Rhopoint Components Ltd
Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255
Germany: +49 (0) 692 199 8606 Fax: +49 (0) 692 199 8595
Email: sales@rhopointcomponents.com Website: www.rhopointcomponents.com
NPN Silicon Phototransistor
Type OT 410D and OT 410T
The OT410 sensors consist
of a high gain NPN silicon
photo transistor mounted in
hermetically sealed TO-46
package. These sensors are
ideally suited for hostile
environment operation. The
OT410D features a domed
lens and the OT410T a flat
window.
•TO - 46 Package
•Hermetically Sealed Device ideal for hostile
environments
•High Sensitivity
Dimensions in mm
Specifications:
Operating Temperature Range -55°C to 125°C
PARAMETERS SYMBOL MIN. TYP MAX. UNITS
Light Current OT 410D(T)-1 3 (1.5) mA
H = 1mW/cm2OT 410D(T)-2 IC(ON) 5 (2) 15 (6) mA
OT 410D(T)-3 12 (4) mA
Dark Current VCE = 10V, H = 0 ICED 40 nA
Collector Emitter Voltage VCED 35 V
Emitter Collector Voltage VECD 6V
Saturation Voltage IC= 1mA VCE(SAT) 0.50 V
Angular Response OT 410D 20 Deg.
OT 410T Φ80 Deg.
Rise or Fall Time OT 410D-1 6µS
RL= 100ΩVCC = 10V OT 410D-6 tr
, t
f8µS
