MITSUBISHI! Nch POWER MOSFET FS10VS-6 HIGH-SPEED SWITCHING USE FS10VS-6 OUTLINE DRAWING Dimensions in mm @ *\ . 10.5MAX. ms 45 Bi ON ait, re) 8 as 3 gis . - GATE 2 DRAIN 3 SOURCE @VOSS cece reece teense eeeveee ts eeneeteeavenee 300V 4 DRAIN @ PDS (QN) (MAX) citer etree treet eee tere eee eens 0.680 WD ccc eee cet teen center e erecta 10A TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Voss Drain-source Vas = 0V Vass Gate-source VbDSs = OV io Drain current 10 lpm Drain current 30 Po Maximum 90 Ten Channel -55 ~ +150 T 55 ~ +150 1.2 2-106 MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FS10VS-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tech = 25C) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. V (aR) Oss | Drain-source breakdown voltage | ID = 1mA, Vas = OV 300 _ _ Vv V (8h) GSs_| Gate-source breakdown voltage | IG = +100A, VDS = OV +30 _ Vv IGss Gate leakage current VGS = +25V, VOs = OV _ +10 HA Ipss Drain current Vos = 300V, VGs = 0V _ 1 mA VGS (th) Gate-source threshold voltage ID = mA, Vos = 10V 2 3 4 Vv rOS (ON) _| Drain-source on-state resistance | 1D = 5A, Vas = 10V _ 0.52 0.68 Q VDS (ON) | Drain-source on-state voltage | 1D = 5A, VGs = 10V _ 2.6 3.4 Vv yfs Forward transfer admittance ip = 5A, Vos = 10V. 4.0 6.0 _ S$ Ciss Input capacitance _ 570 = pF Coss Output capacitance VDS = 25V, VGS = OV, f= IMHz _ 110 ~ pF Crss Reverse transfer capacitance _ 20 = pF td (on) Turn-on delay time _ 17 _ ns tr Rise time ~ 25 _ ns - VoD = 150V, Ip = 5A, Vas = 10V, RGEN = Ras = 50Q te (off) Turn-off delay time _ 60 _ ns tt Fait time > 30 _ ns Vsp Source-drain voltage Is = 5A, VGS = OV ~ 15 2.0 Vv Rh (ch-c)_ | Thermal resistance Channel to case _ _ 1.39 CAW PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 7 5 = 3 S80 z ? a a 10! z = 7 Qo 60 BS = i 3 A 2 a 40 a 109 an z 5 fam =< 3 bid = 20 G 2tte=25c : Pulse 10-1 g % 50 700 150 200 235710' 23 57102 23 57103 2 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL} Ves = 20V VGS = 20V 20 10 10V Po= 10v C= 25C SOW Pulse Test * =< 416 SWaebetesestos= <= 8 a - NV g k b 6 q a c xc 3 8 ao 4 Zz Zz BV & a 4 G 2 Te = 28C Test 0 a 0 70 #20 30 40 ~~ 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SQURCE VOLTAGE Vos (V) MITSUBISHI 2 ~ 107 ELECTRICMITSUBISHI Nch POWER MOSFET FS10VS-6 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE ORAIN CURRENT (TYPICAL) (TYPICAL) ut To = 25C Te = 25C = lu 7 Pulse Test w T Vas = 10V <S zo os % " Zo Zo Bs oe f fo Dw i) ag 52 H = Oe Za 22 => ey i a a 5A 0 0 4 8 12 16 20 107 23 5710923 5710' 23 57702 GATE-SOUACE VOLTAGE Vas (V) ORAIN CURRENT tp (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 10! Tc = 25C 7 Vos = 50V 5 < Pulse Test a 2 n= 3 z=? ii uw ine FO 190 a az 3 ee S SE 5 < ca 5 rat Vos = 10V 0 10-1 Pulse Test 0 4 8 12 16 20 10 2 3 #577101 23 57108 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A} CAPACITANCE VS. DRAIN-SOURCE VOLTAGE : SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 2 108 7 Toh = 25C 103 VdD = 150V 7 _ 8 VGs = 10V ~ 5 2 RGEN = RGS = 500 i = 3 w & 3 Ww 2 28 ? 2 Oo e 5 g 102 om 102 2 ? Zz io = 7 zo 8 55 Og 3h Tch = 25C Ee o 2 f= 1IMHz = 3 :S = OV wo 10! 2 7? 5 10 . 23 6710923 5710123 5710223 10 2 3 5 7:10! 23 7 102 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT Ib (A) 2-108 MITSUBISHI ELECTRICGATE-SOURCE VOLTAGE Vas (V) DRAIN-SQURCE ON-STATE RESISTANCE rb$ (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE 10S (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8h) oss (t?C) DRAIN-SOURCE BREAKDOWN VOLTAGE _V (en) 0ss (25C) MITSUBISHI Nch POWER MOSFET FS10VS-6 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE VS.GATE CHARGE FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) 40 Toh = 25C VGs = OV ip= 710A Pulse Test = Vps = 50V @ 32 1 ai | (24 c a 3 wy tS oO x 3 9 8 0 0 0 8 16 24 32 40 0 0.8 4.6 2.4 3.2 40 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE Vsp (V) ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE CHANNEL TEMPERATURE (TYPICAL) (TYPICAL) 5.0 Ves = 10V VDS = 10V ip = /21D Q lo = 1mA Puise Test O~ 40 Le n= Wwe TZ 30 ui > i EQ 20 Or WH we E> 10 E . oO 0 ~50 a 50 100 150 -50 0 50 100 =6150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE. Tch (C) NO Pulse 10 G4 -2 -50 9 50 100 150 10423 5710323 5710223 6710123 5710923 5710'23 57102 PULSE WIDTH tw (8) BREAKDOWN VOLTAGE VS. = CHANNEL TEMPERATURE = TRANSIENT THERMAL IMPEDANCE (TYPICAL) ye CHARACTERISTICS Ss 10! Vas = OV 5 2 Ip = IMA N 3 w 2FD=1 2 1090 Z 7 # ES = 3 Z 1091 z 7 & 5 x ome E z uu wo z x oc & CHANNEL TEMPERATURE Teh (C) MITSUBISHI 2- 109 ELECTRIC