DRD (xxxx) W
COMPLEX ARRAY FOR RELAY DRIVERS
Features
• Epitaxial Planar Die Construction
• One Transistor and One Switching Diode in One Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.008 grams (approximate)
P/N R1 (NOM) R2 (NOM)
DRDNB16W
DRDPB16W
DRDNB26W
DRDPB26W
1K
1K
220
220
10K
10K
4.7K
4.7K
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J ⎯ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0° 8°
All Dimensions in mm
A
M
JL
D
B C
H
K
F
R1 R2 R1 R2
DRDN010W/
DRDN005W DRDP006W DRDNB16W/
DRDNB26W DRDPB16W/
DRDPB26W
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3) PD200 mW
Thermal Resistance, Junction to Ambient Air (Note 3) RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings, DRDN010W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 18 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Note 3) IC1000 mA
Maximum Ratings, DRDN005W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 4.0 V
Collector Current – Continuous (Note 3) IC500 mA
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
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Maximum Ratings, DRDP006W PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current (Note 3) IC-600 mA
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC 50 V
Input Voltage VIN -5 to +10 V
Output Current IC600 mA
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC 50 V
Input Voltage VIN -5 to +5 V
Output Current IC600 mA
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC -50 V
Input Voltage VIN +5 to -10 V
Output Current IC600 mA
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC -50 V
Input Voltage VIN +5 to -5 V
Output Current IC-600 mA
Maximum Ratings, Switching Diode @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current (Note 3) IFM 500 mA
Average Rectified Output Current (Note 3) IO250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s IFSM 4.0
2.0 A
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Electrical Characteristics, DRDN010W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain hFE 150 800 ⎯ IC = 100mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.5 V IC = 300mA, IB = 30mA
Collector-Base Breakdown Voltage V(BR)CBO 45 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 18 ⎯ V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICBO ⎯ 1 μA VCB = 40V, IE = 0
Emitter Cutoff Current IEBO ⎯ 1 μA VEB = 4V, IC = 0
Current Gain-Bandwidth Product fT100 ⎯ MHz VCE = 10V, IC = 50mA, f = 100MHz
Capacitance Cobo ⎯ 8 pF VCB = 10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDN005W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage V(BR)CBO 80 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 80 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 4.0 ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICBO ⎯ 100 nA VCB = 60V, IE = 0
VCB = 80V, IE = 0
Collector Cutoff Current ICES ⎯ 100 nA VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
DC Current Gain hFE 100 ⎯ ⎯ IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.25 V IC = 100mA, IB = 10mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ 1.2 V IC = 100mA, VCE = 1.0V
Current Gain-Bandwidth Product fT100 ⎯ MHz VCE = 2.0V, IC = 10mA,
f = 100MHz
Electrical Characteristics, DRDP006W PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain hFE 100 300 ⎯ IC = -150mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.4 V IC = -150mA, IB = -15mA
Collector-Base Breakdown Voltage V(BR)CBO -60 ⎯ V IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ V IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5 ⎯ V IE = -10μA, IC = 0
Collector Cutoff Current ICBO ⎯ -10 nA
VCB = -50V, IE = 0
Current Gain-Bandwidth Product fT200 ⎯ MHz VCE = -20V, IC = -50mA, f = 100MHz
Capacitance Cobo ⎯ 8 pF VCB = -10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Vl(off) 0.3 ⎯ ⎯ V VCC = 5V, IO = 100μA
Input Voltage Vl(on) ⎯ ⎯ 2.0 V VO = 0.3V, IO = 20mA
Output Voltage VO(on) ⎯ ⎯ 0.3V V IO/Il = 50mA/2.5mA
Input Current Il⎯ ⎯ 7.2 mA VI = 5V
Output Current IO(off) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V
DC Current Gain Gl56 ⎯ ⎯ ⎯ VO = 5V, IO = 50mA
Gain-Bandwidth Product fT⎯ 200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz
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Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Vl(off) 0.5 ⎯ ⎯ V VCC = 5V, IO = 100μA
Input Voltage Vl(on) ⎯ ⎯ 3.0 V VO = 0.3V, IO = 20mA
Output Voltage VO(on) ⎯ ⎯ 0.3V V IO/Il = 50mA/2.5mA
Input Current Il⎯ ⎯ 28 mA VI = 5V
Output Current IO(off) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V
DC Current Gain Gl47 ⎯ ⎯ ⎯ VO = 5V, IO = 50mA
Gain-Bandwidth Product fT⎯ 200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Vl(off) -0.3 ⎯ ⎯ V VCC = -5V, IO = -100μA
Input Voltage Vl(on) ⎯ ⎯ -2.0 V VO = -0.3V, IO = -20mA
Output Voltage VO(on) ⎯ ⎯ -0.3V V IO/Il = -50mA/-2.5mA
Input Current Il⎯ ⎯ -7.2 mA VI = -5V
Output Current IO(off) ⎯ ⎯ -0.5 μA VCC = -50V, VI = 0V
DC Current Gain Gl56 ⎯ ⎯ ⎯ VO = -5V, IO = -50mA
Gain-Bandwidth Product fT⎯ 200 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Vl(off) -0.5 ⎯ ⎯ V VCC = -5V, IO = -100μA
Input Voltage Vl(on) ⎯ ⎯ -3.0 V VO = -0.3V, IO = -20mA
Output Voltage VO(on) ⎯ ⎯ -0.3V V IO/Il = -50mA/-2.5mA
Input Current Il⎯ ⎯ -28 mA VI = -5V
Output Current IO(off) ⎯ ⎯ -0.5 μA VCC = -50V, VI = 0V
DC Current Gain Gl47 ⎯ ⎯ ⎯ VO = -5V, IO = -50mA
Gain-Bandwidth Product fT⎯ 200 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 4) V(BR)R 75 ⎯ ⎯ IR = 10μA
Forward Voltage VF
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Reverse Current (Note 4) IR⎯
2.5
50
30
25
μA
μA
μA
nA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
Total Capacitance CT⎯ 4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr ⎯ 4.0 ns IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Device Characteristics
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0
50
100
40 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1, Power Derating Curve (Total Device)
A
150
200
250
080 120 160
R = 625°C/W
θ
JA
1
1,000
100
0.0001 0.001 0.01 1 100.1
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (A)
Fig . 2 , Typical D C Cu r r ent G ai n
vs. Collector Current (DRDN010W)
C
V = 1.0V
CE
1
100
10
0.1 110 100
C
,
O
U
T
P
U
T
C
A
P
A
C
I
T
AN
C
E (p
F
)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 3, T ypical Output Capacitance vs.
Collector-Base V oltage (DRDN010W)
CB
f = 1MHz
1
10
1,000
100
0.0001 0.001 0.01 0.1 110
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (mV)
CE (SAT)
I , COLLECTOR CURRENT (A)
Fig. 4, Typical Collector Saturation Voltage vs.
Colle c tor Curr en t (DRDN010W )
C
I , COLLECTOR-BASE CURRENT (nA)
CBO
T , AMBIENT TEMPERA TURE (ºC)
Fig. 5, T ypical Collector-Cutoff Current
vs. Ambient T emperature (DRDN005W)
A
10
0.01
0.1
1
25 50 75 100 125
0.001 0.01 I BASE CURRENT (mA)
Fig. 6, Typical Collector Saturation Region
B,
(DRDN005W)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 110 100
V,
C
O
LLE
C
T
O
R
EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
110
100 1,000
V,
C
O
LLE
C
T
O
R
-E
M
I
T
T
E
R
SAT U RATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 7, T ypical Collector-Emitter Saturation V oltage
vs. Collector Current (DRDN005W)
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.050
0
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
I
I
C
B
= 10
1
10
1,000
10,000
100
110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 8, T ypical DC Current Gain vs.
Collector Current (DRDN005W)
C
T = -50°C
A
T = 25°C
A
T = 150°C
A
V = 5V
CE
0.1
0.2
0.1 110
V , BASE-EMI
100
T
T
E
R
O
N V
O
L
T
A
G
E (V)
BE(ON)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V = 5V
CE
I , COLLECTOR CURRENT (mA)
Fig. 9, T ypical Base-Emitter On Voltage
vs. Collector Current (DRDN005W)
C
T = -50°C
A
T = 25°C
A
T = 150°C
A
1
10
1,000
100
110
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig . 10, Typical Gain Bandw id t h Product vs.
Colle c tor Curr en t (DRDN00 5W)
C
0
0.1
0.2
0.3
0.6
0.5
0.4
110
100 1,000
I , COLLECTOR CURRENT (mA)
Fig.11, Typical Collector-Emitter Saturation V oltage vs.
Collector Current (DRDP006W)
C
V, C
O
LLECT
O
R
-EMITTE
R
SAT URATIO N VOLTAG E (V)
CE(SAT)
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
I , BASE CURRENT (mA)
Fig . 12, Typical Collector Saturat i on Region (DR DP00 6W)
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 1 10 100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
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1
10
1,000
100
110100
h, D
1,000
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 13, Typical DC Current Gain vs.
Collector Current (DRDP006W)
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 110 100
V , BASE- E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 14, T ypical Base-Emitter On Voltage
vs. Collector Current (DRDP006W)
C
V = 5V
CE
T = -50°C
A
1
10
1,000
100
110
100
f,
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig . 15, Typical Gain Ba ndwidt h Product vs.
Collector Current (DRDP006W)
C
V = 5V
CE
1.0
5.0
20
10
30
-0.1 -10
-1.0 -30
C
,
C
A
P
A
C
I
T
A
N
C
E (
p
F
)
V , REVERSE VOLTAGE (V)
Fig. 16, Typical Capacitance (DRDP006W)
R
C
ibo
f = 1MHz
10
100
1,000
1
0.1 01.61.20.4 0.8
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
V , IN STANTA NEO U S F O RWARD VOLTAG E (V)
Fig. 17, T ypical Forward Characteristics (Switching Diode)
F
T = -40ºC
A
0.1
1
10
100
1,000
10,000
020 40 60 80 100
V , REVERSE VOLTAGE (V)
Fig. 18, Typical Reverse Characteristics (Switching Diode)
R
I, INS
T
AN
T
ANE
O
U
S
R
EVE
R
SE
C
U
R
R
EN
T
(nA)
R
T = 125ºC
A
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0
0.5
1
2.5
2
1.5
3
0102030 40
C
,
T
O
T
AL
C
A
P
A
C
I
T
A
N
C
E (pF)
T
V , REVERSE VOLTAGE (V)
Fig. 19, Typical Capacitance vs. Reverse Voltage
(Sw itching Diode)
R
f = 1MHz
Ordering Information (Note 5)
Device Packaging Shipping
DRDN010W-7 SOT-363 3000/Tape & Reel
DRDP006W-7 SOT-363 3000/Tape & Reel
DRDNB16W-7 SOT-363 3000/Tape & Reel
DRDNB26W-7 SOT-363 3000/Tape & Reel
DRDPB16W-7 SOT-363 3000/Tape & Reel
DRDPB26W-7 SOT-363 3000/Tape & Reel
DRDN005W-7 SOT-363 3000/Tape & Reel
Not es: 5. For pa ckagin g details, go to our website at htt p:/ /www.d iodes.com/datasheets/ap02007.pdf.
Marking Information
RDxx = Product Type Marking Code:
RD01 = DRDN010W
RD02 = DRDP006W
RD03 = DRDNB16W
RD04 = DRDNB26W
RD05 = DRDPB16W
RD06 = DRDPB26W
RD07 = DRDN005W
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
RDxx
YM
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
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Sample Applications
Relay
DRDP006W
R1
R2
RL
Relay
DRDNB16W
1k
Ω
10k
Ω
RL
Relay
DRDN010W/
DRDN005W
R1
R2 RL
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Application Example: DRDN010W/DRDN005W c urrent
sink configuration, bias resistors not included Application Example: DRDP006W current source
configuration, bias resistors not included Application Example: DRDNB16W current
sink configuration with built-in bias resistors
Relay
DRDNB26W
220
Ω
4.7k
Ω
RL
Relay
DRDPB26W
220
Ω
4.7k
Ω
RL
Relay
DRDPB16W
1k
Ω
10k
Ω
RL
Application Example: DRDNB26W current sink
configuration with built-in bias resistors (low R1) Application Example: DRDPB16W current source
configuration with built-in bias resistors Application Example: DRDPB26W current source
configuration with built-in bias resistors (low R1)
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
X
Z
Y
C
EE
G
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C 1.9
E 0.65
