HSM123-E - Renesas Electronics

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

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Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regar ding these materials

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circuit application examples contained in these materials.

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HSM123

Silicon Epitaxial Planar Diode for High Speed Switching

ADE-208-027F (Z)

Rev.6

Nov. 2002

Features

• Low capacitance, proof against high voltage.

• Fast recovery time.

• MPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HSM123 A9 MPAK

Pin Arrangement

1. Cathode2

2. Anode1

3. Cathode1

Anode2(Top View)

HSM123

Rev.6, Nov. 2002, page 2 of 2

Absolute Maximum Ratings *1

(Ta = 25°C)

Item Symbol Value Unit

Peak reverse voltage VRM 85 V

Reverse voltage VR 80 V

Peak forward current IFM 300 mA

Non-Repetitive peak forward surge current IFSM *2 4 A

Average forward current IO 100 mA

Junction temperature Tj 125 °C

Storage temperature Tstg –55 to +125 °C

Notes: 1. Per one device.

2. Within 1 µs forward surge current.

Electrical Characteristics *

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

VF1 — 0.70 1.0 IF = 10 mA

VF2 — 0.79 1.0 IF = 50 mA

Forward voltage

VF3 — 0.85 1.2

IF = 100 mA

Reverse current IR — — 0.1 µA VR = 80 V

Capacitance C — 1.0 4.0 pF VR = 0 V, f = 1 MHz

Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω

Note: Per one device.

HSM123

Rev.6, Nov. 2002, page 3 of 3

Main Characteristic

0 0.2 0.4 0.6 0.8 1.0 0

0.1

100101.0

1.0

f=1MHz

20 8060 10040

10-5

10-6

10-4

10-7

10-8

10-9

10-2

10-3

10-5

10-6

10-7

10-8

10-9

Fig.3 Capacitance vs. Reverse Voltage

Reverse voltage VR (V)

Capacitance C (pF)

Reverse current IR (A)

Fig.2 Reverse Current vs. Reverse Voltage

Reverse voltage VR (V)

Fig.1 Forward Current vs. Forward Voltage

Forward voltage VF (V)

Forward current IF (A)

HSM123

Rev.6, Nov. 2002, page 4 of 4

Package Dimensions

0.16

0 – 0.1

+ 0.10

– 0.06

3–0.4

+ 0.10

– 0.05

+ 0.3

– 0.1

(0.95) (0.95)

1.9 ± 0.2

2.8

+ 0.2

– 0.6

(0.65)

1.5 ± 0.15

(0.65)

1.1

+ 0.2

– 0.1

(0.3)

Hitachi Code

JEDEC

JEITA

Mass

(reference value)

MPAK

—

Conforms

0.011 g

As of July, 2002

Unit: mm

HSM123

Rev.6, Nov. 2002, page 5 of 5

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

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