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MRF18085ALR3 MRF18085ALSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier
amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and
WLL applications. Specified for GSM--GSM EDGE 1805--1880 MHz.
!GSM and GSM EDGE Performance, Full Frequency Band
(1805--1880 MHz)
Power Gain -- 15 dB (Typ) @ 85 Watts CW
Efficiency -- 52% (Typ) @ 85 Watts CW
!Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW
Output Power
Features
!Internally Matched for Ease of Use
!High Gain, High Efficiency and High Linearity
!Integrated ESD Protection
!Designed for Maximum Gain and Insertion Phase Flatness
!Excellent Thermal Stability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
!Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40"# Nominal.
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --0.5, +15 Vdc
Total Device Dissipation @ TC=25$C
Derate above 25$C
PD273
1.56
W
W/$C
Storage Temperature Range Tstg -- 65 to +150 $C
Case Operating Temperature TC150 $C
Operating Junction Temperature TJ200 $C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case R%JC 0.79 $C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M3 (Minimum)
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF18085A
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
MRF18085ALR3
MRF18085ALSR3
1805--1880 MHz, 85 W, 26 V
GSM/GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF18085ALR3
CASE 465A--06, STYLE 1
NI--780S
MRF18085ALSR3
&Freescale Semiconductor, Inc., 2006, 2010.
A
ll rights reserved.
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RF Device Data
Freescale Semiconductor
MRF18085ALR3 MRF18085ALSR3
Table 4. Electrical Characteristics (TC=25$C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D= 100 "Adc)
V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current
(VDS =26Vdc,V
GS =0Vdc)
IDSS — — 10 "Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 "Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 200 "Adc)
VGS(th) 2 — 4 Vdc
Gate Quiescent Voltage
(VDS =26Vdc,I
D= 600 mAdc)
VGS(Q) 2.5 3.9 4.5 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2Adc)
VDS(on) —0.15 —Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS =26Vdc,V
GS =0,f=1MHz)
Crss —3.6 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common--Source Amplifier Power Gain @ 85 W (2)
(VDD =26Vdc,I
DQ = 800 mA, f = 1805 -- 1880 MHz)
Gps 13.5 15 —dB
Drain Efficiency @ 85 W (2)
(VDD =26Vdc,I
DQ = 800 mA, f = 1805 -- 1880 MHz)
'48 52 — %
Input Return Loss @ 85 W (2)
(VDD =26Vdc,I
DQ = 800 mA, f = 1805 -- 1880 MHz)
IRL — -- 1 2 -- 9 dB
Power Output, 1 dB Compression Point
(VDD =26Vdc,I
DQ = 800 mA, f = 1805 -- 1880 MHz)
P1dB 83 90 —Watts
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring
batch--to--batch consistency.
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MRF18085ALR3 MRF18085ALSR3
3
RF Device Data
Freescale Semiconductor
VBIAS
C1, C3, C6, C7 10 pF Chip Capacitors, ATC
C2 1.8 pF Chip Capacitor, ATC
C4 10 mF, 35 V Tantalum Capacitor, AVX
C5, C8 1 nF Chip Capacitors, ATC
C9 220 mF, 63 V Electrolytic Capacitor, Radial, Philips
C10 0.3 pF Chip Capacitor, ATC
R1, R2 10 kΩ, 1/4 W Chip Resistors (1206)
R3 1.0 kΩ, 1/4 W Chip Resistor (1206)
Z1 0.671#x 0.087#Microstrip
Z2 0.568#x 0.087#Microstrip
Z3 0.500#x 0.098#Microstrip Shorted Stub
Z4 0.610#x 00.118#Microstrip
Z5 0.331#x 1.153#Microstrip
Z6 0.063#x 1.153#Microstrip
Z7 0.122#x 0.925#Microstrip
Z8 0.547#x 0.925#Microstrip
Z9 0.394#x 0.177#Microstrip
Z10 0.180#x 0.087#Microstrip
Z11 0.686#x 0.087#Microstrip
Z12 0.294#x 0.087#Microstrip
PCB Taconic TLX8, 30 mils, (r=2.55
Figure 1. 1805--1880 MHz Test Fixture Schematic
RF
INPUT
RF
OUTPUT
Z1
C1
C3
C5
Z5
DUT
Z9 Z10 Z12
C6
R3
C9
+
Z4
R1
C4
C8
VSUPPLY
R2
+
C2
Z8
C7
Z3
Z2 C10
Z6
Z7 Z11
Figure 2. 1805--1880 MHz Test Fixture Component Layout
MRF18085A
Rev0
CUT OUT AREA
C9
Strap
C4 R1
R2
C5 C6
R3
C2
C1 C3
C7 C8
C10
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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RF Device Data
Freescale Semiconductor
MRF18085ALR3 MRF18085ALSR3
TYPICAL CHARACTERISTICS
1000
10
17
0
Pout, OUTPUT POWER (WATTS)
Figure 3. Power Gain versus Output Power
Gps, POWER GAIN (dB)
16
15
14
13
12
11
1 10 100
Pout, OUTPUT POWER (WATTS)
Figure 4. Power Gain versus Output Power
Gps, POWER GAIN (dB)
1000
9
17
1
TC=25_C
50_C
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
Gps, POWER GAIN (dB)
VDD =26Vdc
IDQ = 800 mA
f = 1840 MHz
10010
16
15
14
13
12
11
10
85_C
1900
0
120
1800
Pin =8W
f, FREQUENCY (MHz)
Figure 6. Output Power versus Frequency
Pout , OUTPUT POWER (WATTS)
VDD =26Vdc
IDQ = 800 mA
TC=25_C
4W
1W
0.5 W
100
80
60
40
20
1820 1840 1860 1880
1950
10
17
1750
-- 2 8
0
Gps @30W
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
Gps, POWER GAIN (dB)
INPUT RETURN LOSS (dB)IRL,
VDD =26Vdc
IDQ = 800 mA
TC=25_C
Gps @80W
IRL @ 80 W
IRL @ 30 W
16 --4
15 --8
14 --12
13 --16
12 --20
11 -- 24
1800 1850 1900
'
1000
10
16
0.1
0
60
Gps
Pout, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Efficiency versus
Output Power
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)'
VDD =26Vdc
IDQ = 800 mA
f = 1840 MHz
TC=25_C
15 50
14 40
13 30
12 20
11 10
1 10 100
1000
8
17
0.1
24 V
IDQ = 800 mA
f = 1840 MHz
TC=25_C
16
15
14
13
12
11
10
9
1 10 100
VDD =20V
28 V
32 V
IDQ = 1000 mA
VDD =26Vdc
f = 1840 MHz
TC=25_C
800 mA
600 mA
400 mA
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MRF18085ALR3 MRF18085ALSR3
5
RF Device Data
Freescale Semiconductor
Figure 9. Series Equivalent Source and Load Impedance
f
MHz
Zsource
)
Zload
)
1710
1785
1.13 -- j3.62
1.69 -- j4.34
1.61 -- j4.23
1.79 -- j2.88
1.82 -- j3.15
1.90 -- j2.66
VDD =26V,I
DQ = 800 mA, Pout =85WCW
Zo=10)
f = 1990 MHz
f = 1990 MHz
f = 1710 MHz
f = 1710 MHz
1805
1880 2.83 -- j5.25 2.09 -- j2.77
1930
4.39 -- j4.97
3.00 -- j5.18 2.01 -- j2.44
2.01 -- j2.571960
1990 6.59 -- j4.74 1.79 -- j2.37
Zsource
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Zload
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RF Device Data
Freescale Semiconductor
MRF18085ALR3 MRF18085ALSR3
NOTES
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MRF18085ALR3 MRF18085ALSR3
7
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465--06
ISSUE G
NI--780
MRF18085ALR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
CASE 465A--06
ISSUE H
NI--780S
MRF18085ALSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
C
E
H
F
3
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U-- -- -- 0 . 0 4 0 -- -- -- 1 . 0 2
Z-- -- -- 0 . 0 3 0 -- -- -- 0 . 7 6
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
1
2
D
K
U
(FLANGE)
4X
Z
(LID)
4X
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
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8
RF Device Data
Freescale Semiconductor
MRF18085ALR3 MRF18085ALSR3
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
6Dec. 2010 !MRF18085A Rev. 6 data sheet archived. Data sheet split due to change in part life cycle. See
MRF18085A--1 Rev. 7 for MRF18085ALR3 and MRF18085A--2 Rev. 8 for MRF18085ALSR3.
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9
RF Device Data
Freescale Semiconductor
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Document Number: MRF18085A
Rev. 6, 5/2006
