TSM3900D 20V Dual N-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS (V) RDS(on)(m) 20 Features ID (A) 55 @ VGS = 4.5V 2.0 70 @ VGS = 2.5V 1.5 110 @ VGS = 1.8V 1.0 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM3900DCX6 RF SOT-26 T&R Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V ID 2 A IDM 8 A IS 1.6 A Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation a,b Ta = 25C PD Ta = 70C Operating Junction Temperature W 1.3 +150 o C TJ, TSTG -55 to +150 o C Symbol Limit TJ Operating Junction and Storage Temperature Range 2.0 Thermal Performance Parameter Junction to Case Thermal Resistance RJC Junction to Ambient Thermal Resistance (PCB mounted) RJA Unit 30 o C/W 80 o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. 1/6 Version: B07 TSM3900D 20V Dual N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.65 0.95 1.2 V Gate Body Leakage VGS = 8V, VDS = 0V IGSS -- -- 100 nA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1.0 uA On-State Drain Current VDS 5V, VGS = 4.5V ID(ON) A VGS = 4.5V, ID = 2.0A Drain-Source On-State Resistance VGS = 2.5V, ID = 1.5A RDS(ON) VGS = 1.8V, ID = 1.0A 5 -- -- -- 45 55 -- 50 70 -- 80 110 m Forward Transconductance VDS = 5V, ID = 2.4A gfs -- 5 -- S Diode Forward Voltage IS = 1.6A, VGS = 0V VSD -- 0.79 1.1 V Qg -- 3.69 -- Qgs -- 0.70 -- Qgd -- 1.06 -- Ciss -- 427.12 -- Coss -- 80.56 -- Crss -- 57 -- td(on) -- 6.16 -- tr -- 7.56 -- td(off) -- 16.61 -- -- 4.07 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, ID = 2.4A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 10, ID = 1A, VGEN = 4.5V, RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 nS Version: B07 TSM3900D 20V Dual N-Channel MOSFET Electrical Characteristics Curve (Ta = 25C, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: B07 TSM3900D 20V Dual N-Channel MOSFET Electrical Characteristics Curve (Ta = 25C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: B07 TSM3900D 20V Dual N-Channel MOSFET SOT-26 Mechanical Drawing DIM SOT-26 DIMENSION MILLIMETERS INCHES MIN MIN TYP MAX TYP A 0.95 BSC A1 MAX 0.0374 BSC 1.9 BSC 0.0748 BSC 0.1102 0.1181 B 2.60 2.80 3.00 0.1024 C 1.40 1.50 1.70 0.0551 0.0591 0.0669 D 2.80 2.90 3.10 0.1101 0.1142 0.1220 E 1.00 1.10 1.20 0.0394 0.0433 0.0472 F 0.00 -- 0.10 0.00 G 0.35 0.40 0.50 0.0138 0.0157 0.0039 0.0197 H 0.10 0.15 0.20 0.0039 0.0059 0.0079 I 0.30 -- 0.60 0.0118 -- 0.0236 J 5 -- 10 5 -- 10 Marking Diagram 0D = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: B07 TSM3900D 20V Dual N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B07