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Data Sheet
Revision 1.1, 2012-07-03
Final
ESD5V3U4U-HDMI
Uni-directional Ultra-low Capacitance ESD / Transient Protection Array
ESD5V3U4U-HDMI
TVS Diode
Transient Voltage Suppressor Diode
Edition 2012-07-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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ESD5V3U4U-HDMI
FinalData Sheet 3 Revision 1.1, 2012-07-03
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
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MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
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FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Revision History Revision 1.0, 2012-06-30
Page or Item Subjects (major cha nges since previous revision)
Revision 1.1, 2012-07-03
7Figure 2-1
ESD5V3U4U-HDMI
Uni-directional Ultra-low Capacitance ESD / Transient Protection Array
FinalData Sheet 4 Revision 1.1, 2012-07-03
1 Uni-directional Ultra-low Capacitance ESD / Transient Protection
Array
1.1 Features
ESD / Transient protection of high speed data lines exceeding:
IEC61000-4-2 (ESD): ±20 kV (air / contact)
IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns)
IEC61000-4-5 (surge): 3 A (8/20 μs)
Maximum working voltage: VR = 5.3 V
Very low reverse current: IR < 1 nA typ.
Extremely low capacitance: 0.4 pF typ. (I/O to GND)
Four-lines protection array with pad pitch = 0.5 mm
Flow-through design for optimal PCB layout of differential lines
Pb-free package (RoHS compliant) and halogen free package
1.2 Application Examples
Protection of high speed digital interfaces like:
HDMI 1.3, HDMI 1.4a, MHL, DisplayPort, S-ATA, DVI, MIPI, MDDI
USB2.0, 10/100/1000 Ethernet, FireWire
2 Product Description
Figure 2-1 Pin Configuration and Schematic Diagram
Table 2-1 Ordering information
Type Package Configuration Marking code
ESD5V3U4U-HDMI PG-TSLP-9-1 4 lines, uni-directional Z1
b) Schematic diagrama) Pin configuration
Pin 1 Pin 2 Pin 4 Pin 5
Pin 3
I/O I/O I/O I/O
GND
Pin 9 Pin 8 Pin 7 Pin 6
Pin 3Pin 1 Pin 2 Pin 4 Pin 5
ESD5V3U4U-HDMI
Characteristics
FinalData Sheet 5 Revision 1.1, 2012-07-03
3 Characteristics
3.1 Electrical Characteristics at TA = 25 °C, unless otherwise specified
Figure 3-1 Definitions of Electrical Characteristics
Table 3-1 Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
Min. Typ. Max.
ESD (air / contact) discharge1)
1) VESD according to IEC61000-4-2
VESD ––20kV
Peak pulse current (tp = 8/20 μs)2)
2) IPP according to IEC61000-4-5
IPP ––3A
Operating temperature range TOP -40 125 °C
Storage temperature Tstg -65 150 °C
Table 3-2 DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Reverse working voltage VRWM ––5.3V
Breakdown voltage VBR 6––VIBR = 1 mA
(I/O to GND)
Reverse current IR–<150nAVR = 5.3 V
(I/O to GND)
Diode_Characteristic_Curve_Uni-directional.vsd
VF
RDYN: Dynamic resistance
VBR: Breakdown voltage
VRWM
: Ma xi mum w orking vol t age
VCL
: C lamping volt age
VFC: F orw ard clamping volt age
IPP: Peak pulse cur r ent
VFC
IF
VRWM
VF
VR
VBR
VCL
I
R
IF
IPP
IPP
IR
IRWM
RDYN
RDYN
VF: F orw ard vol tage
IF: Forward current
VR: R evers e voltage
IR: Reverse current
ESD5V3U4U-HDMI
Characteristics
FinalData Sheet 6 Revision 1.1, 2012-07-03
Table 3-3 RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Line capacitance1)
1) Total capacitance line to ground
CL–0.40.6pFVR = 0 V, f = 1 MHz
(I/O to GND)
Line capacitance1) CL–0.20.3pFVR = 0 V, f = 1 MHz
(I/O to I/O)
Table 3-4 ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Clamping voltage1)
1) Please refer to Application Note AN210 [1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns
to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristic between IPP1 = 10 A and
IPP2 = 40 A.
VCL –19–VIPP = 16 A
(I/O to GND)
–28–V
IPP = 30 A
(I/O to GND)
Forward clamping
voltage1)
VFC –10–VIPP = 16 A
(GND to I/O)
–17–V
IPP = 30 A
(GND to I/O)
Dynamic resistance1) RDYN –0.6I/O to GND
0.5 GND to I/O
ESD5V3U4U-HDMI
Characteristics
FinalData Sheet 7 Revision 1.1, 2012-07-03
3.2 Typical Characteristics at TA = 25°C, unless otherwise specified
Figure 3-2 Reverse current: IR = f(TA) , VR = 5.3 V, (I/O to GND)
Figure 3-3 Diode capacitance: CL = f(VR), (I/O to GND)
10-11
10-10
10-9
10-8
10-7
10-6
25 50 75 100 125 150
IR [A]
TA [°C]
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
CL [pF]
VR [V]
ESD5V3U4U-HDMI
Characteristics
FinalData Sheet 8 Revision 1.1, 2012-07-03
Figure 3-4 Line capacitance: CL = f(TA)
Figure 3-5 Line capacitance: CL = f(f), (I/O to GND)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-50 -25 0 25 50 75 100
CL [pF]
TA [°C]
0V
5.3V
0
0.1
0.2
0.3
0.4
0.5
0.6
0 500 1000 1500 2000 2500 3000
CL [pF]
f [MHz]
0V
5.3V
ESD5V3U4U-HDMI
Characteristics
FinalData Sheet 9 Revision 1.1, 2012-07-03
Figure 3-6 Forward clamping voltage: ITLP = f(VTLP), (GND to I/O) [1]
Figure 3-7 Reverse clamping voltage: ITLP = f(VTLP), (I/O to GND) [1]
0
10
20
30
40
0 5 10 15 20 25 30 35 40
0
5
10
15
20
ITLP [A]
Equivalent VIEC [kV]
VTLP [V]
ESD5V3U4U-HDMI
RDYN
RDYN=0.6Ω
0
10
20
30
40
0 5 10 15 20 25 30
0
5
10
15
20
ITLP [A]
Equivalent VIEC [kV]
VTLP [V]
ESD5V3U4U-HDMI
RDYN
RDYN=0.5Ω
ESD5V3U4U-HDMI
Characteristics
FinalData Sheet 10 Revision 1.1, 2012-07-03
Figure 3-8 IEC61000-4-2 VCL = f(t), 8 kV positive pulse, (I/O to GND)
Figure 3-9 IEC61000-4-2 VCL = f(t), 8 kV negative pulse, (I/O to GND)
-10
0
10
20
30
40
50
60
70
80
90
-100 0 100 200 300 400 500 600 700 800 900
VCL [V]
tp [ns]
VCL-max-peak = 82.2 [V]
VCL-30ns-peak = 17.3 [V]
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-100 0 100 200 300 400 500 600 700 800 900
VCL [V]
tp [ns]
VCL-max-peak = -76.1 [V]
VCL-30ns-peak = -8.9 [V]
ESD5V3U4U-HDMI
Characteristics
FinalData Sheet 11 Revision 1.1, 2012-07-03
Figure 3-10 IEC61000-4-2 VCL = f(t), 15 kV positive pulse, (I/O to GND)
Figure 3-11 IEC61000-4-2 VCL = f(t), 15 kV negative pulse, (I/O to GND)
-10
0
10
20
30
40
50
60
70
80
90
100
110
-100 0 100 200 300 400 500 600 700 800 900
VCL [V]
tp [ns]
VCL-max-peak = 104.8 [V]
VCL-30ns-peak = 24.1 [V]
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-100 0 100 200 300 400 500 600 700 800 900
VCL [V]
tp [ns]
VCL-max-peak = -105.1 [V]
VCL-30ns-peak = -13.7 [V]
ESD5V3U4U-HDMI
Application Information
FinalData Sheet 12 Revision 1.1, 2012-07-03
4 Application Information
Figure 4-1 4 lines, uni-directional ESD5V3U4U-HDMI
For protection on the 5 V supply rail please refer to ESD5V3U1U- TVS diode data sheet.
ESD5V3U4U
ESD5V3U4U
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
ESD5V3U4U
ESD5V3U1U
+5V
HDMI Source/Sink
CEC
SCL
SDA
Hot Plug Detect
TMDS Data2
TMDS Data1
TMDS Data0
TMDS Clock
HDMI Type A
Connector
TMDS Channels
CEC Line
DDC (I²C Bus)
DDC/CEC GND
+5V
Hot Plug Detect
N.C.
ESD5V3U4U-HDMI
Ordering Information Scheme (Examples)
FinalData Sheet 13 Revision 1.1, 2012-07-03
5 Ordering Information Scheme (Examples)
Figure 5-1 Ordering information scheme
ESD 5V3 U- XX YY
P ackage or Applicat io n
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
M aximum workin g vol t age VRWM in V: (i.e.: 5V3 = 5.3V)
ESD 0P1 RF - XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance CLin pF: (i.e.: 0P1 = 0.1pF)
n U
Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
ESD5V3U4U-HDMI
Package Information
FinalData Sheet 14 Revision 1.1, 2012-07-03
6 Package Information
6.1 PG-TSLP-9-1
Figure 6-1 PG-TSLP-9-1: Package overview
Figure 6-2 PG-TSLP-9-1: Foo tprint
TSLP-9-1-PO V02
Top view
91
56
Pin 1 marking
0.59
±0.035
1
0.94±0.0251)
2.3
±0.035
0.31
0.05 MAX.
+0.01
-0.02
1) Dimension applies to plated terminals
4
8 x 0.2
±0.0251)
(0.03)
(0.05)
0.4
±0.0251)
±0.025
8 x 0.35 1)
2
3
7
8
0.5
4 x 0.5 = 2
0.05 BA
0.05 BA
0.05 BA
0.05 BA
A
B
Bottom view
Stencil apertures
Copper Solder mask
TSLP-9-1-FP V01
0.38
0.38
0.24
1
2.3
0.2
0.2
0.3
0.3
0.2
0.3
0.3
0.2
0.3
0.2
0.38
0.38
0.24
1
2.3
0.2
0.2
0.3
0.3
0.2
0.3
0.3
0.3
ESD5V3U4U-HDMI
Package Information
FinalData Sheet 15 Revision 1.1, 2012-07-03
Figure 6-3 PG-TSLP-9-1: Packing
Figure 6-4 PG-TSLP-9-1: Ma rking (example)
TSLP-9-1-MK V02
Pin 1 marking
1234567
Type code
Data code (YYWW)
ESD5V3U4U-HDMI
References
FinalData Sheet 16 Revision 1.1, 2012-07-03
References
[1] Infineon AG - Application Note AN210 : Effective ESD Protection Design at System Level Using VF-TLP
Characterization Methodology
Published by Infineon Technologies AG
www.infineon.com