ;) (' : A 3* ( < * + E* ( 1 ( J 4 3 4 E 4 * 4 G ( 4+ . . . G E 3 + < ' '%% Units * * + 3* 3 +* 3 > G > )' ?))KF''K max. + -* + * J 3-+ <* E*+ E+ G * * * L Inverse diode (. : (') (C ??@ M . : 3*+ 1I (' : + (I B : 4* 34* ;) B : 34* ;) B : 34* ;) . : 3*+ 1I B : 34* ;) "N" : 1NO ' (' : ( 3 ** 3 ** < *G 3 3 H ( + H G ( J 1 O) L Thermal characteristics ?B ?B2 0 2" + 3G + * PN9 PN9 ? " + +-G PN9 * * -4* Mechanical data @ @ 7 @< @< ! 4 * 7 8 9 " 0 19-09-2005 RAA (c) by SEMIKRON SKM 150GB063D GB 2 19-09-2005 RAA (c) by SEMIKRON SKM 150GB063D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 19-09-2005 RAA (c) by SEMIKRON SKM 150GB063D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 4 19-09-2005 RAA (c) by SEMIKRON SKM 150GB063D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm ) 2 *< ) 2 *< This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 5 19-09-2005 RAA (c) by SEMIKRON