© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 800 V
VDGR TJ= 25°C to 175°C; RGS = 1 M Ω800 V
VGS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C14A
IDM TC= 25°C, pulse width limited by TJM 40 A
IAR TC= 25°C7A
EAR TC= 25°C30mJ
EAS TC= 25°C 500 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V DSS, 10 V/ns
TJ≤ 150°C, RG = 5 Ω
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in.
Weight PLUS220, PLUS220 SMD 2 g
TO-268, TO-3P 5.5 g
TO-247 6 g
G = Gate D = Drain
S = Source TAB = Drain
DS99593E(07/06)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250μA 800 V
VGS(th) VDS = VGS, ID = 4 mA 3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0 V ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 720 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
IXFH 14N80P
IXFQ 14N80P
IXFT 14N80P
IXFV 14N80P
IXFV 14N80PS
VDSS = 800 V
ID25 = 14 A
RDS(on) ≤≤
≤≤
≤ 720 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250 ms
TO-247 (IXFH)
GS
GS
D
PLUS220 (IXFV)
D (TAB)
GS
PLUS220SMD (IXFV...S)
D (TAB)
D (TAB)
D (TAB)
(TAB)
GS
D
TO-3P (IXFQ)
TO-268 (IXFT)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, pulse test 8 15 S
Ciss 3900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 250 pF
Crss 19 pF
td(on) 26 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 29 ns
td(off) RG = 5 Ω (External) 62 ns
tf27 ns
Qg(on) 61 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 18 nC
Qgd 20 nC
RthJC 0.31 °C/W
RthCS (TO-247, TO-3P) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 14 A
ISM Repetitive 40 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr IF = 25A, 250 ns
QRM -di/dt = 100 A/μs 0.4 μC
IRM VR = 100V 5 A
TO-268 (IXFT) Outline
PLUS220SMD (IXFV_S) Outline
TO-247 (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
© 2006 IXYS All rights reserved
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 1. Output Characteristics
@ 25ºC
0
2
4
6
8
10
12
14
0123456789101112
V
DS
- Volts
I
D
- A m peres
V
GS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 2 5ºC
0
3
6
9
12
15
18
21
24
27
0 3 6 9 12 15 18 21 24 27 30
V
DS
- Volts
I
D
- A m peres
V
GS
= 10V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
0 2 4 6 8 10 12 14 16 18 20 22 24 26
V
DS
- Volts
I
D
- Am per es
V
GS
= 10V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 7A Value v s.
Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Cent igrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 14A
I
D
= 7A
Fig. 5. R
DS(on)
Normalized to I
D
= 7A Value vs .
Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 4 8 1216202428
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 125º C
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
2
4
6
8
10
12
14
16
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A m peres
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 7 . Input Admittance
0
2
4
6
8
10
12
14
16
18
20
3.5 4 4.5 5 5.5 6
V
GS
- Volts
I
D
- A m peres
T
J
= 125º C
25ºC
- 40ºC
Fig. 8 . Transconductance
0
3
6
9
12
15
18
21
24
27
30
02468101214161820
I
D
- Amperes
g
f s
- S iem ens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9 . Forward Voltage Drop of
Intrinsic Diode
0
5
10
15
20
25
30
35
40
45
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060
Q
G
- Nan oCoulombs
V
GS
- Volts
V
DS
=400V
I
D
= 7A
I
G
= 10mA
Fig. 1 1. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacit ance - PicoFar ad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 13. Maximum Transient Thermal
Resistance
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pu lse Widt h - Seconds
R
(th)JC
- ºC / W
IXYS REF: F_14N80P (6J) 5-02-06.xls
© 2006 IXYS All rights reserved
PLUS220 (IXFV) Outline
TO-3P-3L PACKAGE Outline
Ref: IXYS CO 0170 RA
1. GATE
2. DRAIN (COLLECTOR)
3. SOURCE (EMITTER)
4. DRAIN (COLLECTOR)
ALL MET AL AREA ARE TIN PLA TED.
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
