IXTR170P10P PolarPTM Power MOSFET VDSS ID25 RDS(on) = = -100V -100A 15.4m P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -100 V VDGR TJ = 25C to 150C, RGS = 1M -100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C -100 A IDM TC = 25C, Pulse Width Limited by TJM - 510 A IA TC = 25C -170 A EAS TC = 25C 3.5 J dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 312 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 V~ 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 HZ ,RMS, t= 1min Md Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation Dynamic dv/dt Rating High Current Handling Capability Avalanche Rated Fast Intrinsic Diode The Rugged PolarPTM Process Low QG Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = -1mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Characteristic Values Min. Typ. Max. -100 - 2.0 V - 4.0 V 100 nA TJ = 125C VGS = -10V, ID = - 85A, Note 1 (c) 2017 IXYS CORPORATION, All Rights Reserved - 50 A - 250 A 15.4 m Easy to Mount Space Savings High Power Density Applications High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99976C(5/17) IXTR170P10P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = - 85A, Note 1 35 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = - 85A RG = 1 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 * VDSS, ID = - 85A Qgd ISOPLUS247 (IXTR) Outline 58 S 12.6 nF 4190 pF 930 pF 32 ns 75 ns 82 ns 45 ns 240 nC 45 nC 120 nC RthJC 1 - Gate 2,4 - Drain 3 - Source 0.40C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. -170 A Repetitive, Pulse Width Limited by TJM - 680 A VSD IF = - 85A, VGS = 0V, Note 1 - 3.3 V trr IF = - 85A, -di/dt = -100A/s QRM IRM VR = - 50V, VGS = 0V 176 ns 1.25 C -14.2 A Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR170P10P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C -180 -300 VGS = -15V -10V - 9V -160 -140 - 9V -240 - 8V -210 -100 I D - Amperes -120 I D - Amperes VGS = -15V -10V -270 - 7V -80 - 6V -60 - 8V -180 -150 - 7V -120 -90 -40 - 6V -60 - 5V -20 -30 0 - 5V 0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 -1 -2 -3 -4 2.2 -180 VGS = -15V -10V - 9V -7 -8 -9 -10 -11 VGS = -10V 2.0 1.8 -120 RDS(on) - Normalized -140 I D - Amperes -6 Fig. 4. RDS(on) Normalized to ID = - 85A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C -160 -5 VDS - Volts VDS - Volts - 8V -100 - 7V -80 -60 - 6V -40 I D = -170A 1.6 1.4 I D = - 85A 1.2 1.0 0.8 -20 0.6 - 5V 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0.4 -3.5 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 85A Value vs. Drain Current 2.0 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -110 -90 o TJ = 125 C -80 1.6 I D - Amperes RDS(on) - Normalized 50 -100 VGS = -10V -15V 1.8 25 TJ - Degrees Centigrade 1.4 1.2 -70 -60 -50 -40 -30 o TJ = 25 C 1.0 -20 -10 0 0.8 0 -40 -80 -120 -160 I D - Amperes (c) 2017 IXYS CORPORATION, All Rights Reserved -200 -240 -280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTR170P10P Fig. 8. Transconductance Fig. 7. Input Admittance 100 -160 -140 -120 25 C o 125 C o 80 o 70 g f s - Siemens I D - Amperes o TJ = - 40 C 90 o TJ = - 40 C -100 -80 -60 25 C 60 o 125 C 50 40 30 -40 20 -20 10 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -270 -9 -240 -8 -210 -7 -180 -6 -150 o TJ = 125 C -90 -140 -160 VDS = - 50V I D = - 85A I G = -1mA -5 -4 -60 -2 -30 -1 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 40 80 VSD - Volts 120 160 200 240 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 - 1,000 100s f = 1 MHz 25s 1ms RDS(on) Limit Ciss 10ms 100ms 10,000 - 100 I D - Amperes Capacitance - PicoFarads -120 -3 o TJ = 25 C 0 -0.5 -100 Fig. 10. Gate Charge -10 VGS - Volts I S - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode -300 -120 -80 I D - Amperes Coss 1,000 DC - 10 o TJ = 150 C Crss o TC = 25 C Single Pulse -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 VDS - Volts 100 - IXTR170P10P Fig. 13. Maximum Transient Thermal Impedance Z (th )JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170P10P(B9)3-25-09-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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