intel 27010 1M (128K x 8) BYTE-WIDE EPROM m Compatible with 28-Pin JEDEC m Fast Programming EPROMs: 27256, 27512 Quick-Pulse Programming Algorithm m Complete Upgrade Capabilit _ PCM Dove Care Status lows Programming Time as fast as Wiring in Higher Order Addresses 15 seconds m Standard EPROM Features @ High-Performance HMOS* II-E TTL Compatibility 200 ns Access Time Two Line Control Low 150 mA Active Power inteligent identifier for Automated m Compact Packaging Programming Smallest Standard-Addressed Footprint 32-Pin Cerdip The Intel 27010 is a 5V-only, 1,048,576-bit Erasable Programmable Read Only Memory. It is organized as 128 K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs allows upgrades from 16K through 512K EPROMs. In addition, unique circuit designs provide for no-hardware-change upgrades to 8N-bits in the future. When a 32-pin DIP socket is configured for 27256 or 27512 EPROMs, it is easily upgraded for the 27010. By adding an A16 address line and Vcc jumper, the 27010 can directly replace lower density 28-pin EPROMs. Upgrades through 8M-bits are easily accommodated. Since the PGM pin is in a dont care state during read mode, direct connections to higher order addresses, A17 and A18, can be made without affecting the devices read operation. . The 27010 provides the highest capacity available to microprocessors with 8-bit bus organizations for storage of large portions of operating system and application software. Its 200 ns access time provides no-WAIT-state operation with high-performance CPUs such as the 10 MHz 80188. The 27010 offers a minimal chip solution for code storage needs of 100% firmware-based equipment. And for reprogrammable systems, popular appli- cation programs can be made much more user friendly. Often-used software is silently and quickly executed from reliable EPROM storage, greatly enhancing system utility. When two or more EPROM sockets are used in 16-bit or 32-bit systems, the compact 32-pin DIP package requires the smallest board space of any high density memory without utilizing paged or multiplexed addressing schemes. The 27010 shares several features with standard JEDEC EPROMs, including two-line output control for simpli- fied interfacing and the intgligent Identifier feature for automated programming. It can also be programmed quickly using Intels Quick-Pulse Programming Algorithm. The 27010 is manufactured using an advanced version of Intel's HMOS* I!-E process which assures highest reliability and manufacturability. *HMOS is a patented process of Intel Corporation. September 1989 4-162 Order Number: 290105-00527010 Figure 2. Cerdip DIP Pin Configurations 4-163 Vv DATA OUTPUTS cc oO Oo-07 GND o_> (mE ores {ttt ttt OE OUTPUT ENABLE PGN CHIP ENABLE ct ) PROG LOGIC OUTPUT BUFFERS _> y : Y-GATING P DECODER 2 Ao-Ais > ADDRESS 4 > x : 1048.5 INPUTS > e 76-BiT | DECODER | CELL MATRIX e > 290105-1 Figure 1. Block Diagram Pin Names Ao-Aig | ADDRESSES CE CHIP ENABLE GE OUTPUT ENABLE Oo-O7 | OUTPUTS PGM | PROGRAM N.C. | NO INTERNAL CONNECT 27010/27C010 27512 | 27256 27256 | 27612 SMbit | AMbIt | MBIT 270512 | 276256 270286 | 270512 | 2Mbit | AMbit | BMbIt Aig | Ver | Vpp Ver C1 32) Yee Voc | Veco | Veo Ais | Aie | Ate Aye C2 31 POM PGM | Aw | Ai Ais | Ais | Ais Ais Vpp Ays U3 SOB Nc. Voc Vec Ay7 | At7 Ai Aya | Ai2 | Ar Ai2 Ai2 As 29 Ay, Aw Ara Ava | Ata Ava Ar A? Ar Az A; as 28D Ay; Aig Ais Aig | Ais Aig Ae | As Ag Ag As a6 2703 As As As Ag | As Ag As As As As As 4,07 26D Ag Ag Ag Ag Ag Ag Ag Ag Ag Aa Ag a8 23D An Au An Au | An An Ag Ag Ag Ag Ag AsC]9 24 OE OE | OE/Vpp| OE | OE | OE/Vpp Ao Ao Ao Ap Ag A, 10 23D Ai A1o Aso Aio Aio Ato Ay At Ay Ay Ay Aycyiy 220 & cE CE CE | CE ce Ao Ao Ao Ao Ao AoC 12 219} 07 O7 O7 O7 | O7 07 Oo Oo Oo Qo Oo 9 3 207 0g Os O6 O68 Os O 0; O71 O; O71 0; oC 191 05 Os Os Os Os Os O2 Oo Q2 O2 Oz 02 415 18510, O4 O4 O4 | O4 O4 GND | GND | GND | GND GND GND Ch 16 172 05 O3 Q3 O3 | Og O3 290105-2! intel 27010 EXTENDED TEMPERATURE (EXPRESS) EPROMs The Intel EXPRESS EPROM family is a series of electrically programmable read only memories which have received additional processing to enhance product characteristics. EXPRESS processing is available for several densities of EPROM, allowing the choice of appropriate memory size to match sys- tem applications. EXPRESS EPROM products are EXPRESS EPROM PRODUCT FAMILY available with 168 +8 hour, 125C dynamic burn-in using Intels standard bias configuration. This pro- cess exceeds or meets most industry specifications of burn-in. The standard EXPRESS EPROM operat- ing temperature range is 0C to 70C. Extended op- erating temperature range (40C to +85C) EXx- PRESS products are available. Like all Intel EPROMs, the EXPRESS EPROM family is inspected to 0.1% electrical AQL. This may allow the user to reduce or eliminate incoming inspection testing. EXPRESS OPTIONS PRODUCT DEFINITIONS 27010 VERSIONS Type | Operating Temperature | Burn-in 125C (hr) Packaging Options Q oC to + 70C 168 +8 Speed Versions Cerdip T 40C to + 85C None -200V05 QTL L 40C to + 85C 168 +8 READ OPERATION D.C. CHARACTERISTICS Electrical parameters of EXPRESS EPROM products are identical to standard EPROM parameters except for: TD27010 Symbol Parameter LD27010 Test Conditions Min Max loc," Voc Active Current (mA) 160 OE = CE = Vit, Tambient = 40C Voc Active Current 125 OE = CE = Vit at High Temperature (mA) Vpp = Voc. Tambient = 85C NOTE: 1. The maximum current value is with outputs Og to O7 unloaded. Vep (At 2 PD Yeo AygQ2 310 Pon Ay Q3 300 N.c. Ay 04 2D Ay 4735 28 Ay3 acs 2705 As 4,17 26D) As ade 27010 sas aso 24F OE A, O} 10 23E3 Aio AC] ty 220% Vee Yec dC 12 a1 mrt 07 OQ Nn 13 20 " Og o% N 14 19 N Os 02 15 1a 0, Guo] 16 17 Ewart 05 290105-4 OE = +5V A=1KN Veg = +5V Vpp = +5V GND = OV = GND PGM = +5V Ais 290105-5 Binary Sequence from Ao to Aig Burn-in Blas and Timing Diagrams 4-164