V
RRM
= 800 V - 1200 V
I
F
= 16 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Re
etitive
eak reverse volta
eV
RRM
V
• Types from 800 V to 1200 V V
RRM
Silicon Standard
Recover
Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
800 1200
Conditions S16K (R) S16M (R) S16Q (R)
1000
S16K thru S16QR
2. Reverse polarity (R): Stud is anode.
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
2.50
16 16 16
370 370 370
840
1200
1.1 1.1
-55 to 150
12
1000800
10
S16Q (R)
1.1
10 10
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
S16K (R)
2.50 2.50
V
R
= 50 V, T
j
= 175 °C 12 12
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 140 °C
Conditions
700560
S16M (R)
V
R
= 50 V, T
j
= 25 °C
I
F
= 16 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1