TSM3900D
20V Dual N-Channel MOSFET
1/6 Version: B07
SOT-26
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No.
Package
Packing
TSM3900DCX6 RF
SOT-26
T&R
Absolute Maximum Rating (Ta = 25ºC unless otherwise noted)
Parameter
Limit
Unit
Drain-Source Voltage
20
V
Gate-Source Voltage
±8
V
Continuous Drain Current
2
A
Pulsed Drain Current
8
A
Continuous Source Current (Diode Conduction)a,b
1.6
A
Ta = 25ºC
2.0
Maximum Power Dissipation
Ta = 70ºC
1.3
W
Operating Junction Temperature
+150
oC
Operating Junction and Storage Temperature Range
-55 to +150
oC
Thermal Performance
Parameter
Limit
Unit
Junction to Case Thermal Resistance
30
oC/W
Junction to Ambient Thermal Resistance (PCB mounted)
80
oC/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
ID (A)
55 @ VGS = 4.5V
70 @ VGS = 2.5V
20
110 @ VGS = 1.8V
Block Diagram
Dual N-Channel MOSFET
Pin Definition:
1. Gate 1
6. Drain 1
2. Source 2
5. Source 1
3. Gate 2
4. Drain 2
TSM3900D
20V Dual N-Channel MOSFET
2/6 Version: B07
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.65
0.95
1.2
V
Gate Body Leakage
VGS = ±8V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
IDSS
--
--
1.0
uA
On-State Drain Current
VDS ≥ 5V, VGS = 4.5V
ID(ON)
5
--
--
A
VGS = 4.5V, ID = 2.0A
--
45
55
VGS = 2.5V, ID = 1.5A
--
50
70
Drain-Source On-State Resistance
VGS = 1.8V, ID = 1.0A
RDS(ON)
--
80
110
mΩ
Forward Transconductance
VDS = 5V, ID = 2.4A
gfs
--
5
--
S
Diode Forward Voltage
IS = 1.6A, VGS = 0V
VSD
--
0.79
1.1
V
Dynamicb
Total Gate Charge
Qg
--
3.69
--
Gate-Source Charge
Qgs
--
0.70
--
Gate-Drain Charge
VDS = 10V, ID = 2.4A,
VGS = 4.5V
Qgd
--
1.06
--
nC
Input Capacitance
Ciss
--
427.12
--
Output Capacitance
Coss
--
80.56
--
Reverse Transfer Capacitance
VDS = 10V, VGS = 0V,
f = 1.0MHz
Crss
--
57
--
pF
Switchingc
Turn-On Delay Time
td(on)
--
6.16
--
Turn-On Rise Time
tr
--
7.56
--
Turn-Off Delay Time
td(off)
--
16.61
--
Turn-Off Fall Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
tf
--
4.07
--
nS
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
TSM3900D
20V Dual N-Channel MOSFET
3/6 Version: B07
Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM3900D
20V Dual N-Channel MOSFET
4/6 Version: B07
Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM3900D
20V Dual N-Channel MOSFET
5/6 Version: B07
SOT-26 Mechanical Drawing
Marking Diagram
0D
= Device Code
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
SOT-26 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
TYP
MAX
MIN
TYP
MAX
A
0.95 BSC
0.0374 BSC
A1
1.9 BSC
0.0748 BSC
B
2.60
2.80
3.00
0.1024
0.1102
0.1181
C
1.40
1.50
1.70
0.0551
0.0591
0.0669
D
2.80
2.90
3.10
0.1101
0.1142
0.1220
E
1.00
1.10
1.20
0.0394
0.0433
0.0472
F
0.00
--
0.10
0.00
0.0039
G
0.35
0.40
0.50
0.0138
0.0157
0.0197
H
0.10
0.15
0.20
0.0039
0.0059
0.0079
I
0.30
--
0.60
0.0118
--
0.0236
J
5º
--
10º
5º
--
10º
TSM3900D
20V Dual N-Channel MOSFET
6/6 Version: B07
Notice
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