1
FEATURES APPLICATIONS
SC-70 (DCU) PACKAGE
(TOP VIEW)
1
2
3
8
7
6
NO0
NO1
NO2 IN1
COM
V+
TS5A3357
4GND 5 IN2
Logic
Control
DESCRIPTION/ORDERING INFORMATION
TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007www.ti.com
•Cell Phones•Specified Break-Before-Make Switching
•PDAs•Low ON-State Resistance
•Portable Instrumentation•High Bandwidth
•Control Inputs Are 5.5-V Tolerant•Low Charge Injection•Excellent ON-State Resistance Matching•Low Total Harmonic Distortion (THD)•1.65-V to 5.5-V Single-Supply Operation•Latch-Up Performance Exceeds 100 mA PerJESD 78, Class II•ESD Performance Tested Per JESD 22– 2000-V Human-Body Model(A114-B, Class II)– 1000-V Charged-Device Model (C101)
FUNCTION TABLE
IN1 IN2 COM TO NO0 COM TO NO1 COM TO NO2
L L OFF OFF OFFH L ON OFF OFFL H OFF ON OFFH H OFF OFF ON
Summary of Characteristics
(1)
Triple 3:1 Multiplexer/The TS5A3357 is a high-performance, single-pole
Configuration Demultiplexertriple throw (SP3T) analog switch that is designed to
(1 ×SP3T)operate from 1.65 V to 5.5 V. The device offers a low
Number of channels 1ON-state resistance and low input/output capacitance
ON-state resistance (r
on
) 5 Ωand, thus, causes a very low signal distortion. The
ON-state resistance match ( Δr
on
) 0.1 Ωbreak-before-make feature allows transferring of asignal from one port to another, with a minimal signal
ON-state resistance flatness (r
on(flat)
) 6.5 Ωdistortion. This device also offers a low charge
Turn-on/turn-off time (t
ON
/t
OFF
) 6.5 ns/3.7 nsinjection which makes this device suitable for
Break-before-make time (t
BBM
) 0.5 nshigh-performance audio and data acquisition
Charge injection (Q
C
) 3.4 pCsystems.
Bandwidth (BW) 334 MHzOFF isolation (O
ISO
) – 82 dB at 10 MHzCrosstalk (X
TALK
) – 62 dB at 10 MHzTotal harmonic distortion (THD) 0.05%Leakage current (I
COM(OFF)
) ± 1 µAPackage option 8-pin DCU (US8)
(1) V
+
= 5 V, T
A
= 25 °C
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2004 – 2007, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
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ABSOLUTE MINIMUM AND MAXIMUM RATINGS
(1) (2)
PACKAGE THERMAL IMPEDANCE
TS5A3357
SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
ORDERING INFORMATION
T
A
PACKAGE
(1) (2)
ORDERABLE PART NUMBER TOP-SIDE MARKING
(3)
– 40 °C to 85 °C SOT (SC-70) – DCU Tape and reel TS5A3357DCUR JA9_
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging .(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .(3) DCU: The actual top-side marking has one additional character that designates the assembly/test site.
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
+
Supply voltage range
(3)
– 0.5 6.5 VV
NO
Analog voltage range
(3) (4) (5)
– 0.5 V
+
+ 0.5 VV
COM
I
K
Analog port diode current V
NO
, V
COM
< 0 or V
NO
, V
COM
> V
+
– 50 50 mAI
NO
On-state switch current V
NO
, V
COM
= 0 to V
+
– 100 100 mAI
COM
V
I
Digital input voltage range
(3) (4)
– 0.5 6.5 VI
IK
Digital input clamp current V
I
< 0 – 50 mAI
+
Continuous current through V
+
100 mAI
GND
Continuous current through GND – 100 100 mAT
stg
Storage temperature range – 65 150 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods maydegrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyondthose specified is not implied.(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.(3) All voltages are with respect to ground, unless otherwise specified.(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.(5) This value is limited to 5.5 V maximum.
MAX UNIT
θ
JA
Package thermal impedance
(1)
165 °C/W
(1) The package thermal impedance is calculated in accordance with JESD 51-7.
2Submit Documentation Feedback Copyright © 2004 – 2007, Texas Instruments Incorporated
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ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY
(1)
TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
V
+
= 4.5 V to 5.5 V, T
A
= – 40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal range V
COM
, V
NO
0 V
+
V0≤V
NO
≤V
+
, Switch ON,Peak ON resistance r
peak
Full 4.5 V 15 ΩI
COM
= – 30 mA, See Figure 13V
NO
= 0, 25 °C 5 7I
COM
= 30 mA
Full 7V
NO
= 2.4 V, 25 °C 6 12Switch ON,ON-state resistance r
on
4.5 V ΩI
COM
= – 30 mA
See Figure 13
Full 12V
NO
= 4.5 V, 25 °C 7 15I
COM
= – 30 mA
Full 15ON-state resistance
V
NO
= 3.15 V, Switch ON,match between Δr
on
25 °C 4.5 V 0.1 ΩI
COM
= – 30 mA, See Figure 13channels
ON-state 0 ≤V
NO
≤V
+
, Switch ON,r
on(flat)
25 °C 5 V 6.5 Ωresistance flatness I
COM
= – 30 mA, See Figure 13
25 °C – 0.1 0.1NO V
NO
= 0 to V
+
, Switch OFF,I
NO(OFF)
5.5 V µAOFF leakage current V
COM
= V
+
to 0 See Figure 14
Full – 1 125 °C – 0.1 0.1COM V
COM
= 0 to V
+
, Switch OFF,I
COM(OFF)
0µAOFF leakage current V
NO
= V
+
to 0, See Figure 14
Full – 1 125 °C – 0.1 0.1NO V
NO
= 0 to V
+
, Switch ON,I
NO(ON)
5.5 V µAON leakage current V
COM
= Open, See Figure 14
Full – 1 125 °C – 0.1 0.1COM V
NO
= Open, Switch ON,I
COM(ON)
5.5 V µAON leakage current V
COM
= 0 to V
+
, See Figure 14
Full – 1 1
Digital Control Inputs (IN1, IN2)
(2)
Input logic high V
IH
Full V
+
×0.7 5.5 VInput logic low V
IL
Full 0 V
+
×0.3 V25 °C 0.1Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 5.5 V µAcurrent
Full 1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2004 – 2007, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TS5A3357
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TS5A3357
SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)V
+
= 4.5 V to 5.5 V, T
A
= – 40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 °C 5 V 1.5 6.5V
NO
= V
+
or GND, C
L
= 50 pF,Turn-on time t
ON
nsR
L
= 500 Ω, See Figure 16
Full 4.5 V to 5.5 V 1.5 725 °C 5 V 0.8 3.7V
NO
= V
+
or GND, C
L
= 50 pF,Turn-off time t
OFF
nsR
L
= 500 Ω, See Figure 16
Full 4.5 V to 5.5 V 0.8 725 °C 5 V 0.5Break-before- V
NO
= V
+
, C
L
= 50 pF,t
BBM
nsmake time R
L
= 50 Ω, See Figure 17
Full 4.5 V to 5.5 V 0.5Charge V
GEN
= 0,Q
C
See Figure 21 25 °C 5 V 3.4 pCinjection C
L
= 0.1 nF,NO V
NO
= V
+
or GND,C
NO(OFF)
See Figure 15 25 °C 5 V 4.5 pFOFF capacitance Switch OFF,COM V
NO
= V
+
or GND,C
COM(OFF)
See Figure 15 25 °C 5 V 10.5 pFOFF capacitance Switch OFF,NO V
NO
= V
+
or GND,C
NO(ON)
See Figure 15 25 °C 5 V 17 pFON capacitance Switch ON,V
COM
= V
+
orCOM
C
COM(ON)
GND, See Figure 15 25 °C 5 V 17 pFON capacitance
Switch ON,Digital input
C
I
V
I
= V
+
or GND, See Figure 15 25 °C 5 V 3 pFcapacitance
R
L
= 50 Ω,Bandwidth BW See Figure 18 25 °C 4.5 V to 5.5 V 334 MHzSwitch ON,R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 °C 4.5 V to 5.5 V – 82 dBf = 10 MHz, See Figure 19R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 °C 4.5 V to 5.5 V – 62 dBf = 10 MHz, See Figure 20
Supply
25 °C 1Positive supply Switch ON orI
+
V
I
= V
+
or GND, 5.5 V µAcurrent OFF
Full 10
4Submit Documentation Feedback Copyright © 2004 – 2007, Texas Instruments Incorporated
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY
(1)
TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
V
+
= 3 V to 3.6 V, T
A
= – 40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal range V
COM
, V
NO
0 V
+
V0≤V
NO
≤V
+
, Switch ON,Peak ON resistance r
peak
Full 3 V 25 ΩI
COM
= – 24 mA, See Figure 13V
NO
= 0 V, 25 °C 6.5 9I
COM
= 24 mA
Full 9Switch ON,ON-state resistance r
on
3 V ΩSee Figure 13V
NO
= 3 V, 25 °C 9 20I
COM
= – 24 mA
Full 20ON-state resistance
V
NO
= 2.1 V, Switch ON,match between Δr
on
25 °C 3 V 0.1 ΩI
COM
= – 24 mA, See Figure 13channels
ON-state 0 ≤V
NO
≤V
+
, Switch ON,r
on(flat)
25 °C 3.3 V 13.5 Ωresistance flatness I
COM
= – 24 mA, See Figure 13
25 °C – 0.1 0.1NO V
NO
= 0 to V
+
, Switch OFF,I
NO(OFF)
3.6 V µAOFF leakage current V
COM
= V
+
to 0 See Figure 14
Full – 1 125 °C – 0.1 0.1COM V
COM
= 0 to V
+
, Switch OFF,I
COM(OFF)
3.6 V µAOFF leakage current V
NO
= V
+
to 0, See Figure 14
Full – 1 125 °C – 0.1 0.1NO V
NO
= 0 to V
+
, Switch ON,I
NO(ON)
3.6 V µAON leakage current V
COM
= V
+
to 0, See Figure 14
Full – 1 125 °C – 0.1 0.1COM V
NO
= Open, Switch ON,I
COM(ON)
3.6 V µAON leakage current V
COM
= 0 to V
+
, See Figure 14
Full – 1 1
Digital Control Inputs (IN1, IN2)
(2)
Input logic high V
IH
Full V
+
×0.7 5.5 VInput logic low V
IL
Full 0 V
+
×0.3 V25 °C – 1 0.1Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 3.6 V µAcurrent
Full 1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2004 – 2007, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): TS5A3357
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TS5A3357
SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)V
+
= 3 V to 3.6 V, T
A
= – 40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
V
NO
= V
+
or 25 °C 3.3 V 2 9.5C
L
= 50 pF,Turn-on time t
ON
GND, nsSee Figure 16
Full 3 V to 3.6 V 2 11R
L
= 500 Ω,V
NO
= V
+
or 25 °C 3.3 V 1.3 5.1C
L
= 50 pF,Turn-off time t
OFF
GND, nsSee Figure 16
Full 3 V to 3.6 V 1.5 5.5R
L
= 500 Ω,
25 °C 3.3 V 0.5Break-before- V
NO
= V
+
, C
L
= 50 pF,t
BBM
nsmake time R
L
= 50 Ω, See Figure 17
Full 3 V to 3.6 V 0.5Charge V
GEN
= 0,Q
C
See Figure 21 25 °C 3.3 V 1.75 pCinjection C
L
= 0.1 nF,V
NO
= V
+
orNO
C
NO(OFF)
GND, See Figure 15 25 °C 3.3 V 4.5 pFOFF capacitance
Switch OFF,V
NO
= V
+
orCOM
C
COM(OFF)
GND, See Figure 15 25 °C 3.3 V 10.5 pFOFF capacitance
Switch OFF,V
NO
= V
+
orNO
C
NO(ON)
GND, See Figure 15 25 °C 3.3 V 17 pFON capacitance
Switch ON,V
COM
= V
+
orCOM
C
COM(ON)
GND, See Figure 15 25 °C 3.3 V 17 pFON capacitance
Switch ON,Digital input
C
I
V
I
= V
+
or GND, See Figure 15 25 °C 3.3 V 3 pFcapacitance
R
L
= 50 Ω,Bandwidth BW See Figure 18 25 °C 3 V to 3.6 V 327 MHzSwitch ON,R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 °C 3 V to 3.6 V – 82 dBf = 10 MHz, See Figure 19R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 °C 3 V to 3.6 V – 62 dBf = 10 MHz, See Figure 20
Supply
25 °C 1Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 3.6 V µAcurrent
Full 10
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY
(1)
TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
V
+
= 2.3 V to 2.7 V, T
A
= – 40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal
V
COM
, V
NO
0 V
+
Vrange
Peak ON 0 ≤V
NO
≤V
+
, Switch ON,r
peak
Full 2.3 V 50 Ωresistance I
COM
= – 8 mA, See Figure 13V
NO
= 0 V, 25 °C 8 12I
COM
= 8 mA
Full 12ON-state Switch ON,r
on
2.3 V Ωresistance See Figure 13V
NO
= 2.3 V, 25 °C 11 30I
COM
= – 8 mA
Full 30ON-state
resistance V
NO
= 1.8 V, Switch ON,Δr
on
25 °C 2.3 V 0.3 Ωmatch between I
COM
= – 8 mA, See Figure 13channels
ON-state 0 ≤V
NO
≤V
+
, Switch ON,r
on(flat)
25 °C 2.5 V 39 Ωresistance flatness I
COM
= – 8 mA, See Figure 13NO 25 °C – 0.1 0.1V
NO
= 0 to V
+
, Switch OFF,OFF leakage I
NO(OFF)
2.7 V µAV
COM
= V
+
to 0 See Figure 14
Full – 1 1current
COM 25 °C – 0.1 0.1V
COM
= 0 to V
+
, Switch OFF,OFF leakage I
COM(OFF)
2.7 V µAV
NO
= V
+
to 0, See Figure 14
Full – 1 1current
NO 25 °C – 0.1 0.1V
NO
= 0 to V
+
, Switch ON,ON leakage I
NO(ON)
2.7 V µAV
COM
= V
+
to 0, See Figure 14
Full – 1 1current
COM 25 °C – 0.1 0.1V
NO
= Open, Switch ON,ON leakage I
COM(ON)
2.7 V µAV
COM
= 0 to V
+
, See Figure 14
Full – 1 1current
Digital Control Inputs (IN1, IN2)
(2)
Input logic high V
IH
Full V
+
×0.75 5.5 VInput logic low V
IL
Full 0 V
+
×0.25 V25 °C 0.1Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 2.7 V µAcurrent
Full 1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2004 – 2007, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s): TS5A3357
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TS5A3357
SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)V
+
= 2.3 V to 2.7 V, T
A
= – 40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
V
NO
= V
+
or 25 °C 2.5 V 3 15C
L
= 50 pF,Turn-on time t
ON
GND, nsSee Figure 16
Full 2.3 V to 2.7 V 3 16.5R
L
= 500 Ω,V
NO
= V
+
or 25 °C 2.5 V 2 7.2C
L
= 50 pF,Turn-off time t
OFF
GND, nsSee Figure 16
Full 2.3 V to 2.7 V 2 7.8R
L
= 500 Ω,
25 °C 2.5 V 0.5Break-before- V
NO
= V
+
, C
L
= 50 pF,t
BBM
nsmake time R
L
= 50 Ω, See Figure 17
Full 2.3 V to 2.7 V 0.5Charge V
GEN
= 0,Q
C
See Figure 21 25 °C 2.5 V 1.15 pCinjection C
L
= 0.1 nF,V
NO
= V
+
orNO
C
NO(OFF)
GND, See Figure 15 25 °C 2.5 V 4.5 pFOFF capacitance
Switch OFF,V
NO
= V
+
orCOM
C
COM(OFF)
GND, See Figure 15 25 °C 2.5 V 10.5 pFOFF capacitance
Switch OFF,V
NO
= V
+
orNO
C
NO(ON)
GND, See Figure 15 25 °C 2.5 V 17 pFON capacitance
Switch ON,V
COM
= V
+
orCOM
C
COM(ON)
GND, See Figure 15 25 °C 2.5 V 17 pFON capacitance
Switch ON,Digital input
C
I
V
I
= V
+
or GND, See Figure 15 25 °C 2.5 V 3 pFcapacitance
R
L
= 50 Ω,Bandwidth BW See Figure 18 25 °C 2.3 V to 2.7 V 320 MHzSwitch ON,R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 °C 2.3 V to 2.7 V – 81 dBf = 10 MHz, See Figure 19R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 °C 2.3 V to 2.7 V – 61 dBf = 10 MHz, See Figure 20
Supply
25 °C 1Positive supply Switch ON orI
+
V
I
= V
+
or GND, 2.7 V µAcurrent OFF
Full 10
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY
(1)
TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
V
+
= 1.65 V to 1.95 V, T
A
= – 40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal
V
COM
, V
NO
0 V
+
Vrange
Peak ON 0 ≤V
NO
≤V
+
, Switch ON,r
peak
Full 1.65 V 150 Ωresistance I
COM
= – 4 mA, See Figure 13V
NO
= 0 V, 25 °C 10 20I
COM
= 4 mA
Full 20ON-state Switch ON,r
on
1.65 V Ωresistance See Figure 13V
NO
= 1.8 V, 25 °C 17 50I
COM
= – 4 mA
Full 50ON-state
resistance V
NO
= 1.15 V, Switch ON,Δr
on
25 °C 1.65 V 0.3 Ωmatch between I
COM
= – 4 mA, See Figure 13channels
ON-state 0 ≤V
NO
≤V
+
, Switch ON,r
on(flat)
25 °C 1.8 V 140 Ωresistance flatness I
COM
= – 4 mA, See Figure 13NO 25 °C – 0.1 0.1V
NO
= 0 to V
+
, Switch OFF,OFF leakage I
NO(OFF)
1.95 V µAV
COM
= V
+
to 0 See Figure 14
Full – 1 1current
COM 25 °C – 0.1 0.1V
COM
= 0 to V
+
, Switch OFF,OFF leakage I
COM(OFF)
1.95 V µAV
NO
= V
+
to 0, See Figure 14
Full – 1 1current
NO 25 °C – 0.1 0.1V
NO
= 0 to V
+
, Switch ON,ON leakage I
NO(ON)
1.95 V µAV
COM
= V
+
to 0, See Figure 14
Full – 1 1current
COM 25 °C – 0.1 0.1V
NO
= Open, Switch ON,ON leakage I
COM(ON)
1.95 V µAV
COM
= 0 to V
+
, See Figure 14
Full – 1 1current
Digital Control Inputs (IN1, IN2)
(2)
Input logic high V
IH
Full V
+
×0.75 5.5 VInput logic low V
IL
Full 0 V
+
×0.25 V25 °C 0.1Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 1.95 V µAcurrent
Full 1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2004 – 2007, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TS5A3357
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TS5A3357
SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)V
+
= 1.65 V to 1.95 V, T
A
= – 40 °C to 85 °C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 °C 1.8 V 5 32V
NO
= V
+
or GND, C
L
= 50 pF,Turn-on time t
ON
ns1.65 V toR
L
= 500 Ω, See Figure 16
Full 5 341.95 V25 °C 1.8 V 3 14V
NO
= V
+
or GND, C
L
= 50 pF,Turn-off time t
OFF
ns1.65 V toR
L
= 500 Ω, See Figure 16
Full 3 14.51.95 V25 °C 1.8 V 0.5Break-before- V
NO
= V
+
, C
L
= 50 pF,t
BBM
ns1.65 V tomake time R
L
= 50 Ω, See Figure 17
Full 0.51.95 VCharge V
GEN
= 0,Q
C
See Figure 21 25 °C 1.8 V 0.3 pCinjection C
L
= 0.1 nF,NO V
NO
= V
+
or GND,C
NO(OFF)
See Figure 15 25 °C 1.8 V 4.5 pFOFF capacitance Switch OFF,COM V
NO
= V
+
or GND,C
COM(OFF)
See Figure 15 25 °C 1.8 V 10.5 pFOFF capacitance Switch OFF,NO V
NO
= V
+
or GND,C
NO(ON)
See Figure 15 25 °C 1.8 V 17 pFON capacitance Switch ON,COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 15 25 °C 1.8 V 17 pFON capacitance Switch ON,Digital input
C
I
V
I
= V
+
or GND, See Figure 15 25 °C 1.8 V 3 pFcapacitance
R
L
= 50 Ω, 1.65 V toBandwidth BW See Figure 18 25 °C 341 MHzSwitch ON, 1.95 VR
L
= 50 Ω, Switch OFF, 1.65 V toOFF isolation O
ISO
25 °C – 81 dBf = 10 MHz, See Figure 19 1.95 VR
L
= 50 Ω, Switch ON, 1.65 V toCrosstalk X
TALK
25 °C – 61 dBf = 10 MHz, See Figure 20 1.95 V
Supply
25 °C 1Positive supply Switch ON orI
+
V
I
= V
+
or GND, 1.95 V µAcurrent OFF
Full 10
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TYPICAL PERFORMANCE
Ω
°C
Ω
°C
°C
°C
Ω
°C
°C
°C
TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
Figure 1. r
on
vs V
COM
Figure 2. r
on
vs V
COM
(V
+
= 3 V)
Figure 3. r
on
vs V
COM
(V
+
= 4.5 V) Figure 4. Leakage Current vs Temperature (V
+
= 5.5 V)
Figure 5. Charge Injection (Q
C
) vs V
COM
Figure 6. t
ON
and t
OFF
vs V
+
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°C
TS5A3357
SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
TYPICAL PERFORMANCE (continued)
Figure 7. t
ON
and t
OFF
vs Temperature (V
+
= 5 V) Figure 8. Logic-Level Threshold vs V
+
Figure 9. Frequency Response (V
+
= 3 V) Figure 10. OFF Isolation and Crosstalk vs Frequency(V
+
= 3 V)
Figure 11. Total Harmonic Distortion vs Frequency Figure 12. Power-Supply Current vs Temperature(V
+
= 5 V) (V
+
= 5 V)
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TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
PIN DESCRIPTION
PIN NO. NAME DESCRIPTION
1 NO0 Normally open2 NO1 Normally open3 NO2 Normally open4 GND Digital ground5 IN2 Digital control to connect COM to NO6 IN1 Digital control to connect COM to NO7 COM Common8 V
+
Power supply
PARAMETER DESCRIPTION
SYMBOL DESCRIPTION
V
COM
Voltage at COMV
NO
Voltage at NOr
on
Resistance between COM and NC or COM and NO ports when the channel is ONr
peak
Peak on-state resistance over a specified voltage range
Δr
on
Difference of r
on
between channels in a specific devicer
on(flat)
Difference between the maximum and minimum value of r
on
in a channel over the specified range of conditionsI
NO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF stateLeakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the outputI
NO(ON)
(COM) openLeakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON stateI
COM(ON)
and the output (NC or NO) openI
COM(OFF)
Leakage current measured at the COM port during the power-down condition, V
+
= 0V
IH
Minimum input voltage for logic high for the control input (IN)V
IL
Maximum input voltage for logic low for the control input (IN)V
I
Voltage at the control input (IN)I
IH
, I
IL
Leakage current measured at the control input (IN)Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagationt
ON
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagationt
OFF
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.Break-before-make time. This parameter is measured under the specified range of conditions and by the propagationt
BBM
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)Q
C
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.Charge injection, Q
C
= C
L
×ΔV
COM
, C
L
is the load capacitance and ΔV
COM
is the change in analog output voltage.C
NO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFFC
NO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ONC
COM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ONC
COM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFFC
I
Capacitance of control input (IN)OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specificO
ISO
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO toX
TALK
NC). This is measured in a specific frequency and in dB.BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is – 3 dB below the DC gain.I
+
Static power-supply current with the control (IN) pin at V
+
or GND
Copyright © 2004 – 2007, Texas Instruments Incorporated Submit Documentation Feedback 13
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PARAMETER MEASUREMENT INFORMATION
Ω
OFF-StateLeakageCurrent
ON-StateLeakageCurrent
CapacitanceismeasuredatNO,
COM,andINinputsduringON
andOFFconditions.
TS5A3357
SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
Figure 13. ON-State Resistance (r
on
)
Figure 14. ON- and OFF-State Leakage Current (I
COM(ON)
, I
COM(OFF)
, I
NO(ON)
, I
NO(OFF)
)
Figure 15. Capacitance (C
I
, C
COM(ON)
, C
NO(OFF)
, C
COM(OFF)
, C
NO(ON)
)
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Ω
Ω
Ω
Ω
x
x
x
x
V 0.3V
OH –
V 0.3V
OH +
VOH
VOH
VOL
VOH
tr=<2.5ns
t =<2.5ns
f
Ω
TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
PARAMETER MEASUREMENT INFORMATION (continued)
A. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.B. C
L
includes probe and jig capacitance.
Figure 16. Turn-On (t
ON
) and Turn-Off Time (t
OFF
)
A. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.B. C
L
includes probe and jig capacitance.
Figure 17. Break-Before-Make Time (t
BBM
)
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Network AnalyzerSetup
SourcePower=0dBM
DCBias=350mV
ChannelON:NO0toCOM
Ω
Ω
Network AnalyzerSetup
SourcePower=0dBM
DCBias=350mV
ChannelOFF:NO0toCOM
Ω
Ω
Ω
Ω
Ω
Network AnalyzerSetup
SourcePower=0dBM
DCBias=350mV
ChannelOFF:NO0toCOM
ChannelON:NO0 NO1to
COM
–
TS5A3357
SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 18. Bandwidth (BW)
Figure 19. OFF Isolation (O
ISO
)
Figure 20. Crosstalk (X
TALK
)
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x Δ
Δ
TS5A3357SINGLE 5- ΩSP3T ANALOG SWITCH5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS177A – OCTOBER 2004 – REVISED DECEMBER 2007
PARAMETER MEASUREMENT INFORMATION (continued)
A. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.B. C
L
includes probe and jig capacitance.
Figure 21. Charge Injection (Q
C
)
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TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TS5A3357DCUR US8 DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 6-May-2011
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TS5A3357DCUR US8 DCU 8 3000 202.0 201.0 28.0
PACKAGE MATERIALS INFORMATION
www.ti.com 6-May-2011
Pack Materials-Page 2
MECHANICAL DATA
MPDS049B – MAY 1999 – REVISED OCTOBER 2002
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
DCT (R-PDSO-G8) PLASTIC SMALL-OUTLINE PACKAGE
0,60
0,20
0,25
0°– 8°
0,15 NOM
Gage Plane
4188781/C 09/02
4,25
5
0,30
0,15
2,90 3,75
2,70
8
4
3,15
2,75
1
0,10
0,00
1,30 MAX
Seating Plane
0,10
M
0,13
0,65
PIN 1
INDEX AREA
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion
D. Falls within JEDEC MO-187 variation DA.
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