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Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5185
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
The mark shows major revised points.
Document No. PU10516EJ01V0DS (1st edition)
(Previous No. P12109EJ2V0DS00)
Date Published August 2004 CP(K)
Printed in Japan ©
NEC Compound Semiconductor Devices, Ltd. 1994 , 2004
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 4-pin super minimold Package
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5185 50 pcs (Non reel)
2SC5185-T1 3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 5 V
Collector to Emitter Voltage VCEO 3 V
Emitter to Base Voltage VEBO 2 V
Collector Current IC 30 mA
Total Power Dissipation Ptot Note 90 mW
Junction Temperature Tj 150
°C
Storage Temperature Tstg −65 to +150 °C
Note Free air
Data Sheet PU10516EJ01V0DS
2
2SC5185
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA
DC Current Gain hFE Note 1 VCE = 2 V, IC = 20 mA 70 − 140 −
RF Characteristics
Gain Bandwidth Product (1) fT VCE = 2 V, IC = 20 mA, f = 2.0 GHz 10 13 − GHz
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 10 mA, f = 2.0 GHz 8.0 11 − GHz
Insertion Power Gain (1) S21e2 VCE = 2 V, IC = 20 mA, f = 2.0 GHz 8.0 11 − dB
Insertion Power Gain (2) S21e2 VCE = 1 V, IC = 10 mA, f = 2.0 GHz 7.5 9.0 − dB
Noise Figure (1) NF VCE = 2 V, IC = 3 mA, f = 2.0 GHz − 1.3 2.0 dB
Noise Figure (2) NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz − 1.3 2.0 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1.0 MHz − 0.3 0.6 pF
Notes 1. Pulse measurement: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank FB
Marking T86
hFE Value 70 to 140
Data Sheet PU10516EJ01V0DS 3
2SC5185
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC Current Gain h
FE
Collector Current I
C
(mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Free Air
200
100
0 50 100 150
90 mW
0.6
0.5
0.4
0.3
0.2
0 1.0 2.0 3.0 4.0 5.0
f = 1 MHz
50
40
30
20
10
0 0.5 1.0
V
CE
= 2 V 25
20
15
10
5
0 1.0 2.0 3.0
200 A
µ
180 A
µ
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
I
B
= 20 A
µ
500
200
100
10
20
50
V
CE
= 2 V
V
CE
= 1 V
1 2 5 10 20 50 100
16
1 2 5 10 20 100
14
12
10
8
6
4
2
V
CE
= 1 V
f = 2 GHz
V
CE
= 2 V
30
Remark The graphs indicate nominal characteristics.
Data Sheet PU10516EJ01V0DS
4
2SC5185
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
14
1 2 5 10 20 100
12
10
8
6
4
VCE = 1 V
f = 2 GHz
30
4
1 2 5 10 20 100
3
2
1
0
VCE = 1 V
f = 2 GHz
VCE = 2 V
VCE = 2 V
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PU10516EJ01V0DS 5
2SC5185
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.15
+0.1
–0.05
0.3
0 to 0.1
3
1.30
2.0±0.2
1.25
0.650.60
4
21
2.1±0.2
1.25±0.1
0.650.65
0.4
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
T86
Data Sheet PU10516EJ01V0DS
6
2SC5185
M8E 00. 4 - 0110
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0406
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
2SC5185
