THYRISTOR MODULE PK(PD,PE)110FG UL;E76102 M Power Thyristor/Diode Module PK110FG series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 1600V are available. and electrically isolated mounting base make your mechanical design easy. 92 2 2 2 5 35 Internal Configurations K G 3000A 100A/s dv/dt 1000V/s di/dt IT(AV)110A, IT(RMS)172A, ITSM KG -6 Mx1 A1K2 1 K1 G1 A2 3 2 1 K2 A1K2 PK 4-TAB K1 A2 PE NAME PLATE MAX 2 K2 3 K2 G2 K2 G2 Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches K2 3 2 A1K2 1 K2 K1 G1 A2 UnitA PD Maximum Ratings Tj25 unless otherwise specified Ratings Symbol Item PK110FG40 PD110FG40 PE110FG40 PK110FG80 PD110FG80 PE110FG80 PK110FG120 PD110FG120 PE110FG120 PK110FG160 PD110FG160 PE110FG160 Ratings VRRM Repetitive Peak Reverse Voltage 400 800 1200 1600 V VRSM Non-Repetitive Peak Reverse Voltage 480 960 1300 1700 V VDRM Repetitive Peak off-state Voltage 400 800 1200 1600 V Symbol ITRMS R.M.S. On-state Current ITSM It 2 PGM PGAV Unit 110 A 172 A 2740/3000 37500 A Single phase, half wave, 180conduction, Tc81 1 2 I t Value for one cycle surge current 2 Cycle, 50/60HZ, Peak Value, non-repetitive Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current VFGM Peak Gate Voltage (Forward) VRGM Peak Gate Voltage (Reverse) di/dt VISO Critical Rate of Rise of On-state Current Tstg Ratings Surge On-state Current IFGM Tj Conditions Single phase, half wave, 180conduction, Tc81 Item ITAV Average On-state Current Isolation Breakdown VoltageR.M.S. 10 W 1 W 3 A 10 V 5 IG100mA VD12VDRM di G /dt0.1A/s 100 V A/s 2500 V Operating Junction Temperature -40 to 125 Storage Temperature Mounting Torque A.C. 1minute A2S -40 to 125 MountingM5 Recommended Value 1.5-2.515-25 2.728 TerminalM5 Recommended Value 1.5-2.515-25 2.728 Nm fB 170 g Ratings Unit Mass Typical Value Electrical Characteristics Symbol Item IDRM Conditions Repetitive Peak off-state Current,max Tj125VDVDRM 30 mA IRRM Repetitive Peak Reverse Current,max Tj125VDVDRM 30 mA VTM On-state Voltage,max IT330A 1.6 V IGT Gate Trigger Current,max VD6VIT1A 50 mA VGT Gate Trigger Voltage,max VD6VIT1A 3 V VGD Gate Non-Trigger Voltage,min Tj125VD12VDRM 0.25 V dv/dt Critical Rate of Rise of off-state Voltage,min Tj125VD23VDRM 1000 V/s Junction to case 0.25 /W Rthj-cThermal Impedance,max markThyristor and Diode part. No markThyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com http://store.iiic.cc/ PK(PD,PE)110FG Gate Characteristics On-State Voltage max PG M 10 W PG AV W On-State CurrentA VFGM10V IFGMA Gate VoltageV VGD Gate CurrentmA Surge On-State Current Rating Non-Repetitive Per One Element HZ HZ = start 1 On-State VoltageV Transient Thermal Impedance j-c/W Surge On-State CurrentA = Maximum Transient Thermal Impedance Junction to Case Per One Element Timecycles http://store.iiic.cc/ Time tsec