NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window. * TO - 46 Package * Hermetically Sealed Device ideal for hostile environments High Sensitivity * Dimensions in mm Specifications: Operating Temperature Range PARAMETERS -55C to 125C SYMBOL MIN. Light Current OT 410D(T)-1 H = 1mW/cm2 OT 410D(T)-2 I C(ON) OT 410D(T)-3 Collector Emitter Voltage V CED 35 Emitter Collector Voltage V ECD 6 Saturation Voltage IC = 1mA V CE(SAT) OT 410D OT 410T Rise or Fall Time OT 410D-1 RL = 100 V CC = 10V OT 410D-6 15 (6) 12 (4) I CED t r, tf UNITS mA 5 (2) Dark Current VCE = 10V, H = 0 Angular Response TYP MAX. 3 (1.5) mA mA 40 nA V V 0.50 V 20 Deg. 80 Deg. 6 S 8 S Rhopoint Components Ltd Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 Germany: +49 (0) 692 199 8606 Fax: +49 (0) 692 199 8595 Email: sales@rhopointcomponents.com Website: www.rhopointcomponents.com