052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.5mA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Units
Volts
µA
nA
Symbol
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT33GF120B2_LRDQ2(G)
1200
±30
64
30
75
75A @ 1200V
357
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
1200
4.5 5.5 6.5
2.0 2.5 3.0
xx
100
6000
±120
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated • Ultra Low Leakage Current
• Ultrafast Soft Recovery Anti-parallel Diode
FAST IGBT & FRED
®
1200V
APT33GF120B2RDQ2 APT33GF120LRDQ2
APT33GF120B2RDQ2G* APT33GF120LRDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
E
G
(L)
(B2)
TO-264
T-Max
®
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN TYP MAX
.35
0.61
6.10
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RθJC
RθJC
WT
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 25A
TJ = 150°C, RG = 4.3Ω, VGE =
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 25A
RG = 4.3Ω
TJ = +25°C
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 25A
RG = 4.3Ω
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
MIN TYP MAX
1855
230
110
10
170
19
100
75
14
17
185
110
1315
1930
1515
14
17
220
135
1325
3325
2145
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
TYPICAL PERFORMANCE CURVES
VGS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
(NORMALIZED)
IC, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
5
4
3
2
1
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0 1 2 3 4 5 6 0 5 10 15
0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 180 200
8 10 12 14 16 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
15V
12V
11V
9V
13V
8V
7V
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
TJ = 125°C
TJ = 25°C
TJ = -55°C
TJ = 125°C
TJ = 25°C
TJ = -55°C
VGE = 15V
VCE = 960V
VCE = 600V
VCE = 240V
IC = 25A
TJ = 25°C
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 30A
I
C
= 15A
I
C
= 7.5A
I
C
= 50A
I
C
= 25A
I
C
= 12.5A
10V
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 800V
RG = 4.3Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
RG = 4.3Ω, L = 100µH, VCE = 800V
VCE = 800V
TJ = 25°C, or 125°C
RG = 4.3Ω
L = 100µH
VGE = 15V
TJ = 25 or 125°C,VGE = 15V
0 10 20 30 40 50 60 0 10 20 30 40 50 60
0 10 20 30 40 50 60 0 10 20 30 40 50 60
0 10 20 30 40 50 60 0 10 20 30 40 50 60
0 10 20 30 40 50 0 25 50 75 100 125
RG = 4.3Ω, L = 100µH, VCE = 800V
20
15
10
5
0
70
60
50
40
30
20
10
0
10,000
8,000
6,000
4,000
2,000
0
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
4,000
3,500
3,000
2,500
2,000
1,500
1,000
500
0
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
VCE = 800V
VGE = +15V
RG = 4.3Ω
TJ
=
125°C
TJ
=
25°C
VCE = 800V
VGE = +15V
RG = 4.3Ω
TJ = 125°C
TJ = 25°C
Eon2,50A
Eoff,50A Eon2,25A
Eoff,25A
Eon2,12.5A
Eoff,12.5A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
V
CE
= 800V
V
GE
= +15V
R
G
= 4.3Ω
Eon2,50A
Eoff,50A
Eon2,25A
Eoff,25A
Eon2,12.5A
Eoff,12.5A
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
TYPICAL PERFORMANCE CURVES
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5 10-4 10-3 10-2 10-1 1.0
3,000
1,000
500
100
50
10
80
70
60
50
40
30
20
10
0
C, CAPACITANCE (PF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 30 35 40 45 50
FMAX, OPERATING FREQUENCY (kHz)
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 4.3Ω
100
50
10
5
0
0.5
0.1
0.05
Fmax = min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + Eoff
fmax2 =
Pdiss = TJ - TC
RθJC
Cres
Cies
Coes
D = 0.9
0.7
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
0.125
0.225
0.0138
0.148
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
TJ = 125°C
Switching Energy
5%
10%
td(on)
90%
10%
tr
5%
TJ = 125°C
Switching Energy
0
90%
td(off)
10%
tf
90%
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT40DQ120
Collector Current
Collector Voltage
Gate Voltage
Collector Voltage
Collector Current
Gate Voltage
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 112°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Symbol
IF(AV)
IF(RMS)
IFSM
Symbol
VF
Characteristic / Test Conditions
IF = 25A
Forward Voltage IF = 50A
IF = 25A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN TYP MAX
2.46
2.95
1.83
APT33GF120B2_LRDQ2(G)
40
63
210
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN TYP MAX
- 26
- 350
- 570
- 4 -
- 430
- 2200
- 9 -
- 210
- 3400
- 29
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
IF = 40A, diF/dt = -200A/µs
VR = 800V, TC = 25°C
IF = 40A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
IF = 40A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
ZθJC, THERMAL IMPEDANCE (°C/W)
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.3
0.7
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
D = 0.9
0.0442
0.242
0.324
0.00222
0.00586
0.0596
Power
(watts)
Junction
temp (°C)
RC MODEL
Case temperature (°C)
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
TJ = 125°C
VR = 800V
20A
40A
80A
600
500
400
300
200
100
0
35
30
25
20
15
10
5
0
Duty cycle = 0.5
TJ = 175°C
80
70
60
50
40
30
20
10
0
CJ, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/µs)
IF(AV) (A)
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature Figure 30. Maximum Average Forward Current vs. CaseTemperature
VR, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 25. Forward Current vs. Forward Voltage Figure 26. Reverse Recovery Time vs. Current Rate of Change
-diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change Figure 28. Reverse Recovery Current vs. Current Rate of Change
Qrr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT
(nC) (A)
IRRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME
(A) (ns)
TJ = 175°C
TJ = -55°C
TJ = 25°C
TJ = 125°C
0 1 2 3 4 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
TJ = 125°C
VR = 800V
80A
20A
40A
120
100
80
60
40
20
0
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
TJ = 125°C
VR = 800V 80A
40A
20A
trr
Qrr
Qrr
trr
IRRM
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
150
100
50
0
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
052-6280 Rev A 11-2005
APT33GF120B2_LRDQ2(G)
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30µH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT10035BLL
Dimensions in Millimeters and (Inches)
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
e1 SAC: Tin, Silver, Copper
T-MAX® (B2) Package Outline
e1 SAC: Tin, Silver, Copper
TO-264 (L) Package Outline
