BFQ19S NPN Silicon RF Transistor 1 For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFQ19S FG Pin Configuration 1=B 2=C Package 3=E SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 75 Base current IB 10 Total power dissipation Ptot 1 W C Value Unit V mA TS 85 C 1) Junction temperature Tj 150 Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS 65 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-22-2001 BFQ19S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 10 A hFE 40 100 220 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V 2 Jun-22-2001 BFQ19S Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT 4 5.5 - Ccb - 1 1.5 Cce - 0.4 - Ceb - 4.4 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2.5 - f = 1.8 GHz - 4 - IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 11.5 - f = 1.8 GHz - 7 - - 9.5 - - 4 - - 35 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz Third order intercept point IP3 dBm IC = 70 mA, VCE = 8 V, ZS =ZSopt , ZL =ZLopt , f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2) 3 Jun-22-2001 BFQ19S Total power dissipation Ptot = f (TS ) 1200 mW 1000 P tot 900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jun-22-2001 Package SOT89 Package Outline B 1.5 0.1 1) 0.2 MAX. 2 3 1.5 0.35 0.1 0.45 +0.2 -0.1 3 1) 1.6 0.2 1 0.2 1 0.15 4 0.25 1 0.1 1) 2.5 0.1 +0.2 acc. to DIN 6784 10 MAX. 0.25 0.05 2.75 +0.1 -0.15 4.5 0.1 45 0.15 M B 3x 0.2 B Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout Type code BAW78D Pin 1 Date code (Year/Month) 2003, July Manufacturer Example Packing Code E6327: Reel o180 mm = 1.000 Pieces/Reel Code E6433: Reel o330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 1.6 Impressum Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.