Preliminary TMPA420DS
tai'mec
www.taimec.com.tw / www.class-d.com.tw Rev.3.0 August 15, 2007
Copyright ©2005,Tai-1 Microelectronics Corp. 1
15W/Ch STEREO CLASS-D AUDIO POWER AMPLIFIER
GENERAL DESCRIPTION
The TMPA420DS is a Bridge-Tied-Load (BTL) output Class-D
audio power amplifier for driving speakers with high power
efficiency. It is able to drive 4Ω, 6Ω, 8Ω or 16Ω speakers.
The output power can be up to 15W per channel. No external
heat-sink is necessary.
The gain of the amplifier is defined by either gain0/gain1
gain control or by input resistance. Thermal protection and
short-circuit protection are integrated for safety purpose.
The internal de-pop circuitry eliminates pop noise at
power-up & shutdown operations.
APPLICATIONS
LCD Monitors, TVs, DVD Players and Powered Speakers
PACKAGE
QFN48 available
FEATURES
15W/Ch Stereo Class-D Output
Power efficiency is up to 82%
Convenient gain control
Time delay for de-pop control
Thermal Protection
Output Pin Short-Circuit Protection
Low Quiescent Current (10mA Typical at 12V)
Low Current in Shutdown Mode (<1µA Typical)
Separate VCC & PVCC
Regulated 5-V Supply Output
For best performance, please refer to
http://www.taimec.com.tw/English/EVM.htm
http://www.class-d.com.tw/English/EVM.htm
for PCB layout.
REFERENCE CIRCUIT
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Preliminary TMPA420DS
tai'mec
www.taimec.com.tw / www.class-d.com.tw Rev.3.0 August 15, 2007
Copyright ©2005,Tai-1 Microelectronics Corp. 2
PVCCL
PVCCL
LOUTN
LOUTN
PGNDL
PGNDL
LOUTP
PVCCL
PVCCL
LOUTP
PVCCR
PVCCR
ROUTN
ROUTN
PGNDR
PGNDR
ROUTP
PVCCR
PVCCR
ROUTP
NC
NC NC
NC
Please email david@taimec.com.tw for complete datasheet.
Tai-1 Microelectronics reserves the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or service without notice. Customers are
responsible for their products and applications using Tai-1 Microelectronics components.
Note that the external components or PCB layout should be designed not to generate abnormal
voltages to the chip to prevent from latch up which may cause damage to the device.
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Preliminary TMPA420DS
tai'mec
www.taimec.com.tw / www.class-d.com.tw Rev.3.0 August 15, 2007
Copyright ©2005,Tai-1 Microelectronics Corp. 3
Typical Application
S1switch
C13 1uF(6.3V)
C24
0.1uF(16V)
C4 1uF(6.3v) C5 1uF(6.3v)
+
C16
10uF(16V)
C25
0.1uF(16v)
R9
10k
SD
1
RINN
2
RINP
3
HFVDDR
4
LINP
5
NC
12
LINN
6
NC
11
HFVDDL
7
AGND
8
GAINO
9
GAIN1
10
NC
13
PVCCL
14
PVCCL
15
LOUTN
16
LOUTN
17
NC
24
PGNDL
18
PVCCL
23
PGNDL
19
LOUTP
20
LOUTP
21
PVCCL
22
NC 37
PVCCR 38
PVCCR 39
ROUTP 40
ROUTP 41
NC 48
PGNDR 42
PVCCR 47
PGNDR 43
ROUTN 44
ROUTN 45
PVCCR 46
NC 25
AGND 26
HFRC 27
AVDD 28
VDDZ 29
NC 36
AGND 30
NC 35
NC 31
NC 32
AVCC 33
NC 34
U1
420DS
PVCC
C11 1uF(6.3v) C6 1uF(6.3v)
C3 1uF(6.3v)
C12 1uF(6.3v)
PVCC
C26
0.1uF(16v)
PVCC
C14 1uF(6.3V)
C22
0.1uF(16V)
PVCC
C23
0.1uF(16V)
PVCC
SD
RINP
LINP
J2 SW SPST
J3 SW SPST
R12
100
PVCC
L8
33uH
C8
1uF(16V)
L7
33uH
C7
1uF(16V)
LOUT+LOUT-
L5
33uH
C1
1uF(16V)
L6
33uH
C2
1uF(16V)
ROUT- ROUT+
R5 22k
C9
0.47nF(6.3v)
C10
0.47nF(6.3v)
R6 22k
R7 22k
R8 22k R10 120k
R11 120k
AVDD
AVDD
J1
PHONEJACK STEREO
J4
VR R1 0
C18
1000uF(25V)
C19
1000uF(25V)
R2 330
R3 330
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Preliminary TMPA420DS
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Copyright ©2005,Tai-1 Microelectronics Corp. 4
TERMINAL FUNCTIONS
TERMINAL
NAME PIN NO I/O
DESCRIPTION
AGND 8,26,30 Analog ground
AVCC 33 High-voltage power supply (8V to 15V)
AVDD 28 I 5-V voltage
HFVDDR 4 O 2.5-V Reference for convenience of single-ended inputs
HFVDDL 7 O 2.5-V Reference for convenience of single-ended inputs
HFRC 27 O Power up delay
LINN 6 I Negative differential input for left channel
LINP 5 I Positive differential input for left channel
LOUTN 16,17 O Class-D negative output for left channel
LOUTP 20,21 O Class-D positive output for left channel
PGNDL 18,19 Power ground for left channel
PGNDR 42,43 Power ground for right channel
PVCCL 14,15,22,23
Power supply for left channel(8V to 15V)
PVCCR 38,39,46,47
Power supply for right channel(8V to 15V)
RINP 3 I Positive differential input for right channel
RINN 2 I Negative differential input for right channel
ROUTN 44,45 O Class-D negative output for right channel
ROUTP 40,41 O Class-D positive output for right channel
SD 1 I Shutdown (Low valid)
GAIN0 9 I Gain0 control
GAIN1 10 I Gain1 control
VDDZ 29 O 5-V Regulated output (25mA output)
NC 11,12,13,24,
25,31,32,34,
35, 36,37,48
No connection
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range unless otherwise noted(1)
In normal mode -0.3V to 17V V
Supply voltage, PVCCR, PVCCL, AvCC (Iload=0) In shutdown mode -0.3V to 17V V
Input voltage, SD -0.3V to AVCC+0.3V V
Input voltage, Gain0, Gain1, LINN, LINP, RINN, RINP -0.3V to 5V V
Continuous total power dissipation See package dissipation ratings
Operating free-air temperature, TA -20 to 85
C
Operating junction temperature, TJ -20 to 150
C
Storage temperature, Tstg -40 to 150
C
(1) Stresses beyond those listed underabsolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
Supply voltage, VCC PVCCR, PVCCL, AvCC 8 15 V
High-level input voltage, VIH SD , Gain0, Gain1 2.0 V
Low-level input voltage, VIL SD , Gain0, Gain1 0.8 V
VCC=15V, SD =15V 100
High-level input current, IIH VCC=15V, Gain0=Gain1=5V 5 uA
VCC=15V, SD =0V 0.5
Low-level input current, IIL VCC=15V, Gain0=Gain1=0V 0.5 uA
Operating free-air temperature, TA -20 85
C
PACKAGE DISSIPATION RATINGS
PACKAGE DERATING
FACTOR TA
25
C
POWER RATING TA = 70
C
POWER RATING TA = 85
C
POWER RATING
QFN48(FD) 33 mW/
C 4.125W 2.64W 2.15W
DC CHARACTERISTICS
TA=25
C, VCC=15V, RL=8Ω speaker (unless otherwise noted)
PARAMETER TEST CONDITIONS
MIN
TYP MAX
UNIT
VOS Output offset voltage LINN LINP RINN RINP AC
grounded 30 mV
VDD/AVDD 5-V Regulated output IO=0 to25mA, SD =High,
VCC=8V to 15V 4.5 5.0 5.5 V
fOSC Oscillator frequency PVCC= VCC=8-15V 250 350 kHz
HFVDDR/HFVDDL Half VDD reference output No load 0.5×
AVDD
SD =High, VCC= 12V 10 20
ICC Quiescent current (no load) SD =High, VCC= 15V 16 30 mA
ICC(SD) Supply current in shutdown mode SD =0.8V, VCC= 9V~15V 1 uA
High side 600
Low side 500
rds(on) Drain-source on-state resistance
for all
outputs
VCC=15V
IO=1A,
Total 1100 mΩ
Gain0=High, Gain1= High
34
Gain0=Low, Gain1=High
28
Gain0=High, Gain1= Low
22
Voltage Gain at Vcc=15V
Gain0=Low, Gain1= Low
18
dB
Gain0=High, Gain1= High
32
Gain0=Low, Gain1=High
26
Gain0=High, Gain1= Low
20
Voltage Gain at Vcc=12V
Gain0=Low, Gain1= Low
16
Gain0=High, Gain1= High
30
Gain0=Low, Gain1=High
25
Gain0=High, Gain1= Low
19
Gain
Voltage Gain at Vcc=9V
Gain0=Low, Gain1= Low
14
dB
Gain0=High, Gain1= High
15
Gain0=Low, Gain1=High
30
Gain0=High, Gain1= Low
60
Zi Input resistance of
RINN/RINP/LINN/LINP Gain0=Low, Gain1= Low
100
kΩ
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AC CHARACTERISTICS
TA=25
C, VCC=15V, RL=8Ω speaker (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN
TYP MAX
UNIT
15V 12.5
12V 10
RL=4Ω 9V 6.22
W
15V 15
12V 9.3
RL=6Ω 9V 5.34
W
15V 12.7
12V 8
RL=8Ω 9V 4.58
W
15V 7.65
12V 4.8
*PO(max)
Maximum continuous output power
(r.m.s) at 1kHz,
(Limited by thermal condition)
RL=16Ω
9V 2.73
W
Vn Output noise -70 dBV
SNR Signal-to-noise ratio Maximum output at THD+N0.5,
f=1kHz 85 dB
Crosstalk
Crosstalk between outputs Gain0=Gain1=high, VCC=12V, PO
=1W
RL=8Ω -60 dB
Thermal trip point 145
C
Thermal hysteresis 25 C
*Important noticeMore copper area and vias are required for high output power especially
when the output power is higher than 7W×2.
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DETAILED DESCRIPTION
Efficiency
The output transistors of a class D amplifier act as switches. The power loss is mainly due to
the turn on resistance of the output transistors when driving current to the load. As the turn on
resistance is so small that the power loss is small and the power efficiency is high. With 8 ohm
load the power efficiency can be better than 80%.
PCB layout for power dissipation
No heat sink is necessary for power dissipation. However the PCB layout should be well
designed to dissipate heat for high output power. With 80% power efficiency the generated
heat when driving 15 watts to the 8 ohm load is about 3.75 watts. The heat can be carried out
through the thermal pad of the device to the PCB. To ensure proper dissipation of heat the
PCB has to have heat path from the bottom of the device which is soldered to the PCB. The
area of the metal on the PCB for heat dissipation should be big enough. It is suggested that
both sides of the PCB are used for power dissipation.
Shutdown
The shutdown mode reduces power consumption. A LOW at shutdown pin forces the device in
shutdown mode and a HIGH forces the device in normal operating mode. Shutdown mode is
useful for power saving when not in use. This function is useful when other devices like
earphone amplifier on the same PCB are used but class D amplifier is not necessary.
Internal circuit for shutdown is shown below.
HFRCpop-less
HFRC provides a way of soft start up delay. A half_Vcc voltage detector is integrated to detect
a RC charge up. The resistor of 320k ohms of the RC circuit is also integrated in the chip but
the capacitor is externally hooked up. For C=1uF the half_Vcc delay is
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1-e-t/RC=0.5
or e-t/RC=0.5
that is
t = - RC In0.5= 320k × 1u)( 0.693 = 0.22 seconds
Differential input VS single ended input
Differential input offers better noise immunity over single ended input. A differential input
amplifier suppresses common noise and amplifies the difference voltage at the inputs. For
single ended applications just tie the negative input end of the balanced input structure to
ground. If external input resistors are used, the negative input has to be grounded with a
series resistor of the same value as the positive input to reduce common noise.
Voltage gain
The voltage gain can be set through gain0/gain1 control or by external input resistors
connecting to input pins. If external resistors are used they should be well matched. Well
matched resistors are also required even for single ended input configuration for low noise.
Suppose the external input resistors Rext are used then the voltage gain is roughly
Av=750k ohms / (Rext+15k ohms) for gain0=gain1=High
Where 15k ohms is the internal resistance of the input pins. For other gain0/gain1 states
please refer to DC CHARACTERISTICS for different input resistance.
Input filter
AC coupling capacitors are required to block the DC voltage from the device. They also define
the 3db frequency at the low frequency side.
The 3db frequency of the low frequency side is
f-3db = 1/ (2πR C)
where C is the AC coupling capacitance and R is the total resistance in series with C.
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Note that R=Zin(internal resistance) + Rext(external resistance)
Also note that the input resistance of RINN/RINP/LINN/LINP is 15K ohms at
Gain0=Gain1=high. Please refer to DC CHARACTERISTICS for detail.
In the following diagram Rext=22k ohms, Zin=15k ohms and C=C1=0.47uF. Thus the 3db
frequency at the low frequency side is about 9Hz.
C1
0.47uF
R22k C1
0.47uF
Zin 15k
R22k
Zin 15k
Class-D amplifier
Rinp
Rinn
C2
0.47nF
C1
0.47uF
R22k C1
0.47uF
Zin 15k
R22k
Zin 15k
Linp
Linn
C2
0.47nF
right channel
left channel
A bypass capacitor placed in between the positive signal path and negative signal path is to
attenuate the high frequencies. It defines the 3bd frequency at the high frequency side. The
input filter becomes a band pass filter.
The 3db frequency of the high frequency side is
f3db=1/(2πRC)
where C is the bypass capacitance and R is the total resistance in parallel with C.
In this example Rext=22k ohms, Zin=15k ohms and C=C2=0.47nF. Thus the 3db frequency
at the high frequency side is about 19kHz.
Output filter
Ferrite bead filter can be used for EMI purpose. The ferrite filter reduces EMI around 1 MHz
and higherFCC and CE only test radiated emissions greater than 30 MHz. When selecting a
ferrite bead, choose one with high impedance at high frequencies, but low impedance at low
frequencies.
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Use an LC output filter if there are low frequency(<1 MHzEMI sensitive circuits and/or there
are long wires from the amplifier to the speaker. EMI is also affected by PCB layout and the
placement of the surrounding components.
The suggested LC values for different speaker impendence are showed in following figures for
reference.
Typical LC Output Filter (1)
0.1μF
0.1μF
Vo+
Vo-
33
μ
H
33
μ
H
0.47μF
Typical LC Output Filter (2)
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EARPHONE USE
Class-D output can be used to drive earphone. However to avoid high power to overdrive
earphone and to prevent human ear to accidentally be hurt, a resistor has to be put in series
with the earphone speaker. Typically a resistor of 330 ohms is adequate for this purpose.
Since stereo earphone can not have BTL configuration, one end of BTL signals can be used
as SE (single-ended) output.
Over temperature protection
A temperature sensor is built in the device to detect the temperature inside the device. When
a high temperature around 145oC and above is detected the switching output signals are
disabled to protect the device from over temperature. Automatic recovery circuit enables the
device to come back to normal operation when the internal temperature of the device is below
around 120 oC.
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Over temperature protection
A temperature sensor is built in the device to detect the temperature inside the device. When
a high temperature around 145oC and above is detected the switching output signals are
disabled to protect the device from over temperature. Automatic recovery circuit enables the
device to come back to normal operation when the internal temperature of the device is below
around 120oC.
Over current protection
A current detection circuit is built in the device to detect the switching current of the output
stages of the device. It disables the device when a pulse current beyond 8 amps is detected. It
protects the device when there is an accident short between outputs or between output and
ground pins. It also protects the device when an abnormal low impedance is tied to the output.
High current beyond the specification may potentially causes electron migration and
permanently damage the device. Shutdown or power down is necessary to resolve the
protection situation. There is no automatic recovery from over current protection.
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Preliminary TMPA420DS
tai'mec
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Copyright ©2005,Tai-1 Microelectronics Corp. 13
Physical Dimensions ( IN MILLIMETERS)
QFN48
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Copyright ©2005,Tai-1 Microelectronics Corp. 14
IMPORTANT NOTICE
Tai-1 Microelectronics Corp. reserves the right to make changes to its products and services and to
discontinue any product or service without notice. Customers should obtain the latest relevant information for
reference. Testing and quality control techniques are used to screen the parameters. Testing of all
parameters of each product is not necessarily performed.
Tai-1 Microelectronics Corp. assumes no liability for applications assistance or customer product design. To
minimize the risks associated with customer products and applications, customers should provide adequate
design and operating safeguards.
Reproduction of information in data sheets or related documentation is permissible only if reproduction is
without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Tai-1
Microelectronics Corp. is not responsible or liable for such altered documentation.
Resale of Tai-1 Microelectronics Corp. products or services with statements different from the parameters
stated by Tai-1 Microelectronics Corp. for that product or service voids all express and any implied warranties.
Tai-1 Microelectronics Corp. is not responsible or liable for any such statements.
Copyright ©2005,Tai-1 Microelectronics Corp.
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