Three Phase Rectifier Bridges PSD 55 IdAVM = 58 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 55/08 PSD 55/12 PSD 55/14 PSD 55/16 PSD 55/18 Symbol Test Conditions IdAVM IFSM T C = 85C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 58 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 750 820 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2820 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2300 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 5 3 260 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM Characteristic Value VF VTO rT RthJC IF = 150 A T VJ = 25C 0.3 10.0 mA mA 1.6 V For power-loss calculations only T VJ = T VJM 0.85 8 V m per Diode; DC current per module 2.7 0.45 K/W K/W RthJK per Diode; DC current per module 3.06 0.51 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 7.8 7.8 50 mm mm m/s2 POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSD 55 I F(OV) -----I FSM 60 IFSM (A) TVJ=45C TVJ=150C A T=150C 50 1.6 40 1.4 30 1.2 20 1 4 10 2 As 750 670 TVJ=45C 10 3 TVJ=150C 0 V RRM 10 0.8 T=25C 1/2 V RRM IF 0.6 0 VF V 1 1.5 1 V RRM 10 0.4 0 1 10 Fig. 1 Forward current versus voltage drop per diode 10 2 3 t[ms] 10 2 1 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 200 [W] PSD 55 175 2 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 60 0.17 0.05 = RTHCA [K/W] TC 65 70 70 0.3 75 DC sin.180 rec.120 rec.60 rec.30 [A] 80 150 85 125 90 0.55 50 95 100 100 105 DC sin.180 rec.120 rec.60 rec.30 50 25 PVTOT 0 110 1.05 75 120 125 130 2.55 135 140 145 C 150 10 IFAVM 30 0 50 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 4 K/W Z thJK Z thJC 3 2 1 Zth 0.01 0.1 t[s] 30 115 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated 10 IdAV 0 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature