1N4933GP-1N4937GP
1N4933GP-1N4937GP, Rev. C2001 Fairchild Semiconductor Corporation
1N4933GP - 1N4937GP
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
•Low forward voltage drop.
•High surge current capability.
• High reliability.
• High current capability.
Symbol
Parameter
Device
Units
4933G 4934 4935 4936 4937
VF Forward Voltage @ 1.0 A 1.2 V
trr Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, Irr = 0.25 A 150 ns
IR Reverse Current @ rated VR TA = 25°C
TA = 125°C 5.0
100 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 15 pF
DO-41
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
4933G 4934 4935 4936 4937
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 V
IF(AV) Average Rectified Forward Current,
.375 " lead length @ TA = 75°C 1.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 30 A
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperature -65 to +175 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 2.73 W
RθJA Thermal Resistance, Junction to Ambient 55 °C/W
Thermal Characteristics
1N4933GP-1N4937GP, Rev. C
1N4933GP-1N4937GP
2001 Fairchild Semiconductor Corporation
Typical Characteristics
Pulse
Generator
(Note 2)
50Ω
NONINDUCTIVE 50Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
0 25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60HZ
RESIS TI VE OR
INDUCTIVE LOAD
.375" 9.0 mm LEAD
LENG THS
12 51020 50100
0
10
20
30
40
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.01
0.03
0.1
0.3
1
3
10
20
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Widt h = 200 µ
µµ
µS
2% Du ty Cyc le
T = 25 C
º
J
Pulse Widt h = 300 µ
µµ
µS
2% Du ty Cyc le
T = 25 C
º
A
Reverse Characteri stics
0 20406080100120140
0.1
1
10
100
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
J
T = 25 C
º
A
T = 100 C
A º
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 1 0 n s/ cm
1 2 5 10 20 50 100
1
2
5
10
20
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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