C4D10120E VRRM = 1200 V Silicon Carbide Schottky Diode IF (TC=135C) = 16 A Z-Rec Rectifier (R) Qc Features * * * * * * 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications * * * * * 52 nC Package Benefits * * * * * = Part Number Package Marking C4D10120E TO-252-2 C4D10120 Solar Inverters Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (TC=25C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VDC DC Blocking Voltage 1200 V 33 16 10 A TC=25C TC=135C TC=156C 47 31.5 A TC=25C, tP=10 ms, Half Sine pulse TC=110C, tP=10 ms, Half Sine pulse 71 59 A TC=25C, tP=10 ms, Half Sine pulse TC=110C, tP=10 ms, Half Sine pulse Fig. 8 750 620 A TC=25C, tP=10 ms, Pulse TC=110C, tP=10 ms, Pulse Fig. 8 166.5 72 W TC=25C TC=110C Fig. 4 VR=0-960V IF Continuous Forward Current IFRM Repetitive Peak Forward Surge Current IFSM Non-Repetitive Peak Forward Surge Current IF,Max Non-Repetitive Peak Forward Current Ptot Power Dissipation dV/dt Diode dV/dt ruggedness 200 V/ns i2dt i2t value 25 17.5 A2s -55 to +175 C TJ , Tstg 1 Value Operating Junction and Storage Temperature C4D10120E Rev. G, 01-2017 TC=25C, tP=10 ms TC=110C, tP=10 ms Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8 3 V IF = 10 A TJ=25C IF = 10 A TJ=175C Fig. 1 IR Reverse Current 30 55 250 350 A VR = 1200 V TJ=25C VR = 1200 V TJ=175C Fig. 2 QC Total Capacitive Charge 52 nC VR = 800 V, IF = 10A di/dt = 200 A/s TJ = 25C Fig. 5 C Total Capacitance 754 45 38 pF VR = 0 V, TJ = 25C, f = 1 MHz VR = 400 V, TJ = 25C, f = 1 MHz VR = 800 V, TJ = 25C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 14.5 J VR = 800 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 0.9 C/W Fig.9 Typical Performance 20 5 TJ=-55C T = 25C TJ= 75C J T =125C TJ =175C J 18 16 4 14 12 IF (A) IR (mA) 3 10 8 TJ=-55C T = 25C TJ= 75C J T =125C TJ =175C J 2 6 4 1 2 0 0 0.5 1 1.5 2 2.5 3 VF (V) Figure 1. Forward Characteristics 2 C4D10120E Rev. G, 01-2017 3.5 4 0 0 500 1000 VR (V) 1500 Figure 2. Reverse Characteristics 2000 Typical Performance 180.0 120 70 160.0 10% 20% 30% 50% 70% DC 100 60 140.0 120.0 PTot (W) IF(peak) (A) 50 80 Duty Duty Duty Duty Duty 100.0 40 60 30 80.0 60.0 40 20 40.0 20 10 20.0 0 25 25 50 50 75 75 100 100 125 125 150 150 0.0 175 175 25 50 75 TC C 100 125 150 175 TC C Figure 3. Current Derating Figure 4. Power Derating 70 800 60 700 600 50 C (pF) Qc (nC) 500 40 30 400 300 20 200 10 100 0 0 200 400 600 800 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D10120E Rev. G, 01-2017 1000 0 0.1 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 25 25.0 1000 1000 EC Capacitive Energy (uJ) C 20 20.0 (A) IFSMIFSM (A) E (mJ) 15 15.0 10 10.0 100 100 TJ_initial = 25C T = 110C J_initial 5.05 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 1 Thermal Resistance (C/W) 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 0.01 10E-3 1E-3 1E-6 10E-6 100E-6 1E-3 10E-3 T (Sec) Figure 9. Transient Thermal Impedance 4 C4D10120E Rev. G, 01-2017 100E-3 1 Package Dimensions SYMBOL Package TO-252-2 A A1 b b2 b3 c c2 D D1 E E1 e H L L2 L3 L4 q MILLIMETERS MIN MAX 2.159 2.413 0 0.13 0.64 0.89 0.653 1.143 5.004 5.6 0.457 0.61 0.457 0.864 5.867 6.248 5.21 6.35 7.341 4.32 4.58 BSC 9.65 10.414 1.106 1.78 0.51 BSC 0.889 1.27 0.64 1.01 0 8 Tjb June 2015 MX+DI+PSI Recommended Solder Pad Layout Part Number Package Marking C4D10120E TO-252-2 C4D10120 TO-252-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C4D10120E Rev. G, 01-2017 Diode Model Diode Model CSD04060 Vf TfT== VTV+T+If*R If*RT T V -3 V VTT==0.965 + (Tj *J*-1.3*10 ) -3) 0.98+(T -1.71*10 -3 RTT==0.096 + (Tj * 1.06*10 ) -4 0.040+(T J* 5.32*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25C to 175C VT RT Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RRoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links * * * Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright (c) 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D10120E Rev. G, 01-2017 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power