© 2008 IXYS All rights reserved 1 - 6
20081126f
GWM 120-0075P3
IXYS reserves the right to change limits, test conditions and dimensions.
VDSS = 75 V
ID25 = 118 A
RDSon typ. = 3.7 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
S2
L-
L1
L2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L+
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon on chip level at TVJ = 25°C
VGS = 10 V ; ID = 60 A TVJ = 125°C
3.7
8.4
5.5 mW
mW
VGS(th) VDS = 20 V; ID = 1 mA 2 4 V
IDSS VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 125°C 0.1
1 µA
mA
IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA
Qg
Qgs
Qgd
VGS = 10 V; VDS = 55 V; ID = 125 A
100
19
28
nC
nC
nC
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 30 V
ID = 80 A; RG = 39 Ω
inductive load
80
80
510
100
ns
ns
ns
ns
Eon
Eoff
Erecoff
0.12
0.40
0.02
mJ
mJ
mJ
RthJC
RthJH with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 75 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
118
85
A
A
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
120
78
A
A
Surface Mount
Device
Straight leads
Bent leads
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 3 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
© 2008 IXYS All rights reserved 2 - 6
20081126f
GWM 120-0075P3
IXYS reserves the right to change limits, test conditions and dimensions.
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
300 A
TVJ
Tstg
-55...+175
-55...+125
°C
°C
VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~
FCmounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
min. typ. max.
Rpin to chip with heatsink compound 0.6 mW
CPcoupling capacity between shorted
pins and mounting tab in the case
160 pF
Weight typ. 25 g
Equivalent Circuits for Simulation
Thermal Response
junction - case (typ.)
Cth1 = 0.039 J/K; Rth1 = 0.28 K/W
Cth2 = 0.069 J/K; Rth2 = 0.57 K/W
P
V
T
J
R
t h1
R
t h2
C
t h2
C
t h1
T
C
Source-Drain Diode
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 60 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 80 A; -diF/dt = 800 A/µs; VR = 30 V
70
1.1
30
ns
µC
A
© 2008 IXYS All rights reserved 3 - 6
20081126f
GWM 120-0075P3
IXYS reserves the right to change limits, test conditions and dimensions.
Straight Leads GWM 120-0075P3-SL
G1
S1
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
L+
L-
L1
L2
L3
Bent Leads GWM 120-0075P3-BL
G1
S1
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
L+
L-
L1
L2
L3
Surface Mount Device GWM 120-0075P3-SMD
G1
S1
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
L+
L-
L1
L2
L3
Leads Ordering Part Name &
Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering
Code
Straight Standard GWM 120-0075P3 - SL GWM 120-0075P3 Blister 36 502 843
SMD Standard GWM 120-0075P3 - SMD GWM 120-0075P3 Blister 36 502 850
Bent Standard GWM 120-0075P3 - BL GWM 120-0075P3 Blister 36 contact factory
© 2008 IXYS All rights reserved 4 - 6
20081126f
GWM 120-0075P3
IXYS reserves the right to change limits, test conditions and dimensions.
-25 0 25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
0.0
1.5
3.0
4.5
6.0
7.5
9.0
10.5
12.0
VDS [V]
0123456
ID [A]
0
50
100
150
200
250
300
VDS [V]
0123456
ID [A]
0
50
100
150
200
250
300
VGS [V]
01234567
ID - [A]
0
50
100
150
200
250
6 V
5.5 V
7 V
-25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
TJ [°C]
TJ = 25°C
TJ = 125°C
4.5 V
4 V
TJ = 25°C 7 V 6.5 V
6 V
4 V
ID [A]
0 50 100 150 200 250 300
RDS(ON) - Normalized
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10 V
15 V
TJ = 125°C
IDSS = 0.25 mA
TJ = 125°C
VDS = 30 V
5 V
5.5 V
5 V
6.5 V
RDS(on) normalized
RDS(on)
RDS(on) [mΩ]
VGE = 10 V
ID = 125 A
TJ [°C]
4 V 4.5 V 5.5 V
5 V 6 V
6.5 V
7 V
VGS = 10 V
ID = 125 A
20 V
4.5 V
10 V
VGS =
20 V
15 V
VGS=
20 V
15 V
10 V
VDSS [V] Normalized
RDS(on) normalized
Fig. 1 Drain source breakdown voltage VDSS
vs. junction temperature TVJ
Fig. 2 Typical transfer characteristic
Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic
Fig. 5 Drain source on-state resistance RDS(on)
versus junction temperature TJ
Fig. 6 Drain source on-state
resistance RDS(on) versus ID
© 2008 IXYS All rights reserved 5 - 6
20081126f
GWM 120-0075P3
IXYS reserves the right to change limits, test conditions and dimensions.
Eon
QG [nC]
0 20 40 60 80 100 120
ID - [A]
0
2
4
6
8
10
12
14
td(on)
tr
VGS [V]
Erec(off)
0 20 40 60 80 100 120 140
0.00
0.04
0.08
0.12
0.16
0.20
0
25
50
75
100
125
0 20 40 60 80 100 120 140
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
100
200
300
400
500
600
700
800
0 20 40 60 80 100 120
0.00
0.15
0.30
0.45
0.60
0.75
0
50
100
150
200
250
0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
200
400
600
800
1000
1200
1400
1600
TJ [°C]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
Eon
Eon, Erec(off) [mJ]
ID [A] ID [A]
t [ns]
Eoff tf
td(off)
t [ns]
Erec(off)
td(on)
tr
RG [Ω]
Eoff [mJ]
t [ns]
RG [Ω]
Eoff
td(off)
tf
Eoff [mJ]
ID = 125 A
TJ = 25°C
VDS = 15 V
VDS = 55 V
VDS = 30 V
VGS = +10/0 V
RG = 39 Ω
TJ = 125°C VDS = 30 V
VGS = +10/0 V
RG = 39 Ω
TJ = 125°C
Eon, Erec(off) [mJ]
t [ns]
VDS = 30 V
VGS = +10/0 V
ID = 125 A
TJ = 125°C
VDS = 30 V
VGS = +10/0 V
ID = 125 A
TJ = 125°C
Fig.7 Gate charge characteristic Fig. 8 Drain current ID vs. case temperature TC
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
© 2008 IXYS All rights reserved 6 - 6
20081126f
GWM 120-0075P3
IXYS reserves the right to change limits, test conditions and dimensions.
-diF/dt [A/µs]
400 800 1200 1600
IRM [A]
15
20
25
30
35
40
45
50
-diF/dt [A/µs]
400 600 800 1000 1200 1400 1600
trr [ns]
50
55
60
65
70
75
80
VSD [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IS [A]
0
50
100
150
200
250
300
-diF/dt [A/µs]
400 800 1200 1600
Qrr [µC]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
TJ = -25°C
25°C
125°C
150°C
Time [ms]
1 10 100 1000 10000
Thermal Response [K/W]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VR = 30 V
TVJ = 125°C
40 A 80A
125 A
40 A
80 A
125 A
VR = 30 V
TVJ = 125°C
VR = 30 V
TVJ = 125°C
40 A
80A
125 A
GWM 120-0075P3
Fig. 13 Reverse recovery time trr
of the body diode vs. di/dt
Fig. 14 Reverse recovery current IRM
of the body diode vs. di/dt
Fig. 15 Reverse recovery charge Qrr
of the body diode vs. di/dt
Fig. 16 Source current IS vs.
source drain voltage VSD (body diode)
Fig. 17 Definition of switching times Fig. 18 Typ. therm. impedance junction
to heatsink ZthJC
V
GS
0,1 VGS
0,9 VGS
t
t
VDS
ID
0,1 ID
0,9 ID
0,1 ID
td(on)trtf
td(off)
0,9 ID
