DATA SH EET
Product specification
File under Integrated Circuits, IC04 January 1995
INTEGRATED CIRCUITS
HEF4060B
MSI
14-stage ripple-carry binary
counter/divider and oscillator
For a complete data sheet, please also download:
•The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
•The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
January 1995 2
Philips Semiconductors Product specification
14-stage ripple-carry binary
counter/divider and oscillator HEF4060B
MSI
DESCRIPTION
The HEF4060B is a 14-stage ripple-carry binary
counter/divider and oscillator with three oscillator terminals
(RS, RTC and CTC), ten buffered outputs (O3to O9and
O11 to O13) and an overriding asynchronous master reset
input (MR). The oscillator configuration allows design of
either RC or crystal oscillator circuits. The oscillator may
be replaced by an external clock signal at input RS. The
counter advances on the negative-going transition of RS.
A HIGH level on MR resets the counter (O3to O9and
O11 to O13 = LOW), independent of other input conditions.
Schmitt-trigger action in the clock input makes the circuit
highly tolerant to slower clock rise and fall times.
Fig.1 Functional diagram.
Fig.2 Pinning diagram.
PINNING
FAMILY DATA, IDD LIMITS category MSI
See Family Specifications
MR master reset
RS clock input/oscillator pin
RTC oscillator pin
CTC external capacitor connection
O3to O9counter outputs
O11 to O13
HEF4060BP(N): 16-lead DIL; plastic (SOT38-1)
HEF4060BD(F): 16-lead DIL; ceramic (cerdip) (SOT74)
HEF4060BT(D): 16-lead SO; plastic (SOT109-1)
( ): Package Designator North America
January 1995 3
Philips Semiconductors Product specification
14-stage ripple-carry binary counter/divider
and oscillator HEF4060B
MSI
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Fig.3 Logic diagram.
January 1995 4
Philips Semiconductors Product specification
14-stage ripple-carry binary counter/divider
and oscillator HEF4060B
MSI
AC CHARACTERISTICS
VSS = 0 V; Tamb =25°C; CL= 50 pF; input transition times ≤20 ns
VDD
VSYMBOL MIN. TYP. MAX. TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
RS →O35 210 420 ns 183 ns +(0,55 ns/pF) CL
HIGH to LOW 10 tPHL 80 160 ns 69 ns +(0,23 ns/pF) CL
15 50 100 ns 42 ns +(0,16 ns/pF) CL
5 210 420 ns 183 ns +(0,55 ns/pF) CL
LOW to HIGH 10 tPLH 80 160 ns 69 ns +(0,23 ns/pF) CL
15 50 100 ns 42 ns +(0,16 ns/pF) CL
On→On+152550ns
HIGH to LOW 10 tPHL 10 20 ns
15 6 12 ns
52550ns
LOW to HIGH 10 tPLH 10 20 ns
15 6 12 ns
MR →On5 100 200 ns 73 ns +(0,55 ns/pF) CL
HIGH to LOW 10 tPHL 40 80 ns 29 ns +(0,23 ns/pF) CL
15 30 60 ns 22 ns +(0,16 ns/pF) CL
Output transition 5 60 120 ns 10 ns +(1,0 ns/pF) CL
times 10 tTHL 30 60 ns 9 ns +(0,42 ns/pF) CL
HIGH to LOW 15 20 40 ns 6 ns +(0,28 ns/pF) CL
5 60 120 ns 10 ns +(1,0 ns/pF) CL
LOW to HIGH 10 tTLH 30 60 ns 9 ns +(0,42 ns/pF) CL
15 20 40 ns 6 ns +(0,28 ns/pF) CL
Minimum clock pulse 5 120 60 ns
width input RS 10 tWRSH 50 25 ns
HIGH 15 30 15 ns
Minimum MR pulse 5 50 25 ns
width; HIGH 10 tWMRH 30 15 ns
15 20 10 ns
Recovery time 5 160 80 ns
for MR 10 tRMR 80 40 ns
15 60 30 ns
Maximum clock pulse 5 4 8 MHz
frequency input RS 10 fmax 10 20 MHz
15 15 30 MHz
January 1995 5
Philips Semiconductors Product specification
14-stage ripple-carry binary counter/divider
and oscillator HEF4060B
MSI
AC CHARACTERISTICS
VSS = 0 V; Tamb =25°C; input transition times ≤20 ns
Notes
1. where:
fi= input frequency (MHz)
fo= output frequency (MHz)
CL= load capacitance (pF)
VDD = supply voltage (V)
Ct= timing capacitance (pF)
fosc = oscillator frequency (MHz)
RC oscillator
VDD
VTYPICAL FORMULA FOR P (µW)(1)
Dynamic power dissipation 5 700 fi+foCLVDD2
per package 10 3 300 fi+foCLVDD2
(P) 15 8 900 fi+foCLVDD2
Total power dissipation 5 700 fosc +foCLVDD2+2CtVDD2fosc +690 VDD
when using the 10 3 300 fosc +foCLVDD2+2CtVDD2fosc +6 900 VDD
on-chip oscillator (P) 15 8 900 fosc +foCLVDD2+2CtVDD2fosc +22 000 VDD
Fig.4 External component connection for RC oscillator.
Typical formula for oscillator frequency:
fosc 1
2,3 RtCt
××
---------------------------------=
January 1995 6
Philips Semiconductors Product specification
14-stage ripple-carry binary counter/divider
and oscillator HEF4060B
MSI
Timing component limitations
The oscillator frequency is mainly determined by
RtCt, provided Rt<< R2 and R2C2 << RtCt. The function
of R2 is to minimize the influence of the forward voltage
across the input protection diodes on the frequency. The
stray capacitance C2 should be kept as small as possible.
In consideration of accuracy, Ctmust be larger than the
inherent stray capacitance. Rtmust be larger than the
LOCMOS ‘ON’ resistance in series with it, which typically
is 500 Ωat VDD = 5 V, 300 Ωat VDD = 10 V and 200 Ωat
VDD = 15 V.
The recommended values for these components to
maintain agreement with the typical oscillation formula are:
Ct≥100 pF, up to any practical value,
10 kΩ≤R
t≤1 MΩ.
Typical crystal oscillator circuit
In Fig.5, R2 is the power limiting resistor. For starting and
maintaining oscillation a minimum transconductance is
necessary.
Fig.5 External component connection for crystal
oscillator.
Fig.6 Test set-up for measuring forward transconductance gfs =di
o
/dviat vois constant (see also graph Fig.7);
MR = LOW.
January 1995 7
Philips Semiconductors Product specification
14-stage ripple-carry binary counter/divider
and oscillator HEF4060B
MSI
Fig.7 Typical forward transconductance gfs as a
function of the supply voltage at Tamb = 25 °C.
A: average
B: average + 2 s,
C: average −2 s, where ‘s’ is the observed standard deviation.
Fig.8 RC oscillator frequency as a function of
Rtand Ctat VDD = 5 to 15 V; Tamb =25°C.
Ctcurve at Rt= 100 kΩ; R2 = 470 kΩ.
Rtcurve at Ct= 1 nF; R2 = 5 Rt.
Fig.9 Oscillator frequency deviation (∆fosc) as a function of ambient temperature; referenced at: fosc at
Tamb =25°C and VDD = 10 V.
___ Rt= 100 kΩ; Ct= 1 nF; R2 = 0.
--- R
t= 100 kΩ;C
t= 1 nF; R2 = 300 kΩ.
