mw RF Products a 140 COMMERCE DRIVE MONTGOMERYVILLE, PA Microsemi =: PHONE: (215) 631-9840 FAX: (215) 631-2885 MS2211 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE Pour = 6.0 W MIN. WITH 9.3 dB Gain DESCRIPTDN: The MS2211 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats 910 x .310 2LFL hermetically sealed PIN CONNECTION 1 utilizing short pulse widths and high burst or overall duty cycles. oLJO 4 Fs 2 1. Collector 3. Emitter 2. Base 4. Base ABSOIUTEM AXM UM RATINGS (Tcase = 25C) Symbol Parameter Value Unit Poss Power Dissipation * (Tc < 75C) 25 Ww Ic Device Current * 0.9 A Vec Collector - Supply Voltage * 32 Vv Ty Junction Temperature (Pulsed RF Operation) 250 C Tste Storage Temperature - 65 to + 200 C Them alData | Rruac) | Junction-Case Thermal Resistance * | 7.0 | C/W * Applies only to rated RF amplifier operation MSC0919.PDF 9-23-98Microsemi MS2211 FIFCTRICALSPECIFCATIONS (case = 25C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BV cgo Ic = 1mA le =OmA 48 V BVeEso le = 1mA Ic =OmA 3.5 V BVcer Ic = 5mA Ree =1002 48 V Ices Vae= OV Vee = 28 V 0.5 mA Nee Vor = 5V le = 250 mA 30 300 _ DYNAM TC Symbol Test Conditions Value Min. Typ. Max. Unit Pout f = 960 - 1215 MHz Pw = 0.7 W Voce = 28 V 6.0 === --- W he f = 960 - 1215 MHz Pw = 0.7 W Voce = 28 V 45 === === % Gp f = 960 - 1215 MHz Pin = 0.7 W Voc = 28 V 9.3 === === dB Note: Pulse format: 6.4 us on 6.6 us off, repeat for 3.3 ms, then off for 4.5125 ms. Duty Cycle: Burst 49.2%, Overall 20.8% MSC0919.PDF 9-23-98M @ RF Products a ed by Technology bee)? ht ade MS2211 PACKAGE MECHANICAL DATA MSC0919.PDF 9-23-98