1C4D10120E Rev. G, 01-2017
C4D10120E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SolarInverters
• SwitchModePowerSupplies(SMPS)
• BoostdiodesinPFCorDC/DCstages
• FreeWheelingDiodesinInverterstages
• AC/DCconverters
Package
TO-252-2 
Part Number Package Marking
C4D10120E TO-252-2 C4D10120
PIN1
PIN2 CASE
Maximum Ratings (TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 1200 V
VRSM SurgePeakReverseVoltage 1300 V
VDC DCBlockingVoltage 1200 V
IFContinuousForwardCurrent
33
16
10
A
TC=25˚C
TC=135˚C
TC=156˚C
Fig.3
IFRM RepetitivePeakForwardSurgeCurrent 47
31.5 ATC=25˚C,tP=10ms,HalfSinepulse
TC=110˚C,tP=10ms,HalfSinepulse
IFSM Non-RepetitivePeakForwardSurgeCurrent 71
59 ATC=25˚C,tP=10ms,HalfSinepulse
TC=110˚C,tP=10ms,HalfSinepulse Fig.8
IF,Max Non-RepetitivePeakForwardCurrent 750
620 ATC=25˚C,tP=10ms,Pulse
TC=110˚C,tP=10ms,Pulse Fig.8
Ptot PowerDissipation 166.5
72 WTC=25˚C
TC=110˚C Fig.4
dV/dt DiodedV/dtruggedness 200 V/ns VR=0-960V
∫i2dt i2tvalue 25
17.5 A2sTC=25˚C,tP=10ms
TC=110˚C,tP=10ms
T
J
,T
stg
OperatingJunctionandStorageTemperature -55to
+175 ˚C
VRRM  = 1200V
IF (TC=135˚C) =16A
Qc   = 52nC
2C4D10120E Rev. G, 01-2017
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
2.2
1.8
3VIF=10ATJ=25°C
IF=10ATJ=175°C Fig.1
IRReverseCurrent 30
55
250
350 μAVR=1200VTJ=25°C
VR=1200VTJ=175°C Fig.2
QCTotalCapacitiveCharge 52 nC
VR=800V,IF=10A
di/dt=200A/μs
TJ=25°C
Fig.5
C TotalCapacitance
754
45
38
pF
VR=0V,TJ=25°C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
VR=800V,TJ=25˚C,f=1MHz
Fig.6
ECCapacitanceStoredEnergy 14.5 μJ VR=800V Fig.7
Note:Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC ThermalResistancefromJunctiontoCase 0.9 °C/W Fig.9
Typical Performance
Figure1.ForwardCharacteristics
0
2
4
6
8
10
12
14
16
18
20
00.5 11.5 22.5 33.5 4
Figure2.ReverseCharacteristics
0
1
2
3
4
5
0500 1000 1500 2000
IF (A)
VF (V)
IR (mA)
VR (V)
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
3C4D10120E Rev. G, 01-2017
Figure3.CurrentDerating
Typical Performance
0
100
200
300
400
500
600
700
800
0.1 110 100 1000
Figure4.PowerDerating
Figure5.RecoveryChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
C (pF)
VR (V)
0
10
20
30
40
50
60
70
0200 400 600 800 1000
VR (V)
Qc (nC)
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
60
80
100
120
0
20
40
25
50
75
150
175
60.0
80.0
100.0
120.0
140.0
160.0
180.0
0.0
20.0
40.0
60.0
25 50 75 100 125 150 175
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
10%Duty
20%Duty
30%Duty
50%Duty
70%Duty
DC
4C4D10120E Rev. G, 01-2017
10.0
15.0
20.0
25.0
Capacitive Energy (uJ)
0.0
5.0
0 200 400 600 800 1000
E
C
Capacitive Energy (uJ)
VRReverse Voltage (V)
Typical Performance
100
1000
IFSM(A)
10
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
1000
100
10
Figure7.TypicalCapacitanceStoredEnergy Figure8.Non-repetitivepeakforwardsurgecurrent
versuspulseduration(sinusoidalwaveform)
tp (s)
IFSM (A)
TJ_initial=25°C
TJ_initial=110°C
VR (V)
25
20
15
10
5
0
02004006008001000
EC(mJ)
1E-051E-041E-031E-02
Figure9.TransientThermalImpedance
10E
-
3
100E-3
1
0.5
0.3
0.1
0.05
0.02
0.01 SinglePulse
1E-3
10E
-
3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Thermal Resistance (˚C/W)
T (Sec)
5C4D10120E Rev. G, 01-2017
Recommended Solder Pad Layout
Part Number Package Marking
C4D10120E TO-252-2 C4D10120
TO-252-2
Package Dimensions
PackageTO-252-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
θ
Tjb June 2015
MX+DI+PSI
SYMBOL MILLIMETERS
MIN
MAX
A
2.159
2.413
A1
0
0.13
b
0.64
0.89
b2 0.653 1.143
b3
5.004
5.6
c
0.457
0.61
c2
0.457
0.864
D
5.867
6.248
D1
5.21
-
E
6.35
7.341
E1
4.32
-
e 4.58 BSC
H
9.65
10.414
L
1.106
1.78
L2
0.51 BSC
L3
0.889
1.27
L4
0.64
1.01
θ
0°
8°
Tjb June 2015
MX+DI+PSI
66 C4D10120E Rev. G, 01-2017
Copyright © 2017 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RRoHS Declarations for this product
can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
RelatedLinks
Diode Model
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT=VT+If*RT
VT=0.98+(TJ*-1.71*10-3)
RT=0.040+(TJ*5.32*10-4)