MRF6V2010N MRF6V2010NB MRF6V2010GN
1
RF Device Data
NXP Semiconductors
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW performance at 220 MHz: VDD =50Vdc,I
DQ =30mA,
Pout =10W
Power gain — 23.9 dB
Drain efficiency — 62%
Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
output power
Features
Characterized with series equivalent large--signal impedance parameters
Qualified up to a maximum of 50 VDD operation
Integrated ESD protection
225C capable plastic package
Document Number: MRF6V2010N
Rev. 6, 9/2016
NXP Semiconductors
Technical Data
10--450 MHz, 10 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6V2010N
MRF6V2010NB
MRF6V2010GN
T O -- 2 7 0 -- 2
PLASTIC
MRF6V2010N
TO--270G--2
PLASTIC
MRF6V2010GN
Figure 1. Pin Connections
(Top View)
Drain
Gate
Note: Exposed backside of the package is
the source terminal for the transistor.
21
T O -- 2 7 2 -- 2
PLASTIC
MRF6V2010NB
2007–2008, 2010, 2016 NXP B.V.
2
RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +110 Vdc
Gate--Source Voltage VGS --0.5, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1,2) TJ225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 81C, 10 W CW RJC 3.0 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 10 Adc
Drain--Source Breakdown Voltage
(ID=5mA,V
GS =0Vdc)
V(BR)DSS 110 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 50 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 2.5 mA
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=28Adc)
VGS(th) 11.68 3Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
D= 30 mAdc, Measured in Functional Test)
VGS(Q) 1.5 2.68 3.5 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=70mAdc)
VDS(on) —0.26 —Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —0.13 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —7.3 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —16.3 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
MRF6V2010N MRF6V2010NB MRF6V2010GN
3
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In NXP Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ =30mA,P
out =10W,f=220MHz,CW
Power Gain Gps 22.5 23.9 25.5 dB
Drain Efficiency D58 62 — %
Input Return Loss IRL —-- 1 4 -- 9 dB
Table 6. Ordering Information
Device Tape and Reel Information Package
MRF6V2010NR1 R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel T O -- 2 7 0 -- 2
MRF6V2010NBR1 R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel T O -- 2 7 2 -- 2
MRF6V2010GNR1 R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel TO--270G--2
ATTENTION: The MRF6V2010N, MRF6V2010NB and MRF6V2010GN are high power devices and special
considerations must be followed in board design and mounting. Incorrect mounting can lead to internal
temperatures which exceed the maximum allowable operating junction temperature. Refer to NXP Application
Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING
SYSTEM DESIGN to ensure proper mounting of these devices.
4
RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
Figure 2. MRF6V2010N(NB) Test Circuit Schematic
Z7 0.062x 0.270Microstrip
Z8 0.198x 0.082Microstrip
Z9 5.600x 0.082Microstrip
Z10 0.442x 0.082Microstrip
Z11 0.341x 0.082Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030,r=2.55
Z1 0.235x 0.082Microstrip
Z2 1.190x 0.082Microstrip
Z3 0.619x 0.082Microstrip
Z4 0.190x 0.270Microstrip
Z5 0.293x 0.270Microstrip
Z6 0.120x 0.270Microstrip
Z1
RF
INPUT
C1
Z2 Z3 Z4
DUT
Z7
C18
RF
OUTPUT
Z10
C5
B1
VBIAS
VSUPPLY
C3
+
C4C2
+C12 C13C11 C16
+
C7C6
Z5 Z11Z6
B2
R1 L1
L3
C8
C14 C15
C9 C10
Z8 Z9
L2
C17
Table 7. MRF6V2010N(NB) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 95 , 100 MHz Long Ferrite Beads 2743021447 Fair--Rite
C1, C8, C11, C18 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C2 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet
C3 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C4, C13 39 K pF Chip Capacitors ATC200B393KT50XT ATC
C5, C14 22 K pF Chip Capacitors ATC200B223KT50XT ATC
C6, C15 0.1 F Chip Capacitors CDR33BX104AKYS Kemet
C7, C12 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C9 0.6--4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson
C10 12 pF Chip Capacitor ATC100B120JT500XT ATC
C16 470 F, 63 V Electrolytic Capacitor ESMG630ELL471MK205 United Chemi--Con
C17 27 pF Chip Capacitor ATC100B270JT500XT ATC
L1 17.5 nH Inductor B06T CoilCraft
L2, L3 82 nH Inductors 1812SMS--82NJ CoilCraft
R1 120 , 1/4 W Chip Resistor CRCW1206120RFKEA Vishay
MRF6V2010N MRF6V2010NB MRF6V2010GN
5
RF Device Data
NXP Semiconductors
Figure 3. MRF6V2010N(NB) Test Circuit Component Layout
MRF6V2010N/NB
CUT OUT AREA
Rev. 3
C4
C5
C6
B1
C2 C3
C1
R1
L1
C7
C8
C13
C14
C15
L2
C12
C11
C9
C10
L3 C17 C18
B2
C16
6
RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
TYPICAL CHARACTERISTICS
50
0.1
100
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
0.1
100
1
TC=25C
10
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
ID, DRAIN CURRENT (AMPS)
40
0.35
0
DRAIN VOLTAGE (VOLTS)
20 120
Figure 6. DC Drain Current versus Drain Voltage
ID, DRAIN CURRENT (AMPS)
60
18
25
IDQ =45mA
0.1
23
22
21
Pout, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
Gps, POWER GAIN (dB)
VDD =50Vdc
f1 = 220 MHz
10
1
40 100
24
VGS =3V
Coss
Crss
80 100
2.75 V
2.63 V
2.5 V
2.25 V
20
10
38 mA
-- 5 5
-- 2 0
1
Pout, OUTPUT POWER (WATTS) PEP
-- 2 5
-- 3 0
-- 3 5
-- 4 0
10 20
Figure 8. Third Order Intermodulation Distortion
versus Output Power
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
VDD =50Vdc
f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements
100 kHz Tone Spacing
-- 4 5
-- 5 0
23
37
47
13 1715
45
43
41
39
Pin, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
Pout, OUTPUT POWER (dBm)
19 21
P3dB = 40.87 dBm (12.2 W)
Actual
Ideal
P1dB = 40.43 dBm (11.04 W)
VDD =50Vdc,I
DQ =30mA
f = 220 MHz
1
200
0.3
0.25
0.2
0.15
0.1
0.05
0
120
19
30 mA
23 mA
15 mA
IDQ =45mA
38 mA
IDQ =60mA
15 mA
23 mA
38 mA 45 mA
30 mA
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
MRF6V2010N MRF6V2010NB MRF6V2010GN
7
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS
Figure 10. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps, POWER GAIN (dB)
VDD =20V
25 V
14
10
26
082
18
16
46
24
22
IDQ =30mA
f = 220 MHz
30 V
35 V
40 V
50 V
20
10 12
45 V
14
12
25
20
45
0
25_C
TC=--30_C
85_C
155
35
30
25
Pin, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
Pout, OUTPUT POWER (dBm)
VDD =50Vdc
IDQ =30mA
f = 220 MHz
10 20
40
18
26
0.1
0
72
1
25
23
21
63
54
45
36
27
18
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency versus CW Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
24
22
20
10 20
25_C
TC=--30_C
85_C
85_C
Gps
VDD =50Vdc
IDQ =30mA
f = 220 MHz
25_C
-- 3 0 _C
19 9
19
27
0
0
80
2
25
23
21
60
50
40
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 13. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
24
22
20
10 12
Gps @64MHz
10
250
108
90
TJ, JUNCTION TEMPERATURE (C)
Figure 14. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50Vdc,P
out = 10 W CW, and D= 62%.
MTTF calculator available at http://www.nxp.com/RF/calculators.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
26 70
468
D@450 MHz
Gps @ 450 MHz
D@220 MHz
D@64 MHz
D@130 MHz
Gps @ 130 MHz
Gps @ 220 MHz
VDD =50Vdc
IDQ =30mA
8
RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
Zo=50
Zload
f = 220 MHz
f = 220 MHz
Zsource
VDD =50Vdc,I
DQ =30mA,P
out =10WCW
f
MHz
Zsource
Zload
220 20 + j25 75 + j44
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 15. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF6V2010N MRF6V2010NB MRF6V2010GN
9
RF Device Data
NXP Semiconductors
Figure 16. MRF6V2010N(NB) Test Circuit Component Layout — 130 MHz
130 MHz
CUT OUT AREA
Rev. 1
C10 C9 C8
C7
C6
B1
C1
L1
C5
R1
C2 C3
C4
C14
C15
C16
B2
C17
L5
C13
C12
C11
L2 L3
C18
L4 C19
Table 8. MRF6V2010N(NB) Test Circuit Component Designations and Values — 130 MHz
Part Description Part Number Manufacturer
B1, B2 95 , 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair--Rite
C1, C5, C18, C19 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C2, C12 0.6--4.5 pF Variable Capacitors, Gigatrim 27271SL Johanson
C3 27 pF Chip Capacitor ATC100B270JT500XT ATC
C4, C13 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C6, C14 0.1 F, 50 V Chip Capacitors CDR33BX104AKYM Kemet
C7, C15 22K pF Chip Capacitors ATC200B223KT50XT ATC
C8, C16 39K pF Chip Capacitors ATC200B393KT50XT ATC
C9 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C10 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet
C11 16 pF Chip Capacitor ATC100B160JT500XT ATC
C17 330 F, 63 V Electrolytic Capacitor MCRH63V337M13X21--RH Multicomp
L1 17.5 nH Inductor B06T CoilCraft
L2, L5 82 nH Inductors 1812SMS--82NJ CoilCraft
L3 35.5 nH Inductor B09T CoilCraft
L4 43 nH Inductor B10T CoilCraft
R1 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay
PCB PCB Material 0.030” CuClad 250GX--0300--55--22,
0.030,r=2.55
Arlon
10
RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
Figure 17. MRF6V2010N(NB) Test Circuit Component Layout — 450 MHz
450 MHz
CUT OUT AREA
Rev. 1
C10 C9 C8
C7
C6
B1
C1
L1 C5
R1
C4
C16
C17
C18
B2
C19
L4
C11
L2 L3 C12 C15
C20
C2
C3 C13
C14
Table 9. MRF6V2010N(NB) Test Circuit Component Designations and Values — 450 MHz
Part Description Part Number Manufacturer
B1, B2 95 , 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair--Rite
C1, C5, C12, C15 240 pF Chip Capacitors ATC100B241JT200XT ATC
C2, C3 10 pF Chip Capacitors ATC100B100JT500XT ATC
C4, C11 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C6, C16 0.1 uF 50V Chip Capacitors CDR33BX104AKYM Kemet
C7, C17 22K pF Chip Capacitors ATC200B223KT50XT ATC
C8, C18 39K pF Chip Capacitors ATC200B393KT50XT ATC
C9 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C10 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet
C13, C14 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC
C19 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp
C20 47 F, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap
L1 17.5 nH Inductor B06T CoilCraft
L2, L4 82 nH Inductors 1812SMS--82NJ CoilCraft
L3 5.0 nH Inductor A02T CoilCraft
R1 120 , 1/4 W Chip Resistor CRCW1206120RFKEA Vishay
PCB PCB Material 0.030” CuClad 250GX--0300--55--22,
0.030,r=2.55
Arlon
MRF6V2010N MRF6V2010NB MRF6V2010GN
11
RF Device Data
NXP Semiconductors
Figure 18. MRF6V2010N(NB) Test Circuit Component Layout — 64 MHz
64 MHz
CUT OUT AREA
Rev. 1
C11 C10 C9
C8
C7
B1
L1
C1
L2
C5
C6
R1 C2 C3
C4
C18
C19
C20
B2
C21
L6
C16
C12 C13
L3 L4
C17
L5 C15
C14
Table 10. MRF6V2010N(NB) Test Circuit Component Designations and Values — 64 MHz
Part Description Part Number Manufacturer
B1, B2 95 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair--Rite
C1, C5, C15, C17 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C2 91 pF Chip Capacitor ATC100B910JT500XT ATC
C3, C14 22 pF Chip Capacitors ATC100B220JT500XT ATC
C4, C16 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C6 220 nF, 50 V Chip Capacitor C1812C224J5RAC Kemet
C7, C18 0.1 F, 50 V Chip Capacitors CDR33BX104AKYM Kemet
C8, C19 100K pF Chip Capacitors ATC200B104KT50XT ATC
C9, C20 22K pF Chip Capacitors ATC200B223KT50XT ATC
C10 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C11 10 F, 35 V Tantalum Capacitor T491D106K035AT Kemet
C12 68 pF Chip Capacitor ATC100B680JT500XT ATC
C13 27 pF Chip Capacitor ATC100B270JT500XT ATC
C21 330 F, 63 V Electrolytic Capacitor MCRH63V337M13X21--RH Multicomp
L1 17.5 nH Inductor B06T CoilCraft
L2 43 nH Inductor B10T CoilCraft
L3, L4, L5, L6 82 nH Inductors 1812SMS--82NJ CoilCraft
R1 180 , 1/4 W Chip Resistor CRCW1206180RFKEA Vishay
PCB PCB Material 0.030CuClad 250GX--0300--55--22,
0.030,r=2.55
Arlon
12
RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
f = 450 MHz Zsource
Zo=50
f = 220 MHz Zsource
f = 130 MHz Zsource
f=64MHzZ
load
f=64MHzZ
source f = 130 MHz Zload
f = 220 MHz Zload
f = 450 MHz Zload
VDD =50Vdc,I
DQ =30mA,P
out =10WCW
f
MHz
Zsource
Zload
64 37.5 + j15.1 94.5 + j16.7
130 26.7 + j21.3 83.8 + j35.0
220 20.0 + j25.4 75.0 + j44.0
450 7.70 + j21.0 43.0 + j49.0
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 19. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF6V2010N MRF6V2010NB MRF6V2010GN
13
RF Device Data
NXP Semiconductors
50 OHM TYPICAL CHARACTERISTICS
Table 11. Common Source S--Parameters (VDD =50V,I
DQ =30mA,T
A=25C, 50 Ohm System)
f
MHz
S11 S21 S12 S22
|S11| |S21| |S12| |S22|
10 0.997 -- 5 . 0 11.520 175.6 0.000790 84.6 0.960 -- 0 . 8
20 0.994 -- 9 . 5 11.419 171.6 0.00157 84.3 0.962 -- 3 . 5
30 0.992 --14.5 11.356 167.9 0.00232 78.1 0.963 -- 5 . 5
40 0.987 --19.3 11.278 164.1 0.00307 74.6 0.964 -- 7 . 7
50 0.981 --24.0 11.187 160.1 0.00380 71.0 0.964 -- 9 . 9
60 0.974 --28.6 11.042 156.1 0.00449 67.4 0.963 --12.1
70 0.965 --33.0 10.848 152.1 0.00513 63.8 0.961 --14.2
80 0.955 --37.4 10.636 148.2 0.00574 60.4 0.958 --16.3
90 0.944 --41.6 10.405 144.5 0.00631 57.0 0.955 --18.4
100 0.933 --45.7 10.147 140.8 0.00683 53.8 0.951 --20.4
120 0.912 --53.3 9.603 134.2 0.00776 47.9 0.944 --24.2
140 0.892 --60.4 9.061 127.9 0.00851 42.4 0.936 --27.9
160 0.873 --66.7 8.516 122.2 0.00914 37.6 0.929 --31.3
180 0.856 --72.7 7.993 116.9 0.00967 32.9 0.923 --34.6
200 0.841 --78.1 7.497 112.1 0.0101 28.7 0.918 --37.9
220 0.828 --83.0 7.040 107.5 0.0104 24.9 0.914 --41.1
240 0.819 --87.5 6.612 103.3 0.0107 21.3 0.912 --44.2
260 0.810 --91.7 6.214 99.3 0.0109 18.0 0.909 --47.2
280 0.804 --95.5 5.845 95.7 0.0110 15.0 0.908 --50.2
300 0.799 --99.0 5.507 92.2 0.0112 11.9 0.907 --53.0
320 0.796 --102.2 5.192 88.8 0.0112 9.1 0.906 --55.9
340 0.794 --105.1 4.901 85.7 0.0113 6.5 0.906 --58.6
360 0.793 --107.8 4.630 82.8 0.0112 4.1 0.906 --61.4
380 0.793 --110.4 4.382 79.9 0.0112 2.0 0.906 --64.1
400 0.794 --112.7 4.152 77.2 0.0112 -- 0 . 3 0.906 --66.7
420 0.796 --114.9 3.937 74.6 0.0112 -- 2 . 5 0.907 --69.3
440 0.798 --116.9 3.733 72.2 0.0111 -- 4 . 4 0.907 --71.8
460 0.800 --118.8 3.547 69.8 0.0110 -- 6 . 5 0.908 --74.2
480 0.803 --120.5 3.372 67.6 0.0109 -- 8 . 5 0.908 --76.7
500 0.807 --122.2 3.213 65.4 0.0108 --10.0 0.909 --79.0
520 0.810 --123.8 3.061 63.3 0.0107 -- 11 . 9 0.910 --81.3
540 0.814 --125.4 2.919 61.2 0.0105 --13.5 0.911 --83.6
560 0.817 --126.8 2.784 59.3 0.0104 --14.9 0.912 --85.8
580 0.821 --128.1 2.661 57.5 0.0103 --16.6 0.914 --87.9
600 0.825 --129.3 2.545 55.7 0.0101 --18.1 0.915 --90.0
620 0.829 --130.5 2.436 53.9 0.00996 --19.6 0.917 --92.1
640 0.833 --131.6 2.334 52.2 0.00981 --21.0 0.918 --94.1
660 0.837 --132.7 2.237 50.5 0.00963 --22.4 0.920 --96.0
680 0.840 --133.8 2.144 48.9 0.00946 --23.7 0.921 --97.9
700 0.843 --134.8 2.058 47.3 0.00928 --25.0 0.923 --99.7
720 0.847 --135.8 1.977 45.8 0.00910 --26.1 0.924 --101.4
740 0.850 --136.8 1.900 44.4 0.00894 --27.3 0.926 --103.0
760 0.854 --137.8 1.828 43.0 0.00876 --28.6 0.928 --104.7
780 0.857 --138.7 1.760 41.6 0.00859 --29.7 0.930 --106.2
(continued)
14
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50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S--Parameters (VDD =50V,I
DQ =30mA,T
A=25C, 50 Ohm System) (continued)
f
MHz
S11 S21 S12 S22
|S11| |S21| |S12| |S22|
800 0.858 --139.7 1.697 40.2 0.00839 --31.1 0.932 --107.6
820 0.861 --140.7 1.636 38.9 0.00818 --32.1 0.934 --109.0
840 0.864 --141.6 1.578 37.6 0.00798 --33.1 0.935 --110.4
860 0.867 --142.6 1.523 36.4 0.00781 --33.8 0.936 -- 11 1 . 7
880 0.870 --143.5 1.471 35.1 0.00763 --34.8 0.938 --112.9
900 0.873 --144.5 1.421 33.9 0.00745 --35.9 0.939 --114.1
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Feb. 2007 Initial release of data sheet
1May 2007 Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1,
C8, C11, C18, C4, C13, C5, and C14, p. 3
Corrected Series Impedance Zsource and Zload values, Fig. 13, Series Equivalent Source and Load
Impedance, p. 7
2Aug. 2007 Replaced Case Outline 1265--08 with 1265--09, Issue K, p. 1, 12--14. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min--Max .290--.320 to .290 Min; E3 changed from Min--Max .150--.180 to .150 Min). Added JEDEC
Standard Package Number.
Replaced Case Outline 1337--03 with 1337--04, p. 1, 15--17. Issue D: Removed Drain--ID label from View
Y--Y on Sheet 2. Renamed E2 to E3. Added cross--hatch region dimensions D2 and E2.
Corrected Test Circuit Component part number in Table 6, Component Designations and Values for R1, p. 3
Added Figure 12, Power Gain and Drain Efficiency versus CW Output Power, p. 6
Corrected plot points to show 50 Ohms in Figure 14, Series Equivalent Source and Load Impedance, p. 7
Added Figures 15--17, Test Circuit Component Layout and Tables 7--9, Test Circuit Component
Designations and Values to show 130, 450 and 64 MHz, respectively, p. 8--10
Added Figure 18, Series Equivalent Source and Load Impedance to show 64, 130, 220 and 450 MHz plot
points, p. 11
3Feb. 2008 Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1
Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
Replaced Case Outline 1337--04, Issue D, with 1337--04, Issue E, p. 15--17. Corrected document number
98ASA99191D on Sheet 3.
4Mar. 2008 Corrected Zsource (37.5 + j15.1) and Zload (94.5 + j16.7) 64 MHz values and replotted both, p. 11
Added S--Parameter table, p. 12, 13
(continued)
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REVISION HISTORY (continued)
Revision Date Description
5Apr. 2010 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200C to 225C
in Capable Plastic Package bullet, p. 1
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 20
6Sept. 2016 Added part number MRF6V2010GN, pp. 1, 3
Added TO--270G--2 package isometric, p. 1, and Mechanical Outline, pp. 21--23
Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
Fig. 14, MTTF versus Junction Temperature: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7
Replaced Case Outline TO--270--2, Issue K (Case 1265--09), with TO--270--2, Issue R, pp. 15--17.
Issue P: changed dimension A to AA and D to DD on Sheets 1 and 3. Added tolerance bbb and feature
control frame to dimensions E and E5. Issue R: incorporated NXP logo.
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How to Reach Us:
Home Page:
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Web Support:
nxp.com/support
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
NXP makes no warranty, representation, or guarantee regarding the suitability of its
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application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
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E2007–2008, 2010, 2016 NXP B.V.
Document Number: MRF6V2010N
Rev. 6, 9/2016
