SFH 4510
SFH 4515
GaAs-IR-Lumineszenzdio den (950 nm) in SMR® Gehäuse
GaAs Infrared Emitters (950 nm) in SMR® Package
SFH 4510 SFH 4515
2001-04-18 1
Wesentliche Merkmale
• GaAs-LED mit sehr hohem Wirkungsgrad
•SMR
® (Surface Mount Radial) Gehäuse
• Für Oberflächenmontage geeignet
• Gegurtet lieferbar
• Gehäusegleich mit Fotodiode SFH 2500/
SFH 2505
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• UL-Freigabe
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• Sensorik
• Diskrete Lichtschranken
• Diskrete Optokoppler
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 4510 Q62702-P1798 5-mm-SMR®-Gehäuse (T 1 3/4), schwarzes Epoxy-
Gießharz, Ansc hlüsse (SFH 4510 gebogen, SFH 4515 gerade)
im 2.54-mm-Raster (1/10’’), Kathodenkennzeichnung: siehe
Maßzeichnung.
5 mm SMR® package (T 1 3/4), black-colored epoxy resin, solder
tabs (SFH 4510 bent, SFH 4515 straight) lead spacing 2.54 mm
(1/10’’), cathode marking: see package outline.
SFH 4515 Q62702-P1821
Features
• Very highly efficient GaAs-LED
•SMR
® (Surface Mount Radial) package
• Suitable for surface mounting (SMT)
• Available on tape and reel
• Same package as photodiode SFH 2500/
SFH 2505
• High reliability
• Spectral match with silicon photodetectors
• UL-approval
Applications
• IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
• Remote control for ste ady and varying intensity
• Sensor technology
• Discrete interrupters
• Discrete optocouplers
2001-04-18 2
SFH 4510, SFH 4515
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR5V
Durchlaßstrom
Forward current IF (DC) 100 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current IFSM 3A
Verlustleistung
Power dissipation Ptot 150 mW
Wärmewiderstand Sperrschic ht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 20 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 20 mm2 each
RthJA 300 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
λpeak 950 nm
Spektrale Bandbreite bei 50% von Ιmax
Spectral bandwidth at 50% of Ιmax
IF = 100 mA
∆λ 55 nm
Abstrahlwinkel
Half angle ϕ± 14 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L×B
L×W0.3 ×0.3 mm
Schaltzeiten, Ie von 10% au f 90% und v on 90% auf
10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from 90 %
to 10%, IF = 100 mA, RL = 50 Ω
tr, tf0.5 µs
SFH 4510, SFH 4515
2001-04-18 3
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co25 pF
Durchlaßspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.30 (≤ 1.5)
2.30 (≤ 2.8) V
V
Sperrstrom,
Reverse current
VR = 5 V
IR0.01 (≤ 1) µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe22 mW
Temperaturkoeffizient von Ie bzw. Φe, IF = 100 mA
Temperature coefficient of Ie or Φe, IF = 100 mA TCI– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 2mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ0.3 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2001-04-18 4
SFH 4510, SFH 4515
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.001 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.001 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie typ
Ie min
50
≥ 25 mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ 450 mW/sr
SFH 4510, SFH 4515
2001-04-18 5
Relati ve Sp ectral Emission
Irel = f (λ)
Forward Cu rrent
IF = f (VF), single puls e, tp = 20 µs
Radiation Characteristics Ιrel = f (ϕ)
OHRD1938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
10
OHR01554
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
OHF00265
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Ha ndl i ng
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
Ιe
Ιe 100 mA = f (IF)
OHR01551
10
-3
Ι
F
-2
10
10
-1
10
0
10
1
10
2
Ι
e 100 mA
e
Ι
-2
10
-1
10
0
10
1
10A
A
t
OHR00860
p
-5
10
10 2
Ι
F
10 3
10 4
5
DC
0.2
0.5
0.1
0.005
0.01
0.02
0.05
tp
T
Ι
F
tp
T
D=
5
mA
-4
10 -3
10 -2
10 -1
10 0
10 1
10 2
10s
D=
Max. Permissible Forward Current
IF = f (TA)
OHF01534
0
I
F
T
0
25
50
75
100
125
mA
10 20 30 40 50 60 70 80 ˚C 100
2001-04-18 6
SFH 4510, SFH 4515
Maßzeichnung
Package Outlines
Maße we rden wie folgt ange geben: mm (inch) / Di m ensions are spe cified as follows: mm (inc h).
SFH 4510
GEOY6968
3.9 (0.154)
4.5 (0.177)
Cathode/
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
13.1 (0.516)
14.7 (0.579)
5.5 (0.217)
7.5 (0.295)
1.95 (0.077)
2.05 (0.081)
R((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
(-0.004...0.008)
3.7 (0.146)
3.3 (0.130)
2.8 (0.110)
2.4 (0.094)
4.5 (0.177)
3.9 (0.154)
Chip position
Collector
-0.1...0.2
GEOY6960
3.9 (0.154)
4.5 (0.177)
Cathode
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
13.1 (0.516)
14.7 (0.579)
5.5 (0.217)
7.5 (0.295)
1.95 (0.077)
2.05 (0.081)
R((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
(-0.004...0.004)
3.7 (0.146)
3.3 (0.130)
2.7 (0.106)
2.3 (0.091)
Chip position
3.9 (0.154)
4.5 (0.177)
-0.1...0.1
SFH 4515
SFH 4510, SFH 4515
2001-04-18 7
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touc h with your nearest sale s office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
