All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 10 Rev. 04, 2008-03-04
PTFA240451E
Description
The PTFA240451E is a thermally-enhanced, 45-watt, internally-
matched GOLDMOS® FET intended for CDMA2000 and WiMAX
applications from 2420 to 2480 MHz. Thermally-enhanced packaging
provides the coolest operation available. Full gold metallization
ensures excellent device lifetime and reliability.
PTFA240451E
Package H-30265-2
Thermally-Enhanced High Power RF LDMOS FET
45 W, 2420 – 2480 MHz
Three-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
0
5
10
15
20
25
30
35
40
45
30 32 34 36 38 40 42
Output Power, Avg. (dBm)
Drain Efficiency (%)
-74
-70
-66
-62
-58
-54
-50
-46
-42
-38
Adj. Ch. Power Ratio (dBc)
Efficiency
ACP Up
ACP Low
ALT Up
Efficiency
RF Characteristics
3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz
bandwidth at ƒC ± 2.135 MHz offset
Characteristic Symbol Min Typ Max Unit
Gain Gps —14 —dB
Drain Efficiency ηD—31 —%
Adjacent Channel Power Ratio ACPR —–45 —dBc
Features
•Thermally-enhanced, lead-free and
RoHS-compliant packaging
•Broadband internal matching
•Typical two-carrier CDMA performance at 2450
MHz, 28 V
- Average output power = 10 W
- Linear Gain = 14 dB
- Efficiency = 27%
- Adjacent channel power = –45 dBc
•Typical CW performance, 2450 MHz, 28 V
- Output power at P–1dB = 50 W
- Efficiency = 54%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
*See Infineon distributor for future availability.
PTFA240451E
Data Sheet 2 of 10 Rev. 04, 2008-03-04
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 2480 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 13.5 14 —dB
Drain Efficiency ηD39 40 —%
Intermodulation Distortion IMD —–30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.17 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD196 W
Above 25°C derate by 1.12 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 0.89 °C/W
Ordering Information
Type and Version Package Outline Package Description Marking
PTFA240451E V1 H-30265-2 Thermally-enhanced slotted flange, single-ended PTFA240451E
PTFA240451E
Data Sheet 3 of 10 Rev. 04, 2008-03-04
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 450 mA, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz
-80
-70
-60
-50
-40
-30
-20
30 32 34 36 38 40 42 44
Output Power, Avg. (dBm)
IMD (dBc)
3rd Order
7th Order
5th Order
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
VDD = 28 V, IDQ = 450 mA
12
13
14
15
16
2420 2430 2440 2450 2460 2470 2480
Frequency (MHz)
Gain (dB)
49
51
53
55
57
Efficiency (%), Output Power (W)
Output Power
Efficiency
Gain
Typical Performance (data taken in a production test fixture)
2-Tone Broadband Performance
VDD = 28 V, IDQ = 450 mA, POUT Avg. = 43.52 dBm
0
10
20
30
40
50
2400 2420 2440 2460 2480 2500
Frequency (MHz)
Gain (dB), Efficiency (%)
-30
-25
-20
-15
-10
-5
Return Loss (dB)
Gain
Return Loss
Efficiency
IM3 vs. Output Power for Selected Biases
VDD = 28 V, ƒ1 = 2449 MHz, ƒ2 = 2450 MHz
-70
-60
-50
-40
-30
-20
30 32 34 36 38 40 42 44
Output Power, Avg. (dBm)
IMD (dBc)
337 mA
450 mA
562 mA
PTFA240451E
Data Sheet 4 of 10 Rev. 04, 2008-03-04
Output Power
(at 1 dB Compression)
vs. Supply Voltage
IDQ = 450 mA, ƒ = 2450 MHz
45
46
47
48
49
24 26 28 30 32
Supply Voltage (V)
Output Power (dBm)
IS-95 CDMA Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
0
5
10
15
20
25
30
35
30 32 34 36 38 40 42
Output Power, Avg. (dBm)
Drain Efficiency (%)
-75
-70
-65
-60
-55
-50
-45
-40
-35
Adj. Channel Power Ratio (dBc)
TCASE = 25°C
TCASE = 90°C
Efficiency
ACPR ƒC+1.98 MHz
ACP ƒC–0.75 MHz
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
10
11
12
13
14
15
16
30 34 38 42 46 50
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
Drain Efficiency (%)
Efficiency
Gain
Power Sweep
VDD = 28 V, ƒ = 2450 MHz
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
30 32 34 36 38 40 42 44 46 48
Output Power (dBm)
Power Gain (dB)
IDQ = 675 mA
IDQ = 225 mA
IDQ = 450 mA
Typical Performance (cont.)
PTFA240451E
Data Sheet 5 of 10 Rev. 04, 2008-03-04
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
2.09 A
2.78 A
3.48 A
4.17 A
Typical Performance (cont.)
WiMAX Performance
VDD = 28 V, IDQ = 0.45 A,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
0
6
12
18
24
30
36
15 20 25 30 35 40 45
Output Power (dBm)
Efficiency (%)
-45
-40
-35
-30
-25
-20
-15
EVM (dBc)
Efficiency
ƒ = 2.62 GHz
ƒ = 2.68 GHz
ƒ = 2.65 GHz
WiMAX Performance
VDD = 28 V, ƒ = 2450 MHz
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-45
-40
-35
-30
-25
-20
-15
15 20 25 30 35 40 45
Output Power (dBm)
EVM (dB)
IDQ = 0.28 A
IDQ = 0.67 A
IDQ = 0.45 A
PTFA240451E
Data Sheet 6 of 10 Rev. 04, 2008-03-04
0.1
0.3
0.5
0.2
0.4
0.1
0
.2
-
W
AV
E
L
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
2400 MHz
2500 MHz
Z Source
2400 MHz
2500 MHz
Z Load
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2400 22.12 –18.74 6.98 –2.35
2420 20.27 –18.71 6.73 –2.14
2450 18.30 –19.18 6.61 –2.17
2480 15.24 –19.95 6.17 –2.32
2500 13.45 –20.19 5.92 –2.41
Z0 = 50 Ω
See next page for circuit information
PTFA240451E
Data Sheet 7 of 10 Rev. 04, 2008-03-04
Reference Circuit
Reference circuit schematic for ƒ = 2480 MHz
Circuit Assembly Information
DUT PTFA240451E LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 2480 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.102 λ, 50.0 Ω6.68 x 1.40 0.263 x 0.055
l20.050 λ, 44.0 Ω3.12 x 1.78 0.123 x 0.070
l30.094 λ, 44.0 Ω6.10 x 1.78 0.240 x 0.070
l40.148 λ, 64.0 Ω9.86 x 0.89 0.388 x 0.035
l50.016 λ, 44.0 Ω1.04 x 1.78 0.041 x 0.070
l60.021 λ, 14.7 Ω1.35 x 7.62 0.053 x 0.300
l70.080 λ, 8.2 Ω4.78 x 14.86 0.188 x 0.585
l8, l90.295 λ, 50.0 Ω19.30 x 1.40 0.760 x 0.055
l10 0.049 λ, 6.5 Ω2.84 x 19.05 0.112 x 0.750
l11 (taper) 0.079 λ, 6.5 Ω / 50.0 Ω5.16 x 19.05 / 1.40 0.203 x 0.750 / 0.055
l12 0.045 λ, 50.0 Ω2.95 x 1.40 0.116 x 0.055
l13 0.117 λ, 50.0 Ω7.62 x 1.40 0.300 x 0.055
l14 0.058 λ, 50.0 Ω3.81 x 1.40 0.150 x 0.055
1Electrical characteristics are rounded.
a2 4045 1ef_sch
R3
2KV
R4
2KV
C3
0.001µF
C2
0.001µF
R1
1.3KVR2
1.2KV
C1
0.001µF
VDD
QQ1
LM7805
Q1
BCP56
R5
5.1KV
C12
1µF
C4
10 µF
35V
C5
.1µF
R6
10V
R7
5.1KVl4
C7
.01µF
C6
.1µF
R8
10V
C8
4.5pF
C11
4.5pF
C13
.1µF
L1
C14
10µF
50V
VDD
C16
1µF
l12RF_IN
C9
4.5pF
l1l2
C10
1.8pF
l3
DUT
l5l6l7
C15
4.5pF
l9
l8
l10 l11
C17
.1µF
L2
C18
10µF
50V
C20
4.5pF
C19
1.2pF
l13 l14 RF_OUT
PTFA240451E
Data Sheet 8 of 10 Rev. 04, 2008-03-04
Reference Circuit (cont.)
Reference circuit assembly diagram* (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5, C6, C13, C17 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C7 Ceramic capacitor, 0.01 µF ATC 200B 103
C8, C9, C11, C15, Ceramic capacitor, 4.5 pF ATC 100B 4R5
C20
C10 Ceramic capacitor, 1.8 pF ATC 100B 1R8
C12, C16 Capacitor, 1 µF ATC 920C105KW
C14, C18 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C19 Ceramic capacitor, 1.2 pF ATC 100B 1R2
L1, L2 Ferrite Philips BDS46/3.8.8-452
Q1 Transistor Infineon BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND
R2 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND
R3 Chip resistor, 2 k-ohms Digi-Key P2.0KECT-ND
R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R7 Chip resistor, 5.1 k-ohms Digi-Key P5.1KECT-ND
R6, R8 Chip resistor, 10 ohms Digi-Key P10ECT-ND
*Gerber Files for this circuit available on request
a24045 1ef_assy
A240451out_01
A240451in_01
LM
10
35V
+
L2L1
C18
C16
C17
C20
C19
C15
R4 QQ1
C3 C1
C2
R1
R5 R3C5
C4
Q1
R6
R7
C8
C6 C7
R8
C9 C10
R2
C14
C13
C12C11
VDD
VDD
VDD
PTFA240451E
Data Sheet 9 of 10 Rev. 04, 2008-03-04
Package Outline Specifications
Package H-30265-2
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
20.31
[.800]
10.16±0.25
[.400±.010]
2X 2.59±0.38
[.107 ±.015]
FLANGE 9.78
[.385]
2x 7.11
[.280]
7.11
[.280]
15.23
[.600]
4x 1.52
[.060]
C
L
C
L
(45° X 2.03
[.080])
S
D
G
2X R1.60
[.063]
LID 10.16±0.25
[.400±.010]
0.0381 [.0015] -A-
3.48±0.38
[.137±.015]
1.02
[.040]
SPH 1.57
[.062]
15.60±0.51
[.614±.020]
H-30265-2-1-2303
Data Sheet 10 of 10 Rev. 04, 2008-03-04
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-03-04
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2005.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFA240451E
Confidential, Limited Internal Distribution
Revision History: 2008-03-04 Data Sheet
Previous Version: 2006-07-17, Data Sheet
Page Subjects (major changes since last revision)
All Remove references to alternate products.
1 – 2, 9 – 10 Update package numbers, no change to outline.
