© 2017 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C -100 V
VDGR TJ= 25C to 150C, RGS = 1M-100 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C -100 A
IDM TC= 25C, Pulse Width Limited by TJM - 510 A
IATC= 25C -170 A
EAS TC= 25C 3.5 J
dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns
PDTC= 25C 312 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
VISOL 50/60 HZ ,RMS, t= 1min 2500 V~
MdMounting Force 20..120/4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250A -100 V
VGS(th) VDS = VGS, ID = -1mA - 2.0 - 4.0 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V - 50A
TJ = 125C - 250A
RDS(on) VGS = -10V, ID = - 85A, Note 1 15.4 m
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR170P10P VDSS = -100V
ID25 = -100A
RDS(on)
15.4m
DS99976C(5/17)
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
Dynamic dv/dt Rating
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Diode
The Rugged PolarPTM Process
Low QG
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
DIsolated Tab
IXTR170P10P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = - 85A, Note 1 35 58 S
Ciss 12.6 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 4190 pF
Crss 930 pF
td(on) 32 ns
tr 75 ns
td(off) 82 ns
tf 45 ns
Qg(on) 240 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = - 85A 45 nC
Qgd 120 nC
RthJC 0.40C/W
RthCS 0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V -170 A
ISM Repetitive, Pulse Width Limited by TJM - 680 A
VSD IF = - 85A, VGS = 0V, Note 1 - 3.3 V
trr 176 ns
QRM 1.25 C
IRM -14.2 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = - 85A
RG = 1 (External)
IF = - 85A, -di/dt = -100A/s
VR = - 50V, VGS = 0V
ISOPLUS247 (IXTR) Outline
1 - Gate
2,4 - Drain
3 - Source
© 2017 IXYS CORPORATION, All Rights Reserved
IXTR170P10P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-2.4-2.0-1.6-1.2-0.8-0.40.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -15V
-10V
- 9V
- 5V
- 6V
- 8V
- 7V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
-300
-270
-240
-210
-180
-150
-120
-90
-60
-30
0
-11-10-9-8-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -15V
-10V
- 8V
- 6V
- 7V
- 9V
- 5V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -15V
-10V
- 9V
- 6V
- 5V
- 7V
- 8V
Fig. 4. R
DS(on)
Normalized to I
D
= - 85A Value vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= -170A
I
D
= - 85A
Fig. 5. R
DS(on)
Normalized to I
D
= - 85A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-280-240-200-160-120-80-400
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
-15V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 6. Maximum Drain Current vs.
Case Temperature
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTR170P10P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-160
-140
-120
-100
-80
-60
-40
-20
0
-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
-160-140-120-100-80-60-40-200
I
D
- Amperes
g
f s - Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-300
-270
-240
-210
-180
-150
-120
-90
-60
-30
0
-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 40 80 120 160 200 240
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 50V
I
D
= - 85A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarad
s
f = 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
25μs
1ms
100μs
R
DS(on)
Limit 10ms
DC
-
-
-- -
100ms
-
-
© 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170P10P(B9)3-25-09-C
IXTR170P10P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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