ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 4500
V
IC = 800
A
Doc. No. 5SYA1402-01 Mar. 12
• Ultra low-loss, rugged SPT+ chip-set
• Smooth switching SPT+ chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V 4500
V
DC collector current IC Tc = 85 °C 800 A
Peak collector current ICM tp = 1 ms, Tc = 85 °C 1600
A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 7200
W
DC forward current IF 800 A
Peak forward current IFRM 1600
A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 6000
A
IGBT short circuit SOA tpsc VCC = 3400 V, VCEM CHIP ≤ 4500 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 7400
V
Junction temperature Tvj 150 °C
Junction operating temperature Tvj(op) -50 125 °C
Case temperature Tc -50 125 °C
Storage temperature Tstg -50 125 °C
Ms Base-heatsink, M6 screws 4 6
Mt1 Main terminals, M8 screws 8 10
Mounting torques 2) Mt2 Auxiliary terminals, M4 screws 2 3 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB HiPak
TM
IGBT Module
5SNA 0800J450300
5SNA 0800J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1402-01 Mar 12 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 4500
V
Tvj = 25 °C 2.6 V
Collector-emitter 4)
saturation voltage VCE sat IC = 800 A, VGE = 15 V Tvj = 125 °C 3.55 V
Tvj = 25 °C 8 mA
Collector cut-off current ICES VCE = 4500 V, VGE = 0 V Tvj = 125 °C 80 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 160 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 800 A, VCE = 2800 V,
VGE = -15 V .. 15 V 5.91 µC
Input capacitance Cies 80
Output capacitance Coes 4.01
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 1.72 nF
Tvj = 25 °C 870
Turn-on delay time td(on) Tvj = 125 °C 860 ns
Tvj = 25 °C 150
Rise time tr
VCC = 2800 V,
IC = 800 A,
RG = 2.2 Ω, CGE = 150 nF,
VGE = ±15 V,
Lσ = 150 nH, inductive load
Tvj = 125 °C 170 ns
Tvj = 25 °C 2070
Turn-off delay time td(off) Tvj = 125 °C 2220
ns
Tvj = 25 °C 510
Fall time tf
VCC = 2800 V,
IC = 800 A,
RG = 2.2 Ω, CGE = 150 nF,
VGE = ±15 V,
Lσ = 150 nH, inductive load
Tvj = 125 °C 600 ns
Tvj = 25 °C 1850
Turn-on switching energy Eon
VCC = 2800 V,
IC = 800 A,
RG = 2.2 Ω, CGE = 150 nF,
VGE = ±15 V,
Lσ = 150 nH, inductive load
Tvj = 125 °C 2580
mJ
Tvj = 25 °C 3150
Turn-off switching energy Eoff
VCC = 2800 V,
IC = 800 A,
RG = 2.2 Ω, CGE = 150 nF,
VGE = ±15 V,
Lσ = 150 nH, inductive load
Tvj = 125 °C 3780
mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 3400 V, VCEM CHIP ≤ 4500 V 3500
A
Module stray inductance Lσ CE 27 nH
TC = 25 °C 0.11
Resistance, terminal-chip RCC’+EE’ T
C
= 125 °C 0.15 mΩ
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level
5SNA 0800J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1402-01 Mar 12 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 3.2
Forward voltage 6) VF IF = 800 A Tvj = 125 °C 3.5 V
Tvj = 25 °C 1110
Reverse recovery current Irr Tvj = 125 °C 1180
A
Tvj = 25 °C 730
Recovered charge Qrr Tvj = 125 °C 1120
µC
Tvj = 25 °C 1150
Reverse recovery time trr Tvj = 125 °C 1650
ns
Tvj = 25 °C 1140
Reverse recovery energy Erec
VCC = 2800 V,
IF = 800 A,
VGE = ±15 V,
RG = 2.2 Ω,
CGE = 150 nF,
Lσ = 150 nH
inductive load
Tvj = 125 °C 1880
mJ
5) Characteristic values according to IEC 60747 – 2
6) Forward voltage is given at chip level
Package properties 7)
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.014
K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE
0.028
K/W
IGBT thermal resistance 2)
case to heatsink Rth(c-s)IGBT
IGBT per switch, λ grease = 1W/m x K 0.013
K/W
Diode thermal resistance 7)
case to heatsink Rth(c-s)DIODE
Diode per switch, λ grease = 1W/m x K 0.027
K/W
Partial discharge extinction
voltage Ve f = 50 Hz, QPD ≤ 10pC (acc. to IEC 61287)
3500
V
Comparative tracking index CTI ≥ 600
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties 7)
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 130 x 140 x 48 mm
Term. to base:
40
Clearance distance in air da according to IEC 60664-1
and EN 50124-1 Term. to term:
26 mm
Term. to base:
64
Surface creepage distance ds according to IEC 60664-1
and EN 50124-1 Term. to term:
56 mm
Mass m 1150
g
7) Package and mechanical properties according to IEC 60747 – 15
5SNA 0800J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1402-01 Mar 12 page 4 of 9
Electrical configuration
5 7
3
2
146
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
5SNA 0800J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1402-01 Mar 12 page 5 of 9
0
200
400
600
800
1000
1200
1400
1600
0123456
VCE [V]
IC [A]
125 °C
25 °C
VGE = 15V
0
200
400
600
800
1000
1200
1400
1600
012345678910111213
VGE [V]
IC [A]
VCE = 20 V
125 °C
25 °C
Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level
0
200
400
600
800
1000
1200
1400
1600
012345
VCEsat [V]
IC [A]
9 V
11 V
13 V
15 V
17 V
Tvj = 25 °C
0
200
400
600
800
1000
1200
1400
1600
0123456
VCEsat [V]
IC [A]
9 V
11 V
13 V
15 V
17 V
Tvj = 125 °C
Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level
5SNA 0800J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1402-01 Mar 12 page 6 of 9
0
1
2
3
4
5
6
7
8
0200 400 600 800 1000120014001600
IC [A]
Eon, Eoff [J]
VCC = 2800 V
VGE = ±15 V
RG = 2.2 ohm
CGE = 150 nF
Tvj = 125 °C
Lσ = 150 nH
Eon
Eoff
E
sw
[J] = 3.9 x 10
-6
x I
C2
+ 2.9 x10
-3
x I
C
+ 1.52
0
1
2
3
4
5
6
7
8
012345678910 11
RG [ohm]
Eon, Eoff [J]
VCC = 2800 V
IC = 800 A
VGE = ±15 V
CGE = 150 nF
Tvj = 125 °C
Lσ = 150 nH
Eon
Eoff
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.01
0.1
1
10
0200 400 600 8001000120014001600
IC [A]
td(on), tr, td(off), tf [µs]
VCC = 2800 V
VGE = ±15 V
RG = 2.2 ohm
CGE = 150 nF
Tvj = 125 °C
Lσ = 150 nH
td(on)
td(off)
tr
tf
0.01
0.1
1
10
0 1 2 3 4 5 6 7 8 9 10 11
RG [ohm]
td(on), tr, td(off), tf [µs]
VCC = 2800 V
IC = 800 A
VGE = ±15 V
CGE = 150 nF
Tvj = 125 °C
Lσ = 150 nH
td(on)
td(off)
tf
t
r
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
5SNA 0800J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1402-01 Mar 12 page 7 of 9
1
10
100
1000
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
Cies
Coes
Cres
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
0
5
10
15
20
0 1 2 3 4 5 6
Qg [µC]
VGE [V]
IC = 800 A
Tvj = 25 °C
VCC = 3600 V
VCC = 2800 V
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
0.5
1
1.5
2
2.5
01000 2000 3000 4000 5000
VCE [V]
ICpulse / IC
Chip
Module
VCC ≤ 3400 V, Tvj = 125 °C, VGE = ±15 V
RG = 2.2 ohm, CGE = 150 nF, Lσ ≤ 150 nH
Fig. 11 Turn-off safe operating area (RBSOA)
5SNA 0800J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1402-01 Mar 12 page 8 of 9
0
500
1000
1500
2000
2500
3000
0200 400 600 8001000120014001600
IF [A]
Erec [mJ], Irr [A], Qrr [µC]
VCC = 2800 V
VGE = ±15 V
RG = 2.2 ohm
CGE = 150 nF
Tvj = 125 °C
Lσ = 150 nH
Erec
Irr
Qrr
E
rec
[mJ] = -7 x 10
-4
x I
F2
+ 2.54 x I
F
+ 294
0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5 6 7
di/dt [A/µs]
Erec [mJ], Irr [A], Qrr [µC]
VCC = 2800 V
IF = 800 A
VGE = ±15 V
CGE = 150 nF
Tvj = 125 °C
Lσ = 150 nH
Erec
Qrr
Irr
R
G
= 6.8 ohm
R
G
= 4.7 ohm
R
G
= 3.3 ohm
R
G
= 2.2 ohm
R
G
= 1.5 ohm
R
G
= 1 ohm
R
G
= 10 ohm
Fig. 12 Typical reverse recovery characteristics
vs forward current Fig. 13 Typical reverse recovery characteristics
vs di/dt
0
200
400
600
800
1000
1200
1400
1600
012345
VF [V]
IF [A]
125 °C
25 °C
0
200
400
600
800
1000
1200
1400
1600
1800
0 1000 2000 3000 4000 5000
VR [V]
IR [A]
VCC ≤ 3400 V
di/dt ≤ 4400 A/µs
Tvj = 125 °C
Lσ ≤ 150 nH
Fig. 14 Typical diode forward characteristics,
chip level Fig. 15 Safe operating area diode (SOA)
5SNA 0800J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1402-01 Mar 12
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth ∑
=
i
τ
i 1 2 3 4 5
Ri(K/kW) 9.54 3.17 1.56
IGBT
τi(ms) 193 21.4 2.78
Ri(K/kW) 18.7 6.56 3.23
DIODE
τi(ms) 192 22.6 3.1
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Zth(j-c) [K/W ] IGBT, DIODE
Zth(j-c) IGBT
Zth(j-c) Diode
Fig. 16 Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043 Load – cycle capability of HiPaks
• 5SYA 2045 Thermal runaway during blocking
• 5SYA 2058 Surge currents for IGBT diodes
• 5SYA 2093 Thermal design of IGBT Modules
• 5SZK 9120 Specification of environmental class for HiPak
