Agilent ATF-511P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s
ATF-511P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC[3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
Features
•Single voltage operation
•High linearity and P1dB
•Low noise figure
•Excellent uniformity in product
specifications
•Small package size:
2.0 x 2.0 x 0.75 mm
•Point MTTF > 300 years[2]
•MSL-1 and lead-free
•Tape-and-reel packaging option
available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
•41.7 dBm output IP3
•30 dBm output power at 1 dB gain
compression
•1.4 dB noise figure
•14.8 dB gain
•12.1 dB LFOM[4]
•69% PAE
Applications
•Front-end LNA Q2 and Q3 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
•Driver amplifier for WLAN,
WLL/RLL and MMDS applications
•General purpose discrete E-pHEMT
for other high linearity applications
Pin Connections and
Package Marking
Note:
Package marking provides orientation and
identification:
“1P” = Device Code
“x” = Date code indicates the month of
manufacture.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
1Px
Top View
Pin 8
Source
(Thermal/RF Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
2
ATF-511P8 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VDS Drain–Source Voltage[2] V7
VGS Gate–Source Voltage[2] V -5 to 1
VGD Gate Drain Voltage[2] V -5 to 1
IDS Drain Current[2] A1
IGS Gate Current mA 46
Pdiss Total Power Dissipation[3] W3
Pin max. RF Input Power[4] dBm +30
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
θch_b Thermal Resistance[5] °C/W 33
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 30 mW/°C for TB > 50°C.
4. With 10 Ohm series resistor in gate supply
and 3:1 VSWR.
5. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
6. Device can safely handle +30dBm RF Input
Power provided IGS limited to 46mA. IGS at
P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA[6,7]
OIP3 (dBm)
Figure 2. OIP3
LSL = 38.5, Nominal = 41.7.
35 41
38 44 47
240
200
160
120
80
40
0
Cpk = 1.66
Stdev = 0.6
-3 Std +3 Std
P1dB (dBm)
Figure 3. P1dB
LSL = 28.5, Nominal = 30.
28 30
29 31
200
160
120
80
40
0
Cpk = 3.24
Stdev = 0.15
-3 Std +3 Std
GAIN (dB)
Figure 4. Gain
LSL = 13.5, Nominal = 14.8, USL = 16.5.
13 15
14 16 17
150
120
90
60
30
0
Cpk = 1.4
Stdev = 0.31
-3 Std +3 Std
Notes:
6. Distribution data sample size is 400 samples taken from 4 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
7. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
Figure 1. Typical I-V Curves
(Vgs = 0.1 per step).
V
DS
(V)
1000
900
800
700
600
500
400
300
200
100
0
02 468
I
DS
(mA)
0.8 V
0.7 V
0.5 V
0.6 V
PAE (%)
Figure 5. PAE
LSL = 52, Nominal = 68.9.
52 62
57 67 72 77 82
160
120
80
40
0
Cpk = 3.03
Stdev = 1.85
-3 Std +3 Std
3
ATF-511P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Vgs Operational Gate Voltage Vds = 4.5V, Ids = 200 mA V 0.25 0.51 0.8
Vth Threshold Voltage Vds = 4.5V, Ids = 32 mA V —0.28 —
Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V µA—16.4 —
Gm Transconductance Vds = 4.5V, Gm = ∆Idss/∆Vgs; mmho —2178 —
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V µA -27 -2 —
NF Noise Figure[1] f = 2 GHz dB —1.4 —
f = 900 MHz dB —1.2 —
G Gain[1] f = 2 GHz dB 13.5 14.8 16.5
f = 900 MHz dB —17.8 —
OIP3 Output 3rd Order Intercept Point[1,2] f = 2 GHz dBm 38.5 41.7 —
f = 900 MHz dBm —43 —
P1dB Output 1dB Compressed[1] f = 2 GHz dBm 28.5 30 —
f = 900 MHz dBm —29.6 —
PAE Power Added Efficiency f = 2 GHz % 52 68.9 —
f = 900 MHz % —68.6 —
ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc —-58.9 —
Power Ratio[1,3] Offset BW = 10 MHz dBc —-62.7 —
Notes:
1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition.
2. I ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
II ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
4. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note for more details.
Input 50 Ohm
Transmission
Line and
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.69
Γ_ang = -164°
(1.1 dB loss)
Output
Matching Circuit
Γ_mag = 0.65
Γ_ang = -163°
(0.9 dB loss)
DUT
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
200 mA quiesent bias:
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
RF Input
1.2 pF
1.2 pF
2.7 nH1.8 nH
RF Output
50 Ohm
.02 λ
110 Ohm
.03 λ
110 Ohm
.03 λ
50 Ohm
.02 λ
DUT
15 nH
15 Ohm
2.2 µF
Gate
DC Supply
47 nH
2.2 µF
Drain
DC Supply
Optimum OIP3
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang Mag Ang (dBm) (dB) (dBm) (%)
0.9 0.776 152 0.549 -178 43.3 17.94 29.63 63.8
2.0 0.872 -171 0.683 -179 43.1 15.06 30.12 66.8
2.4 0.893 -162 0.715 -174 42.8 14.03 29.90 64.5
3.9 0.765 -132 0.574 -144 41.7 9.47 29.02 52
Optimum P1dB
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang Mag Ang (dBm) (dB) (dBm) (%)
0.9 0.773 153 0.784 -173 38.0 19.28 31.9 54.23
2.0 0.691 147 0.841 -166 36.4 10.34 31.4 38.15
2.4 0.797 164 0.827 -166 36.2 8.43 31.2 37.38
3.9 0.602 -163 0.794 -155 35.4 7.03 31 32.72
5
ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 200 mA
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
IDS (mA)
Figure 8. OIP3 vs. IDS and VDS at 2 GHz.
OIP3 (dBm)
50
50
45
40
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
IDS (mA)
Figure 9. OIP3 vs. IDS and VDS at 900 MHz.
OIP3 (dBm)
50
50
45
40
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
Idq (mA)
Figure 10. P1dB vs. Idq and VDS at 2 GHz.
P1dB (dBm)
50
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
Idq (mA)
Figure 11. P1dB vs. Idq and VDS at 900 MHz.
P1dB (dBm)
50
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
IDS (mA)
Figure 12. Gain vs. IDS and VDS at 2 GHz.
GAIN (dB)
50
17
16
15
14
13
12
11
10
550150 350 450250
4.5 V
4 V
3 V
IDS (mA)
Figure 13. Gain vs. IDS and VDS at 900 MHz.
GAIN (dB)
50
20
19
18
17
16
15
14
13
550150 350 450250
4.5 V
4 V
3 V
Idq (mA)
Figure 14. PAE vs. Idq and VDS at 2 GHz.
PAE (%)
50
80
70
60
50
40
30
20
10
0
550150 350 450250
4.5 V
4 V
3 V
Idq (mA)
Figure 15. PAE vs. Idq and VDS at 900 MHz.
PAE (%)
50
80
70
60
50
40
30
20
10
0
550150 350 450250
4.5 V
4 V
3 V
FREQUENCY (GHz)
Figure 16. OIP3 vs. Temp and Freq.
OIP3 (dBm)
0.5
50
45
40
35
30
25
20
41 2 2.51.5 3 3.5
-40 °C
25 °C
85 °C
6
ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V, 200 mA
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
FREQUENCY (GHz)
Figure 17. P1dB vs. Temp and Freq.
P1dB (dBm)
0.5
35
30
25
20
15
10
41 2 2.51.5 3 3.5
FREQUENCY (GHz)
Figure 18. Gain vs. Temp and Freq.
GAIN (dB)
0.5
20
15
10
5
0
41 2 2.51.5 3 3.5
FREQUENCY (GHz)
Figure 19. PAE vs. Temp and Freq.
PAE (%)
0.5
80
70
60
50
40
30
20
10
0
41 2 2.51.5 3 3.5
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C-40 °C
25 °C
85 °C
IDS (mA)
Figure 20. OIP3 vs. IDS and VDS at 2 GHz.
OIP3 (dBm)
50
50
45
40
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
IDS (mA)
Figure 21. OIP3 vs. IDS and VDS at 900 MHz.
OIP3 (dBm)
50
50
45
40
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
Idq(mA)
Figure 22. P1dB vs. Idq and VDS at 2 GHz.
P1dB (dBm)
50
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
Idq (mA)
Figure 23. P1dB vs. Idq and VDS at 900 MHz.
P1dB (dBm)
50
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
IDS (mA)
Figure 24. Gain vs. IDS and VDS at 2 GHz.
GAIN (dB)
50
12
10
8
6
4
2
0
550150 350 450250
4.5 V
4 V
3 V
IDS (mA)
Figure 25. Gain vs. IDS and VDS at 900 MHz.
GAIN (dB)
50
22
20
18
16
14
12
10
550150 350 450250
4.5 V
4 V
3 V
ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal P1dB at 4.5 V, 200 mA
7
ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal P1dB at 4.5V, 200 mA
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
Idq (mA)
Figure 26. PAE vs. I
dq
and V
DS
at 2 GHz.
PAE (%)
50
50
40
30
20
10
0
550150 350 450250
4.5 V
4 V
3 V
Idq (mA)
Figure 27. PAE vs. I
dq
and V
DS
at 900 MHz.
PAE (%)
50
70
60
50
40
30
20
10
550150 350 450250
4.5 V
4 V
3 V
FREQUENCY (GHz)
Figure 28. OIP3 vs. Temp and Freq.
OIP3 (dBm)
0.5
45
40
35
30
25
20
41 2 2.51.5 3 3.5
FREQUENCY (GHz)
Figure 29. P1dB vs. Temp and Freq.
P1dB (dBm)
0.5
40
35
30
25
20
15
10
41 2 2.51.5 3 3.5
FREQUENCY (GHz)
Figure 30. Gain vs. Temp and Freq.
GAIN (dB)
0.5
20
15
10
5
0
41 2 2.51.5 3 3.5
FREQUENCY (GHz)
Figure 31. PAE vs. Temp and Freq.
PAE (%)
0.5
70
60
50
40
30
20
10
0
41 2 2.51.5 3 3.5
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
8
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
Figure 32. MSG/MAG & |S21|
2
(dB)
@ 4.5V, 300 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 300 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.94 -134.9 31.16 36.15 111.2 -38.53 0.01 29.7 0.73 -164.5 34.79
0.2 0.93 -157.7 25.64 19.14 99.2 -37.87 0.01 21.8 0.76 -173.7 31.68
0.3 0.93 -166.6 22.26 12.97 94.2 -37.61 0.01 21.1 0.78 -176.8 29.99
0.4 0.93 -171.8 19.78 9.74 90.9 -37.09 0.01 23.4 0.78 -179.9 28.43
0.5 0.92 -173.9 18.70 8.60 88.9 -36.15 0.01 25.4 0.75 178.9 27.31
0.6 0.93 -176.9 17.12 7.18 86.1 -35.80 0.01 27.0 0.75 176.9 26.52
0.7 0.92 -178.8 15.78 6.15 84.3 -35.41 0.01 29.5 0.75 175.5 25.59
0.8 0.93 178.7 14.61 5.37 82.3 -35.11 0.01 32.5 0.76 174.0 24.75
0.9 0.92 177.1 13.58 4.77 80.6 -35.00 0.01 33.1 0.75 172.8 24.24
10.93 175.7 12.64 4.28 79.1 -34.46 0.01 35.0 0.76 171.6 23.53
1.5 0.93 168.7 8.99 2.81 71.4 -32.70 0.02 40.0 0.76 166.0 20.88
20.93 163.0 6.36 2.08 64.2 -31.27 0.02 42.3 0.76 160.6 17.20
2.5 0.92 157.8 4.40 1.66 57.2 -29.90 0.03 42.5 0.76 155.5 14.71
30.92 152.5 2.73 1.36 50.4 -28.59 0.03 41.6 0.75 149.7 12.65
40.92 142.8 0.03 1.00 37.6 -26.69 0.04 35.7 0.74 138.6 9.96
50.91 133.2 -2.17 0.77 24.2 -25.30 0.05 29.8 0.71 127.2 7.23
60.91 124.6 -4.21 0.61 14.1 -24.32 0.06 23.7 0.65 117.2 4.97
70.91 115.7 -5.80 0.51 5.6 -23.48 0.06 19.5 0.59 111.3 3.02
80.91 106.0 -6.82 0.45 -2.6 -22.49 0.07 14.1 0.56 108.2 1.86
90.91 95.5 -7.36 0.42 -10.2 -21.39 0.08 8.5 0.58 103.7 1.19
10 0.90 85.2 -7.98 0.40 -22.2 -20.50 0.09 0.4 0.60 96.0 0.53
11 0.89 74.3 -8.69 0.38 -29.1 -19.72 0.10 -8.4 0.63 87.2 -0.04
12 0.89 63.0 -9.25 0.35 -40.1 -19.42 0.10 -17.1 0.65 77.6 -0.61
13 0.89 54.1 -9.80 0.32 -51.7 -19.12 0.11 -23.9 0.67 68.2 -1.04
14 0.90 46.3 -10.25 0.31 -55.2 -18.65 0.11 -29.7 0.69 58.7 -1.13
15 0.90 40.6 -10.86 0.30 -57.3 -18.57 0.11 -35.8 0.69 50.1 -1.88
16 0.89 33.3 -11.16 0.32 -71.1 -18.02 0.12 -42.3 0.71 41.8 -2.26
17 0.83 25.4 -11.81 0.24 -75.3 -17.65 0.13 -47.1 0.73 35.1 -3.17
18 0.86 20.0 -12.07 0.24 -90.5 -17.43 0.13 -53.1 0.76 27.7 -3.76
9
Figure 33. MSG/MAG & |S21|
2
(dB)
@ 4.5V, 200 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.94 -132.6 31.26 36.54 112.1 -37.40 0.01 27.2 0.70 -161.0 34.49
0.2 0.93 -156.3 25.79 19.47 99.6 -36.68 0.01 19.2 0.74 -171.6 31.13
0.3 0.94 -165.6 22.40 13.18 94.4 -36.47 0.01 19.9 0.76 -175.6 29.44
0.4 0.93 -170.8 19.93 9.92 91.1 -36.17 0.01 19.9 0.76 -178.8 27.93
0.5 0.92 -173.1 18.84 8.75 89.0 -35.11 0.01 24.6 0.73 179.9 26.87
0.6 0.92 -176.2 17.26 7.29 86.2 -34.84 0.01 23.9 0.73 177.8 26.08
0.7 0.92 -178.2 15.92 6.25 84.3 -34.72 0.01 25.6 0.73 176.2 25.41
0.8 0.92 179.4 14.76 5.47 82.3 -34.37 0.01 27.6 0.74 174.7 24.59
0.9 0.93 177.4 13.72 4.85 80.4 -34.02 0.02 28.6 0.74 173.4 23.85
10.92 176.0 12.77 4.34 79.1 -33.71 0.02 30.8 0.74 172.2 23.16
1.5 0.93 168.9 9.13 2.86 70.9 -32.20 0.02 35.0 0.74 166.5 20.59
20.93 163.6 6.49 2.11 63.7 -30.97 0.02 38.2 0.74 161.1 17.50
2.5 0.92 157.9 4.50 1.67 56.8 -29.65 0.03 39.1 0.74 155.9 14.78
30.93 152.6 2.81 1.38 49.3 -28.54 0.03 38.1 0.74 150.2 13.16
40.91 143.1 0.16 1.01 35.8 -26.68 0.04 33.9 0.73 139.0 9.84
50.91 133.7 -2.08 0.78 22.7 -25.40 0.05 28.0 0.70 127.4 7.34
60.91 124.7 -4.02 0.62 12.0 -24.42 0.06 22.3 0.65 117.0 5.01
70.90 115.7 -5.75 0.51 3.3 -23.61 0.06 18.2 0.58 110.2 2.77
80.90 105.6 -6.77 0.45 -3.9 -22.73 0.07 14.4 0.54 107.5 1.56
90.91 95.7 -7.45 0.42 -12.1 -21.60 0.08 8.4 0.55 103.9 1.13
10 0.91 84.9 -7.95 0.40 -22.4 -20.76 0.09 0.9 0.58 97.0 0.82
11 0.89 74.0 -8.29 0.38 -32.0 -19.93 0.10 -8.6 0.61 88.4 -0.05
12 0.89 63.1 -9.19 0.34 -39.5 -19.45 0.10 -16.8 0.64 78.9 -0.82
13 0.89 54.0 -9.74 0.326 -51.1 -19.03 0.11 -24.1 0.67 69.1 -1.38
14 0.90 46.4 -10.17 0.31 -58.1 -18.78 0.11 -30.7 0.68 59.6 -1.33
15 0.90 38.8 -10.85 0.28 -67.8 -18.47 0.11 -36.1 0.68 50.9 -1.80
16 0.91 33.1 -10.77 0.28 -73.7 -18.19 0.12 -42.9 0.71 42.0 -2.11
17 0.85 26.8 -11.05 0.28 -83.3 -17.88 0.12 -47.5 0.73 35.3 -2.60
18 0.87 19.3 -11.53 0.26 -100.4 -17.54 0.13 -53.8 0.75 27.3 -2.83
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
10
Figure 34. MSG/MAG & |S21|
2
(dB)
@ 4.5V, 100 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 100 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.93 -125.4 30.99 35.43 115.3 -34.72 0.01 28.6 0.65 -151.1 32.94
0.2 0.93 -152.1 25.70 19.27 101.4 -33.88 0.02 18.9 0.70 -166.3 29.84
0.3 0.93 -162.8 22.34 13.09 95.5 -33.70 0.02 15.5 0.72 -172.2 27.95
0.4 0.92 -168.7 19.90 9.88 91.8 -33.49 0.02 16.5 0.72 -176.0 26.73
0.5 0.91 -170.8 18.78 8.68 89.5 -32.50 0.02 17.7 0.69 -177.2 25.59
0.6 0.91 -174.4 17.21 7.25 86.6 -32.42 0.02 17.6 0.7 -179.7 24.80
0.7 0.92 -176.8 15.88 6.22 84.4 -32.20 0.02 19.1 0.7 178.3 23.96
0.8 0.92 -179.0 14.72 5.44 82.3 -32.13 0.02 18.8 0.70 176.6 23.38
0.9 0.92 178.7 13.69 4.83 80.4 -32.02 0.02 18.9 0.70 175.2 22.86
10.91 177.0 12.73 4.33 78.8 -31.85 0.02 20.6 0.70 173.8 22.22
1.5 0.92 169.8 9.11 2.85 70.2 -30.95 0.02 24.8 0.70 167.8 20.08
20.91 163.9 6.49 2.11 62.8 -30.00 0.03 27.8 0.71 162.3 18.19
2.5 0.91 158.8 4.52 1.68 55.2 -29.22 0.03 29.0 0.71 157.2 14.84
30.91 153.0 2.89 1.39 47.7 -28.39 0.03 29.0 0.71 151.6 12.76
40.91 143.7 0.20 1.02 33.1 -26.77 0.04 27.2 0.70 140.4 9.92
50.91 134.0 -2.08 0.78 19.2 -25.62 0.05 22.2 0.68 128.7 7.42
60.90 125.0 -4.20 0.61 7.3 -24.73 0.05 17.3 0.64 117.4 4.79
70.90 115.7 -6.04 0.49 -1.6 -23.99 0.06 14.3 0.56 109.1 2.45
80.90 106.4 -7.35 0.42 -7.7 -23.23 0.06 11.2 0.51 106.4 0.71
90.90 96.5 -8.14 0.39 -16.4 -22.04 0.07 7.2 0.51 105.0 0.01
10 0.9 86.1 -8.45 0.37 -25.3 -20.89 0.09 0.5 0.54 99.3 -0.37
11 0.89 75.4 -9.46 0.33 -35.2 -20.08 0.09 -7.5 0.58 90.9 -1.33
12 0.90 63.8 -9.59 0.33 -46.1 -19.41 0.10 -16.7 0.62 81.3 -1.60
13 0.89 54.7 -10.42 0.30 -52.9 -19.02 0.11 -25.1 0.65 71.3 -1.93
14 0.90 46.5 -10.99 0.28 -59.8 -18.87 0.11 -31.7 0.67 61.4 -2.12
15 0.88 40.2 -11.15 0.27 -70.6 -18.71 0.11 -38.2 0.68 52.4 -2.66
16 0.90 33.5 -11.50 0.26 -71.7 -18.22 0.12 -45.5 0.70 43.3 -2.83
17 0.86 26.4 -11.50 0.26 -80.8 -18.28 0.12 -49.0 0.72 35.9 -3.33
18 0.86 19.3 -11.51 0.26 -92.6 -17.88 0.12 -54.8 0.74 27.9 -3.69
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
11
Figure 35. MSG/MAG & |S21|
2
(dB)
@ 4V, 200 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-511P8 Typical Scattering Parameters, VDS = 4V, IDS = 200 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.94 -133.7 30.85 34.87 111.4 -37.28 0.01 28.2 0.73 -162.5 33.96
0.2 0.93 -156.9 25.31 18.41 99.5 -36.61 0.01 20.4 0.76 -172.6 30.89
0.3 0.93 -165.9 21.89 12.43 94.2 -36.19 0.01 20.2 0.78 -176.3 28.90
0.4 0.94 -170.9 19.48 9.42 90.9 -35.98 0.01 20.4 0.78 -179.5 27.70
0.5 0.93 -174.5 17.53 7.52 88.8 -35.84 0.01 23.0 0.78 178.5 26.73
0.6 0.93 -175.8 16.77 6.89 86.0 -34.69 0.01 23.5 0.76 177.3 25.83
0.7 0.93 -178.2 15.53 5.97 84.2 -34.42 0.01 25.0 0.75 175.5 24.98
0.8 0.92 179.7 14.28 5.17 82.5 -34.11 0.02 27.1 0.76 173.9 24.13
0.9 0.92 178.0 13.21 4.57 80.5 -33.77 0.02 29.2 0.76 172.5 23.60
10.93 176.3 12.34 4.13 78.6 -33.66 0.02 29.6 0.76 171.4 22.95
1.5 0.92 169.6 8.63 2.70 71.0 -32.21 0.02 34.5 0.76 165.3 20.34
20.93 164.4 6.12 2.02 63.5 -30.69 0.02 38.0 0.76 159.2 17.32
2.5 0.92 159.6 4.07 1.59 57.0 -29.46 0.03 39.4 0.76 154.1 14.52
30.92 154.2 2.30 1.30 50.3 -28.47 0.03 37.7 0.75 148.6 12.34
40.92 144.9 -0.31 0.96 37.4 -26.48 0.04 33.8 0.73 137.1 9.75
50.91 135.5 -2.55 0.74 25.4 -25.14 0.05 28.4 0.69 127.3 6.74
60.92 126.6 -4.30 0.60 15.1 -24.15 0.06 23.4 0.64 119.4 5.17
70.91 117.1 -5.64 0.52 6.50 -23.20 0.06 18.3 0.62 114.5 3.27
80.91 108.2 -6.81 0.45 -2.8 -22.06 0.07 12.3 0.62 108.5 2.03
90.90 99.1 -7.13 0.44 -13.7 -21.10 0.08 5.2 0.62 100.8 1.60
10 0.92 89.2 -7.76 0.40 -21.2 -20.40 0.09 -2.7 0.64 90.4 1.40
11 0.90 79.6 -8.39 0.38 -30.0 -19.67 0.10 -11.0 0.65 79.3 0.26
12 0.91 70.9 -8.92 0.35 -42.9 -19.28 0.10 -19.9 0.66 67.0 0.15
13 0.90 62.2 -9.42 0.33 -48.9 -19.11 0.11 -27.2 0.67 57.1 -0.69
14 0.94 53.8 -9.84 0.32 -60.1 -18.86 0.11 -33.1 0.68 48.7 -1.20
15 0.87 45.0 -10.51 0.29 -68.5 -18.58 0.11 -38.4 0.7 40.0 -1.56
16 0.89 37.7 -10.74 0.29 -72.4 -18.59 0.11 -43.7 0.71 36.3 -1.97
17 0.89 30.5 -10.03 0.31 -85.1 -17.88 0.12 -48.3 0.73 28.8 -2.50
18 0.88 25.4 -11.77 0.25 -91.8 -17.72 0.13 -59.0 0.74 19.5 -2.82
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
12
ATF-511P8 Typical Scattering Parameters, VDS = 3V, IDS = 200 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.95 -137.1 29.51 29.89 109.9 -36.88 0.01 25.2 0.78 -166.0 33.29
0.2 0.94 -159.0 23.89 15.65 98.7 -36.27 0.01 19.8 0.81 -174.5 30.18
0.3 0.94 -167.3 20.46 10.54 93.8 -36.20 0.01 18.0 0.82 -177.6 28.47
0.4 0.94 -172.0 18.04 7.98 90.7 -35.82 0.01 20.5 0.83 179.4 26.98
0.5 0.93 -175.3 16.10 6.38 88.7 -35.59 0.01 22.4 0.83 177.6 25.75
0.6 0.93 -176.8 15.36 5.86 85.9 -34.34 0.01 24.0 0.81 176.3 24.89
0.7 0.93 -178.7 14.14 5.09 84.2 -34.27 0.01 24.8 0.81 174.6 24.28
0.8 0.93 179.1 12.87 4.4 82.6 -34.12 0.02 27.1 0.81 173.1 23.42
0.9 0.93 177.3 11.82 3.89 80.6 -33.66 0.02 29.1 0.81 171.7 22.69
10.93 176.1 10.91 3.51 78.9 -33.55 0.02 29.3 0.81 170.7 22.23
1.5 0.93 169.4 7.24 2.30 71.8 -31.97 0.02 35.4 0.81 164.6 19.64
20.93 164.0 4.75 1.72 64.7 -30.60 0.03 38.5 0.81 158.5 16.34
2.5 0.93 159.1 2.73 1.36 58.5 -29.39 0.03 38.5 0.81 153.4 14.08
30.92 154.0 0.93 1.11 51.6 -28.15 0.03 37.4 0.80 147.6 11.72
40.93 144.8 -1.58 0.83 38.7 -26.26 0.04 33.1 0.78 135.8 9.24
50.92 135.2 -3.78 0.64 27.3 -24.91 0.05 27.7 0.74 125.0 6.28
60.93 126.0 -5.54 0.52 17.2 -24.05 0.06 22.1 0.68 115.6 4.39
70.91 116.6 -7.07 0.44 10.5 -23.11 0.07 17.2 0.63 110.7 1.96
80.91 107.4 -7.66 0.41 2.06 -22.08 0.07 12.1 0.62 106.3 1.32
90.90 98.4 -8.06 0.39 -5.6 -21.04 0.08 5.0 0.63 99.5 0.60
10 0.92 89.0 -8.99 0.35 -15.9 -20.23 0.09 -2.7 0.64 89.8 0.49
11 0.92 79.5 -9.12 0.35 -25.8 -19.45 0.10 -12.4 0.66 78.7 0.19
12 0.91 70.1 -9.28 0.34 -35.9 -19.08 0.11 -21.4 0.68 66.3 -0.19
13 0.91 61.9 -9.71 0.32 -39.9 -18.93 0.11 -29.2 0.69 56.4 -0.68
14 0.92 51.8 -10.04 0.31 -54.7 -18.89 0.11 -35.6 0.70 47.9 -0.40
15 0.88 44.1 -10.01 0.31 -59.8 -18.63 0.11 -40.7 0.72 39.0 -1.57
16 0.87 36.4 -10.16 0.31 -77.5 -18.83 0.11 -44.7 0.73 35.3 -1.85
17 0.83 30.1 -10.61 0.31 -87.2 -18.17 0.12 -51.2 0.74 27.7 -2.42
18 0.85 24.0 -11.96 0.25 -97.4 -17.69 0.13 -58.3 0.75 18.3 -3.71
Figure 36. MSG/MAG & |S21|
2
(dB)
@ 3V, 200 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
13
2x 2 LPCC (JEDEC DFP-N) Package Dimensions
Ordering Information
Part Number No. of Devices Container
ATF-511P8-TR1 3000 7” Reel
ATF-511P8-TR2 10000 13”Reel
ATF-511P8-BLK 100 antistatic bag
Device Models
Refer to Agilent’s Web Site
www.agilent.com/view/rf
D
E
8
7
6
5
A
D1
E1
P
e
pin1
R
Lb
DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS
MIN.
0.70
0
0.203 REF
0.225
1.9
0.65
1.9
1.45
0.50 BSC
0.20
0.35
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
0.25
0.40
MAX.
0.80
0.05
0.203 REF
0.275
2.1
0.95
2.1
1.75
0.50 BSC
0.30
0.45
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
P
L
1
pin1
2
3
4
1PX
Top View
End View
Side View
Bottom View
A2
AA1
14
Device Orientation
PCB Land Pattern and Stencil Design
2.80 (110.24)
0.70 (27.56)
0.25 (9.84)
0.25 (9.84)
0.50 (19.68)
0.28 (10.83)
0.60 (23.62)
φ0.20 (7.87)
PIN 1
Solder
mask
RF
transmission
line 0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
1.60 (62.99)
+
2.72 (107.09)
0.63 (24.80)
0.22 (8.86)
0.32 (12.79)
0.50 (19.68)
0.25 (9.74)
0.63 (24.80)
Stencil Layout (top view)
PCB Land Pattern (top view)
Notes:
Typical stencil thickness is 5 mils.
Measurements are in millimeters (mils).
0.72 (28.35)
PIN 1
1.54 (60.61)
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
8 mm
4 mm
1PX1PX1PX1PX
15
Tape Dimensions
D
E
8
7
6
5
A
D1
E1
P
e
pin1
R
Lb
DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS
MIN.
0.70
0
0.203 REF
0.225
1.9
0.65
1.9
1.45
0.50 BSC
0.20
0.35
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
0.25
0.40
MAX.
0.80
0.05
0.203 REF
0.275
2.1
0.95
2.1
1.75
0.50 BSC
0.30
0.45
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
P
L
1
pin1
2
3
4
1PX
Top View
End View
Side View
Bottom View
A2
AA1
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
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Korea: (+65) 6271 2194
Malaysia, Singapore: (+65) 6271 2054
Taiwan: (+65) 6271 2654
Data subject to change.
Copyright © 2003 Agilent Technologies, Inc.
Obsoletes 5988-8246EN (12/02)
August 5, 2003
5989-0003EN
